DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Priority
Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55.
Information Disclosure Statement
The information disclosure statements (IDS) were submitted on 10/1/24 and 4/10/26. The submissions are in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statements have been considered by the examiner.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 2-4 and 8-9 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 2 refers to a “classical capacitance of the semiconductor device”. It is unclear what is meant by this phrase because there does not appear to be a universal definition of what is considered “classical capacitance”.
Claim 3 refers to a “classical capacitance of the semiconductor device”. It is unclear what is meant by this phrase because there does not appear to be a universal definition of what is considered “classical capacitance”.
Claim 4 refers to a “classical capacitance of the semiconductor device”. It is unclear what is meant by this phrase because there does not appear to be a universal definition of what is considered “classical capacitance”.
Claim 8 refers to a “a nonclassical behavior”. It is unclear what is meant by this phrase because there does not appear to be a universal definition of what is considered “nonclassical behavior”.
Claim 9 refers to a “a nonclassical behavior”. It is unclear what is meant by this phrase because there does not appear to be a universal definition of what is considered “nonclassical behavior”.
Allowable Subject Matter
Claims 1, 5-7, and 10-11 are allowed.
Claim 1 contains allowable subject matter because of the limitation the electrical bias includes an out-of-plane component perpendicular to the plane of the low-dimensional electron gas; wherein the room temperature MIS structure has topological states that are formed by application of the electrical bias followed by injection of charge carriers. Claims 5-7 and 10-11 depend on claim 1.
The closest prior art is Zhang et al. (U.S. 2012/0138887 A1; “Zhang”) which discloses forming a low-dimensional electron gas in a room temperature MIS (Metal/Insulator/Semiconductor) structure with an electrical bias, wherein the electrical bias includes an in-plane component in a plane of the low-dimensional electron gas ([0093], [0108], [0113], [0079]). Yet, Zhang does not disclose the electrical bias includes an out-of-plane component perpendicular to the plane of the low-dimensional electron gas and wherein the room temperature MIS structure has topological states that are formed by application of the electrical bias followed by injection of charge carriers and these features are not rendered obvious by the prior art.
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/REEMA PATEL/Primary Examiner, Art Unit 2812 9/24/2026
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