Prosecution Insights
Last updated: April 19, 2026
Application No. 18/768,518

PAGE BUFFER, SEMICONDUCTOR MEMORY HAVING THE SAME, AND OPERATING METHOD OF THE SEMICONDUCTOR MEMORY

Non-Final OA §103
Filed
Jul 10, 2024
Examiner
TRAN, ANTHAN
Art Unit
2825
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
SK Hynix Inc.
OA Round
1 (Non-Final)
83%
Grant Probability
Favorable
1-2
OA Rounds
2y 5m
To Grant
85%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
629 granted / 760 resolved
+14.8% vs TC avg
Minimal +2% lift
Without
With
+2.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
25 currently pending
Career history
785
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
52.6%
+12.6% vs TC avg
§102
33.6%
-6.4% vs TC avg
§112
5.2%
-34.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 760 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-5 are rejected under 35 U.S.C. 103 as being unpatentable over Cho et al. (US Pub. 2022/0020404). Regarding claim 1, Fig. 5 of Cho discloses a semiconductor memory comprising: a memory block [100] including a plurality of pages [NS0 to NSn]; and a read/write circuit [210] including a plurality of page buffers [PBU0 to PBUn] connected to bit lines [BL0 to BLn] of the memory block, wherein the plurality of page buffers [PBU0 to PBUn] is capable of storing previous program data of a page programmed in a just previous program operation or specific data, and adjusting an evaluation period in a program verify operation of a currently selected page, based on the previous program data or the specific data [since page buffer circuit 200 of Cho is similar to page buffer circuit 160 of applicant, circuit 200 of Cho is capable of perform storing previous program data and adjusting an evaluation period]. Regarding claim 2, Fig. 6 of Cho discloses wherein each of the plurality of page buffers includes: a bit line controller [HVU and NM5] connected between any one of the bit lines [BL] and a sensing node [SO], the bit line controller capable of adjusting a potential level of the sensing node [SO, by turning on or off transistors HVU and NM5], based on a cell current amount of the bit line [BL], by performing an evaluation operation; a first latch unit [SL] connected to the sensing node [SO], the first latch unit capable of storing the previous program data or the specific data; and a second latch unit [FL] configured to latch verify data, based on the potential level of the sensing node. Regarding claim 3, Fig. 6 of Cho discloses wherein the first latch unit [SL] is capable of [capable of has been held that the recitation that an element is “capable of” performing a function is not a positive limitations but only requires the ability to so perform. It does not constritue a limitations in any patentable sense. In re Hutchison, 69 USPQ 138] adjusting the evaluation period by applying a power voltage to the sensing node or interrupting the application of the power voltage to the sensing node in the evaluation operation. Regarding claim 4, Fig. 6 of Cho discloses wherein the first latch unit includes: a latch connected between a first node [SO] and a second node [a node that directly connects to PRECHARGE CIRCUIT], the latch capable of latching the previous program data or the specific data; and a first transistor [HVU] and a second transistor [NM5], connected in series between a power voltage [power on BL] and the sensing node [SO], and wherein the first transistor [HVU] is capable of being turned on or turned off in response to a transmission signal [BLSLT], and the second transistor [NM5] is capable of being turned on or turned off in response to a potential of the first node [SO]. Regarding claim 5, Fig. 6 of Cho discloses wherein the first latch unit is capable of [capable of has been held that the recitation that an element is “capable of” performing a function is not a positive limitations but only requires the ability to so perform. It does not constritue a limitations in any patentable sense. In re Hutchison, 69 USPQ 138] setting an operation period of the evaluation operation as a second evaluation period shorter than a first evaluation period by applying the power voltage to the sensing node in the evaluation operation, when the first node is controlled to have a logic low level as the previous program data or the specific data is latched by the latch. Allowable Subject Matter Claims 6-8 are allowed. The following is an examiner’s statement of reasons for allowance: Regarding claims 6-8, the prior art does not teach or suggest either alone or in combination a method for operating a semiconductor memory, the method comprising: performing an evaluation operation of adjusting a potential level of a sensing node of the page buffer, based on a current amount of the bit lines, and then performing a program verify operation of latching verify data corresponding to the potential level of the sensing node, wherein the evaluation operation is performed during an evaluation period set as a first evaluation period or a second evaluation period shorter than the first evaluation period, based on the previous program data or the specific data, which is stored in the first latch unit and in combination with other limitations. Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.” Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANTHAN T TRAN whose telephone number is (571)272-8709. The examiner can normally be reached MON-FRI, 9AM-5:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Alexander G Sofocleous can be reached at 571-272-0635. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANTHAN TRAN/Primary Examiner, Art Unit 2825
Read full office action

Prosecution Timeline

Jul 10, 2024
Application Filed
Dec 23, 2025
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12586631
MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION
2y 5m to grant Granted Mar 24, 2026
Patent 12567463
THREE-STATE PROGRAMMING OF MEMORY CELLS
2y 5m to grant Granted Mar 03, 2026
Patent 12562225
HYBRID MEMORY FOR NEUROMORPHIC APPLICATIONS
2y 5m to grant Granted Feb 24, 2026
Patent 12548605
INTERFACE CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
2y 5m to grant Granted Feb 10, 2026
Patent 12548606
MULTI-MODE COMPATIBLE ZQ CALIBRATION CIRCUIT IN MEMORY DEVICE
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
83%
Grant Probability
85%
With Interview (+2.2%)
2y 5m
Median Time to Grant
Low
PTA Risk
Based on 760 resolved cases by this examiner. Grant probability derived from career allow rate.

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