Prosecution Insights
Last updated: October 02, 2026
Application No. 18/802,110

SEMICONDUCTOR DEVICE

Non-Final OA §102
Filed
Aug 13, 2024
Priority
Aug 30, 2023 — JP 2023-139871
Examiner
TRAN, TAN N
Art Unit
Tech Center
Assignee
Fuji Electric Co., Ltd.
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allowance Rate
974 granted / 1121 resolved
+26.9% vs TC avg
Moderate +10% lift
Without
With
+9.9%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
31 currently pending
Career history
1158
Total Applications
across all art units

Statute-Specific Performance

§101
1.7%
-38.3% vs TC avg
§103
50.5%
+10.5% vs TC avg
§102
33.8%
-6.2% vs TC avg
§112
7.6%
-32.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1121 resolved cases

Office Action

§102
DETAILED ACTION Specification 1. The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. Claim Objections 2. Claim 1 is objected to because of the following informalities: In claim 1, line 12, “an insulating layer provided between the respective wiring layers” should be changed to “an insulating layer respectively provided between the first and second wiring layers” Appropriate correction is required. Claim Rejections - 35 USC § 102 3. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. 4. Claim(s) 1 – 9, 14 - 16 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Chang et al. (20230420429). With regard to claim 1, Chang et al. disclose a semiconductor device comprising: first and second semiconductor chips (referred to as “405A” and “405B” by examiner’s annotation shown in fig. 16 below; wherein the first and second semiconductor chips 405A, 405B made from the silicon structures 405 and wherein the silicon structure 405A, 405B include a silicon substrate 410, as thinned and diced provided separately from each other, functions as first and second semiconductor chips; for example, see paragraph [0034]); each semiconductor chip including a first main electrode (referred to as “498A” by examiner’s annotation shown in fig. 16 below; wherein the first main electrode 498A made from the metal structure 498) on a top surface side and a second main electrode (referred to as “408A” by examiner’s annotation shown in fig. 16 below; wherein the second main electrode 408A made from the conductive structure 408) on a bottom surface side; and a printed circuit board (a printed circuit board 100; or an interposer structures 400, 500 forming in a printed circuit board 100, functions as a printed circuit board) provided at a circumference of the first and second semiconductor chips (405A, 405B), the printed circuit board including a plurality of wiring layers (474, 580) including a first wiring layer (referred to as “580A” by examiner’s annotation shown in fig. 16 below; wherein the first wiring layers 580A made from the wiring layer 580) which is an uppermost layer (500) electrically connected to the first main electrode (498A) of the first semiconductor chip (405A) through a connection member (referred to as “498B” by examiner’s annotation shown in fig. 16 below), and a second wiring layer (referred to as “474A” by examiner’s annotation shown in fig. 16 below) which is a lowermost layer (a lowermost layer having die-side redistribution dielectric layers 472) electrically connected to the first wiring layer (580A) through a via (486) and further to the second main electrode (408A) of the second semiconductor chip (405B), and an insulating layer (490, 472) provided between the respective wiring layers (580A, 474A). PNG media_image1.png 651 1080 media_image1.png Greyscale With regard to claim 2, Chang et al. disclose the connection member (498B) is a bonding wire. With regard to claim 3, Chang et al. disclose an external connection terminal (180) electrically connected to the first wiring layer (580A). With regard to claim 4, Chang et al. disclose the plural wiring layers further include a third wiring layer (referred to as “580C” by examiner’s annotation shown in fig. 16 below; wherein the first wiring layers 580C made from the wiring layer 580) which is the uppermost layer (500) provided separately from the first wiring layer (580A) and electrically connected to the first main electrode (498A) of the second semiconductor chip (405B) through a connection member (referred to as “498C” by examiner’s annotation shown in fig. 16 below). PNG media_image2.png 656 1083 media_image2.png Greyscale With regard to claim 5, Chang et al. disclose an external connection terminal (180) electrically connected to the third wiring layer (580C). With regard to claim 6, Chang et al. disclose the plural wiring layers further include: a third wiring layer (referred to as “474C” by examiner’s annotation shown in fig. 16 below; wherein the third wiring layers 474C made from the wiring layer 474) which is the lowermost layer provided separately from the second wiring layer (474A) and electrically connected to the second main electrode of the first semiconductor chip (405B); and a fourth wiring layer (referred to as “580D” by examiner’s annotation shown in fig. 16 below; wherein the fourth wiring layer 580D are made from the wiring layer 580) which is the uppermost layer (500) provided separately from the first wiring layer (580A) and electrically connected to the third wiring layer (474C) through a via (486). PNG media_image3.png 651 1082 media_image3.png Greyscale With regard to claim 7, Chang et al. disclose an external connection terminal (180) electrically connected to the fourth wiring layer (580D). With regard to