Prosecution Insights
Last updated: October 02, 2026
Application No. 18/817,574

STACKED WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE

Non-Final OA §102§103
Filed
Aug 28, 2024
Priority
Sep 01, 2023 — JP 2023-142280
Examiner
JAHAN, BILKIS
Art Unit
Tech Center
Assignee
Shinko Electric Industries Co., Ltd.
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
3m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allowance Rate
821 granted / 926 resolved
+28.7% vs TC avg
Moderate +10% lift
Without
With
+10.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
26 currently pending
Career history
959
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
54.6%
+14.6% vs TC avg
§102
23.7%
-16.3% vs TC avg
§112
13.5%
-26.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 926 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Attorney Docket Number: OTI-033811 US ORD Filling Date: 08/28/24 Priority Date: 09/01/2023 Inventor: Tsukamoto et al Examiner: Bilkis Jahan DETAILED ACTION In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-2, 4 and 11 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Shimizu et al (US 2015/0357276 A1). Regarding claim 1, Shimizu discloses a stacked wiring substrate (Fig. 1), comprising: a first wiring substrate 11 (Para. 23); and a second wiring substrate 12 (Para. 23) mounted on the first wiring substrate 11, wherein the first wiring substrate 11 includes a first wiring layer 23 (Para. 27), a first insulating layer 20 (Para. 25) covering the first wiring layer 23, a second wiring layer 32 (Para. 28) stacked on an upper surface of the first insulating layer 20 and electrically connected to the first wiring layer 23, a second insulating layer 33 (Para. 31) stacked on the upper surface of the first insulating layer 20 and covering the second wiring layer 32, and a first electrode pad 36 (Para. 28) stacked on an upper surface of the second insulating layer 33 and electrically connected to the second wiring layer 32, the second wiring substrate 12 includes a wiring structure having a wiring density that is higher than that of the first wiring substrate 11, and a second electrode pad 50 (Para. 36) connected to the first electrode pad 36, and a thickness of the second insulating layer 33 is less than a thickness of the first insulating layer 20 (Fig. 1). Regarding claim 2, Shimizu discloses the stacked wiring substrate according to claim 1, wherein the second insulating layer 33 includes a first through hole 32, 34 extending through the second insulating layer 33 in a thickness-wise direction and exposing part of an upper surface of the second wiring layer 32, and the first electrode pad 36 is formed integrally with first via wiring 34 that fills the first through hole (Fig. 1). Regarding claim 4, stacked wiring substrate according to claim 1, wherein a thickness of the second via wiring 32 is greater than a thickness of the first wiring layer 23, and a thickness of the first via wiring 34 is equal to or less than a thickness of the second wiring layer 32. Regarding claim 11, Shimizu discloses the semiconductor device, comprising: the stacked wiring substrate according to claim 1; and a semiconductor chip 81 (Fig. 4, Para. 79) mounted on the second wiring substrate 12. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 3 and 10 are rejected under 35 U.S.C. 103 as being unpatentable over Shimizu et al (US 2015/0357276 A1). Regarding claim 3, Shimizu discloses the stacked wiring substrate according to claim 2, wherein the first insulating layer 20 includes a second through hole 21 extending through the first insulating layer 20 in the thickness-wise direction and exposing part of an upper surface of the first wiring layer 23, the second wiring layer is 32 formed integrally with second via wiring 21 that fills the second through hole 21. Shimizu does not explicitly disclose first via wiring has a size that is smaller than that of the second via wiring in plan view. However, Shimizu discloses first via wiring 23 and second via wiring 32. Therefore, it would have been obvious to one of the ordinary skill of the art before the effective filling date of the claimed invention to obtain first via wiring has a size that is smaller than that of the second via wiring in plan view for intended purposes. the applicants have not established the criticality (see next paragraph below) of the size. CRITICALITY The specification contains no disclosure of either the critical nature of the claimed size or any unexpected results arising therefrom. Where patentability is said to be based upon particular chosen dimensions or upon another variable recited in a claim, the applicant must show that the chosen dimensions are critical. In re Woodruff, 919 F.2d 1575, 1578, 16 USPQ2d 1934, 1936 (Fed. Cir. 1990). Regarding claim 10, Shimizu does not explicitly disclose the stacked wiring substrate according to claim 1, wherein the first electrode pad has a size that is smaller than that of the second electrode pad in plan view. However, Shimizu discloses the width in the section of the first electrode pad 36 has a size that is smaller than that of the second electrode pad 50 (Para. 36). It would have been obvious to one of the ordinary skill of the art before the effective filling date of the claimed invention to obtain the first electrode pad has a size that is smaller than that of the second electrode pad in plan view for intended purposes. the applicants have not established the criticality (see next paragraph below) of the width. CRITICALITY The specification contains no disclosure of either the critical nature of the claimed width or any unexpected results arising therefrom. Where patentability is said to be based upon particular chosen dimensions or upon another variable recited in a claim, the applicant must show that the chosen dimensions are critical. In re Woodruff, 919 F.2d 1575, 1578, 16 USPQ2d 1934, 1936 (Fed. Cir. 1990). Allowable Subject Matter Claims 5-8 and 9 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to BILKIS JAHAN whose telephone number is (571)270-5022. The examiner can normally be reached Monday-Friday, 8:00 am-5 Pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Marlon T Fletcher can be reached at (571)272-2063. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. BILKIS . JAHAN Primary Examiner Art Unit 2817 /BILKIS JAHAN/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Aug 28, 2024
Application Filed
Sep 10, 2026
Non-Final Rejection mailed — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
99%
With Interview (+10.2%)
2y 4m (~3m remaining)
Median Time to Grant
Low
PTA Risk
Based on 926 resolved cases by this examiner. Grant probability derived from career allowance rate.

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