HIGH EFFICENT MICRO DEVICES

Application No. 18/779,475

• Filed: Jul 22, 2024
• Priority: Mar 30, 2017 — provisional 62/479,038
  • Jul 17, 2017 — provisional 62/533,394
  • Mar 30, 2018 — CIP of 15/942,154
  • Jun 08, 2018 — provisional 62/682,479
  • Jun 13, 2018 — provisional 62/684,677
  • May 31, 2019 — continuation of 11/600,743
  • Jun 28, 2022 — continuation of 11/721,784
  • Jul 21, 2023 — continuation of 12/249,670
• Examiner: VU, DAVID
• Assignee: VueReal Inc.
• OA Round: 1 (Non-Final)

Office Action

Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
DETAILED ACTION
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention.

1. Claims 1-4 are rejected under 35 U.S.C. 102(a1) as being anticipated by Chen et al. (US 9,490,295; hereinafter Chen; see IDS dated 10/30/2024).
Regarding claim 1, Chen, in fig. 3C, discloses a microdevice structure comprising: a microdevice having a MIS contact 362 (on top of 323) and a microdevice contact 383 located on another part of the microdevice; a conductive layer 362 and a first dielectric layer 361 forming a MIS structure; and a second dielectric layer 361 covering at least where a trace 362 passes.
Regarding claim 2, Chen discloses wherein the MIS structure is underneath the trace 362 (fig. 3C).
Regarding claim 3, Chen discloses wherein the first dielectric layer 361 is the same as the second dielectric layer 361 (fig. 3C).
Regarding claim 4, Chen discloses wherein the trace 362 is the same as the conductive layer 362 of the MIS structure (fig. 3C).

Conclusion
2. Any inquiry concerning this communication or earlier communications from the examiner should be directed to David Vu whose telephone number is [phone]. The examiner can normally be reached on Monday-Friday from 8:00am to 5:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempt to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Steven Loke H can be reached on [phone]. The fax phone number for the organization where this application or proceeding is assigned is [phone].
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/DAVID VU/
Primary Examiner, Art Unit 2818

Prosecution Timeline

• Jul 22, 2024: Application Filed
• Jul 14, 2026: Non-Final Rejection mailed — §102 (current)