claim 8, Chang et al. disclose the first semiconductor chip further includes a control electrode (bonding interconnection pads 588 functions as a control electrode) on the top surface side; and the plural wiring layers further include a third wiring layer (referred to as “580C” by examiner’s annotation shown in fig. 16 below; wherein the third wiring layer 580C are made from the wiring layer 580) which is the uppermost layer (500) provided separately from the first wiring layer (580A) and electrically connected to the control electrode (588) of the first semiconductor chip (405A) through a connection member (referred to as “498C” by examiner’s annotation shown in fig. 16 below), a fourth wiring layer (referred to as “474D” by examiner’s annotation shown in fig. 16 below; wherein the fourth wiring layer 474D are made from the wiring layer 474) provided as a lower layer than the third wiring layer (580C) and electrically connected to the third wiring layer (580C) through a via (486), and a fifth wiring layer (referred to as “580E” by examiner’s annotation shown in fig. 16 below; wherein the fifth wiring layer 580E are made from the wiring layer 580) which is the uppermost layer (500) provided separately from each of the first wiring layer (580A) and the third wiring layer (580C) and electrically connected to the fourth wiring layer (474D) through a via (486). PNG media_image4.png 662 1086 media_image4.png Greyscale With regard to claim 9, Chang et al. disclose a first control terminal (180) electrically connected to the fifth wiring layer (580E). With regard to claim 14, Chang et al. disclose the printed circuit board is provided with a first opening (referred to as “OP1” by examiner’s annotation shown in fig. 16 below) surrounding the first semiconductor chip (405A) and a second opening (referred to as “OP2” by examiner’s annotation shown in fig. 16 below) surrounding the second semiconductor chip (405B). PNG media_image5.png 654 1100 media_image5.png Greyscale With regard to claim 15, Chang et al. disclose an insulated circuit substrate including: an insulating substrate (referred to as “SB” by examiner’s annotation shown in fig. 16 below); a first circuit plate (one of conductive layers 478 functions as a first circuit plate) and a second circuit plate (one of conductive layers 478 functions as a second circuit plate) provided separately from each other on a top surface side of the insulating substrate (SB); and a heat-releasing plate (solder material portions 790 functions as a heat-releasing plate) provided on a bottom surface side of the insulating substrate (SB), wherein the first semiconductor chip (405A) is provided on the first circuit plate (one of conductive layers 478 functions as a first circuit plate), and the second semiconductor chip (405B) is provided on the second circuit plate (one of conductive layers 478 functions as a second circuit plate). PNG media_image6.png 568 885 media_image6.png Greyscale With regard to claim 16, Chang et al. disclose the plural wiring layers further include a third wiring layer (referred to as “474C” by examiner’s annotation shown in fig. 16 below) which is the lowermost layer provided separately from the second wiring layer (474A) and electrically connected to the second main electrode (408A) of the first semiconductor chip (405A); the second wiring layer (474A) and the third wiring layer (474C) each have a top surface partly exposed on the insulating layer (472); the first semiconductor chip (405A) is provided on the exposed top surface of the third wiring layer (474C); and the second semiconductor chip (405B) is provided on the exposed top surface of the second wiring layer (474A). PNG media_image7.png 665 1098 media_image7.png Greyscale Allowable Subject Matter 5. Claims 10 - 13 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Claims 10 - 13 are allowable over the prior art of record, because none of these references disclose or can be combined to yield the claimed invention such as the plural wiring layers further include: a sixth wiring layer which is the uppermost layer provided separately from each of the first wiring layer, the third wiring layer, and the fifth wiring layer and electrically connected to the first main electrode of the first semiconductor chip through a connection member; a seventh wiring layer provided as a lower layer than the fourth wiring layer and electrically connected to the sixth wiring layer through a via; and an eighth wiring layer which is the uppermost layer provided separately from each of the first wiring layer, the third wiring layer, the fifth wiring layer, and the sixth wiring layer and electrically connected to the seventh wiring layer through a via as recited in claim 10. Conclusion 6. Any inquiry concerning this communication or earlier communications from the examiner should be directed to TAN N TRAN whose telephone number is (571) 272 - 1923. The examiner can normally be reached on 8:30-5:00PM. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Davienne Monbleau can be reached on (571) 272-1945. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /TAN N TRAN/ Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Aug 13, 2024
Application Filed
Sep 09, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
97%
With Interview (+9.9%)
2y 1m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1121 resolved cases by this examiner. Grant probability derived from career allowance rate.

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