Tech Center 4100 • Art Units: 1713 1714 1718 1759 2893 3652 4100
This examiner grants 59% of resolved cases
Charlee Bennett serves as an examiner in Tech Center 4100, specifically within Art Unit 1713. The examiner has a record of 568 resolved cases, offering a statistical foundation for analysis. The allowance rate is 58.6 percent, which provides a baseline for the probability of a successful grant. This 58.6 percent rate indicates the frequency of allowances for applicants navigating this examiner's requirements. The 568 resolved cases establish a clear pattern of performance.
The interview lift for this examiner is 34.9 percent, suggesting that formal discussions are an effective tool for advancing prosecution. This 34.9 percent lift indicates that an interview can improve the chances of allowance compared to the 58.6 percent baseline. Practitioners should consider this positive impact when deciding how to respond to office actions. The median days to allowance is 1353, which is the typical duration for applications that reach issuance. This 1353 median days to allowance helps set expectations for the overall timeline.
The data in Art Unit 1713 shows that the interview lift is 34.9 percent, offering a clear path for applicants. The 1353 median days to allowance provides a benchmark for pendency in Tech Center 4100. The 58.6 percent allowance rate remains a key metric for evaluating the likelihood of a grant. These data points allow for a more informed strategy when prosecuting applications before this examiner.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18910685 | PLASMA GENERATION CIRCUIT AND SUBSTRATE PROCESSING DEVICE INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18495224 | WAFER PROCESSING APPARATUS | Final Rejection | Samsung Electronics Co., Ltd. |
| 18383211 | PROCESS CHAMBER, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND OPERATING METHOD OF THE SUBSTRATE TREATING APPARATUS | Final Rejection | Samsung Electronics Co., Ltd. |
| 18526132 | APPARATUS AND METHOD FOR MANUFACTURING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 18631858 | SEMICONDUCTOR PROCESSING DEVICE WITH EDGE PURGING | Non-Final OA | ASM IP Holding B.V. |
| 18377885 | GAS INLET TUBE ASSEMBLY FOR AN IMPROVED GAS MIXTURE IN A SUBSTRATE PROCESSING APPARATUS | Final Rejection | ASM IP Holding B.V. |
| 18690502 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD | Non-Final OA | Hitachi High-Tech Corporation |
| 18279755 | PLASMA PROCESSING APPARATUS AND HEATING APPARATUS | Final Rejection | Hitachi High-Tech Corporation |
| 18767915 | RF POWER COMPENSATION TO REDUCE DEPOSITION OR ETCH RATE CHANGES IN RESPONSE TO SUBSTRATE BULK RESISTIVITY VARIATIONS | Final Rejection | Lam Research Corporation |
| 18654271 | SUBSTRATE SUPPORT WITH IMPROVED PROCESS UNIFORMITY | Non-Final OA | Lam Research Corporation |
| 18693940 | A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA | Non-Final OA | Lam Research Corporation |
| 18782651 | METHODS OF SUBSTRATE PROCESSING AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18823303 | WAFER EDGE RING LIFTING SOLUTION | Non-Final OA | Applied Materials, Inc. |
| 18765826 | METROLOGY SLOT PLATES | Non-Final OA | APPLIED MATERIALS, INC. |
| 18620411 | GROUNDING PLATE FOR STRESS TUNING HIGH DENSITY AND MODULUS FILMS | Non-Final OA | Applied Materials, Inc. |
| 18595231 | LID AND HYDBRID SUBSTRATE SUPPORT FOR EFFICIENT HEATING AND COOLING IN PROCESS CHAMBERS | Non-Final OA | Applied Materials, Inc. |
| 18440573 | MULTI-ZONE PROFILE CONTROL FOR INCONSISTENT UNDERLAYER | Non-Final OA | Applied Materials, Inc. |
| 18401112 | REAL-TIME MEASUREMENT OF MICROWAVE RESONATORS AS PLASMA DIAGNOSTICS FOR PROCESS MONITORING | Non-Final OA | Applied Materials, Inc. |
| 18379915 | SHOWERHEAD DESIGN FOR PLASMA-ENHANCED DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18483965 | COMPACT DYNAMIC LEVELING LIFT MECHANISM | Non-Final OA | Applied Materials, Inc. |
| 18467211 | PLASMA PROCESSING CHAMBER LID COOLING | Final Rejection | Applied Materials, Inc. |
| 18323941 | DYNAMIC INTERFACE FOR PROVIDING A SYMMETRIC RADIO FREQUENCY RETURN PATH | Non-Final OA | Applied Materials, Inc. |
| 18131534 | ADVANCED METHOD FOR CREATING ELECTROSTATIC CHUCK (ESC) MESA PATTERNS | Non-Final OA | Applied Materials, Inc. |
| 18108407 | OVERLAPPING SUBSTRATE SUPPORTS AND PRE-HEAT RINGS, AND RELATED PROCESS KITS, PROCESSING CHAMBERS, METHODS, AND COMPONENTS | Final Rejection | Applied Materials, Inc. |
| 18083372 | FAST GAS SWITCHING | Non-Final OA | Applied Materials, Inc. |
| 18076234 | THERMAL CHOKE PLATE | Final Rejection | Applied Materials, Inc. |
| 17970451 | PLASMA PROCESSING CHAMBERS CONFIGURED FOR TUNABLE SUBSTRATE AND EDGE SHEATH CONTROL | Non-Final OA | Applied Materials, Inc. |
| 18935537 | PLASMA PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18179503 | Ceramic Pedestal Shaft with Heated/Cooled Gas Tube | Non-Final OA | Tokyo Electron Limited |
| 18417671 | HEATER ASSEMBLY, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Kokusai Electric Corporation |
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