CTNF 18/788,633 CTNF 83587 Notice of Pre-AIA or AIA Status 07-03-aia AIA 15-10-aia The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. Claim Rejections - 35 USC § 112 07-30-02 AIA The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. 07-34-01 Claims 7-10 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claim 7, it is impossible to form “a metal material on the first type of silicide layer” “before the forming of the first type of silicide layer.” Claims 8 to 10 depend from claim 7. Allowable Subject Matter 12-151-07 AIA 07-97 12-51-07 Claim s 1-6 and 11-20 are allowed. 13-03-01 AIA The following is a statement of reasons for the indication of allowable subject matter: Prior art does not teach “forming a first type of silicide layer over a first source/drain region of a p-type transistor but not over a second source/drain region of an n-type transistor; forming a first segment of a second type of silicide layer over the first type of silicide layer of the p-type transistor and forming a second segment of the second type of silicide layer over the second source/drain region of the n-type transistor;” (claim 1); “forming a ruthenium silicide layer over a first source/drain region of a first transistor but not over a second source/drain region of a second transistor; forming a first portion of a titanium silicide layer over the ruthenium silicide layer and forming a second portion of the titanium silicide layer over the second source/drain region” (claim 13); “forming a first silicide layer over a first source/drain of a p-type transistor, wherein the first silicide layer is not formed over a second source/drain of an n-type transistor, and wherein the first silicide layer has a first material composition; simultaneously forming: a first segment of a second silicide layer over the first silicide layer; and a second segment of the second silicide layer over the second source/drain” (claim 18). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to FEIFEI YEUNG LOPEZ whose telephone number is (571)270-1882. The examiner can normally be reached M-F: 8am to 4pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Dale Page can be reached at 571 270 7877. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /FEIFEI YEUNG LOPEZ/Primary Examiner, Art Unit 2899 Application/Control Number: 18/788,633 Page 2 Art Unit: 2899
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