Prosecution Insights
Last updated: October 02, 2026
Application No. 18/853,562

HIGH PRESSURE COUPLING ASSEMBLY

Final Rejection §102§103
Filed
Oct 02, 2024
Priority
Apr 12, 2022 — provisional 63/329,938 +2 more
Examiner
BOOSALIS, FANI POLYZOS
Art Unit
2884
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
ASML Holding N.V.
OA Round
2 (Final)
90%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allowance Rate
1148 granted / 1272 resolved
+22.3% vs TC avg
Moderate +11% lift
Without
With
+10.8%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 12m
Avg Prosecution
27 currently pending
Career history
1295
Total Applications
across all art units

Statute-Specific Performance

§101
2.2%
-37.8% vs TC avg
§103
52.4%
+12.4% vs TC avg
§102
33.4%
-6.6% vs TC avg
§112
10.6%
-29.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1272 resolved cases

Office Action

§102 §103
/UZMA ALAM/Supervisory Patent Examiner, Art Unit 2884 DETAILED ACTION Notice of Pre-AIA or AIA Status The present application is being examined under the pre-AIA first to invent provisions. Response to Arguments Applicant’s arguments, see pages 6-9, filed 7/28/2026, with respect to the rejection(s) of claim(s) 9, 11-13, 15-16, 18-19, 22-25, 27-29, 33-36, 38 under 35 U.S.C. 103 have been fully considered and are persuasive. Therefore, the rejection has been withdrawn. However, upon further consideration, a new ground(s) of rejection is made in view of Dijksman et al (US 10481498 B2) and Webb et al (CZ 294252 B6). A Final Rejection is made necessitated by amendment. Response to Amendment The amendment submitted 7/28/2026 has been accepted and entered. Claims 9, 29 are amended. New claims 40-41 are added. No claims are further cancelled. Thus, claims 9, 11-13, 15-16, 18-19, 22-25, 27-29, 33-36, 38, 40-41 are examined. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – Claim(s) 9, 11-12, 15-16, 18-19, 22-25, 27-29, 33-34, 36, 38, 40-41 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Dijksman et al (US 10481498 B2). Regarding claim 9, Dijksman et al discloses a coupling assembly in an extreme ultraviolet EUV) light source target material generator (col. 6, lines 60-col. 7, lines 9), comprising: a first fitting coupled to a second fitting and forming a molten target (molten tin) (col. 12, lines 10-20) material flow conduit (360) (duct) (See Fig. 3 and col. 13, lines 4-29) therebetween that is within the EUV light source target material generator, wherein a seal (coating) (col. 17, lines 17-34) is formed between the first fitting and the second fitting; and a sleeve (coating) disposed along inner walls of the flow conduit and between the seal and the flow conduit (coating helps to reduce surface wear and/or make the surface chemically inert to fuel and any contamination) such that a contaminant trap is formed between the sleeve and the seal (col. 7, lines 56-col. 8, line 5). Regarding claim 11, Dijksman et al discloses further comprising a sealing device disposed between the first fitting and the second fitting, the sealing device forming the seal between the first fitting and the second fitting (col. 10, lines 7-13). Regarding claim 12, Dijksman et al discloses wherein the sealing device comprises a gasket placed between the first and second fitting (col. 10, lines 7-13). Regarding claim 15, Dijksman et al discloses wherein the first and second fitting comprise a refractory metal (i.e. (e.g., titanium, tungsten, molybdenum and rhenium, in general all refractory metals), silicon or a silicon based compound, such as silicon nitride, silicon carbide or for very high pressure application diamond) (col. 9, lines 36-39). Regarding claim 16, Dijksman et al discloses wherein the refractory metal of the first and second fitting comprises molybdenum (i.e. titanium, tungsten, molybdenum and rhenium) (col. 9, lines 36-39). Regarding claim 18, Dijksman et al discloses wherein the sleeve is configured to trap contaminants within a region between the sleeve and the inner walls of the flow conduit, some of the contaminants being formed from the interaction between the seal and a target material flowing within the flow conduit (coating helps to reduce surface wear and/or make the surface chemically inert to fuel and any contamination) such that a contaminant trap is formed between the sleeve and the seal (col. 7, lines 56-col. 8, line 5). Regarding claim 19, Dijksman et al discloses wherein the sleeve includes at least one protrusion that extends across the region and circumferentially contacts an inner wall of the flow conduit (See Fig. 3 and col. 7, lines 56-col. 8, line 5). Regarding claim 22, Dijksman et al discloses wherein the seal is directly formed between a first conical surface of the first fitting and a second conical surface of the second fitting when the first conical surface and the second conical surface are frictionally engaged (conical inlet) (col. 16, lines 18-31). Regarding claim 23, Dijksman et al discloses wherein the sleeve is an annular protrusion of the first fitting (col. 17, line 11-16). Regarding claim 24, Dijksman et al discloses wherein the sleeve is an annular gasket positioned between the first and second fitting (See Fig. 3 and col. 10, lines 7-13). Regarding claim 25, Dijksman et al discloses wherein further comprising a sealing gasket disposed between the first fitting and the second fitting, the sealing gasket forming the seal between the first fitting and the second fitting (See Fig. 3 and (col. 17, line 11-16). Regarding claim 27, Dijksman et al discloses wherein the annular gasket is disposed concentrically inside the sealing gasket (See Fig. 3 and col. 10, lines 7-13, col. 17, line 11-16). Regarding claim 28, Dijksman et al discloses wherein a width of the sealing gasket, when in a relaxed state, is greater than a width of the annular gasket, when in a relaxed state (col. 10, lines 7-13). Regarding claim 29, Dijksman et al discloses a target material generator (col. 6, lines 60-col. 7, lines 9) for an extreme ultraviolet light source, comprising: a fluid flow path (360) (duct) (See Fig. 3 and col. 13, lines 4-29) between a reservoir system (375) and a nozzle system (383) (col. 10, lines 14-29; and a coupling assembly in the first flow path, the coupling assembly comprising: a first fitting coupled to a second fitting to thereby form a molten target material flow conduit (360) (duct) (See Fig. col. 13, lines 4-29) along the fluid flow path (molten tin) (col. 12, lines 10-20), wherein a seal (coating) (col. 17, lines 17-34 is formed between the first fitting and the second fitting; and a sleeve (coating) disposed along inner walls of the flow conduit and between the seal and the flow conduit such that a contaminant trap is formed between the sleeve and the seal (coating helps to reduce surface wear and/or make the surface chemically inert to fuel and any contamination) such that a contaminant trap is formed between the sleeve and the seal (col. 7, lines 56-col. 8, line 5). Regarding claim 33, Dijksman et al discloses further comprising a sealing device disposed between the first fitting and the second fitting, the sealing device forming the seal between the first fitting and the second fitting (col. 10, lines 7-13). Regarding claim 34, Dijksman et al discloses wherein the sealing device comprises a gasket placed between the first and second fitting (col. 10, lines 7-13). Regarding claim 36, Dijksman et al discloses wherein the first and second fitting comprise a refractory metal (i.e. (e.g., titanium, tungsten, molybdenum and rhenium, in general all refractory metals), silicon or a silicon based compound, such as silicon nitride, silicon carbide or for very high pressure application diamond) (col. 9, lines 36-39). Regarding claim 38, Dijksman et al discloses wherein the sleeve is configured to trap contaminants within a region between the sleeve disposed and the inner walls of the flow conduit, some of the contaminants being formed from the interaction between the seal and a target material flowing within the flow conduit and along the fluid flow path between the reservoir and the nozzle supply system (col. 7, lines 56-col. 8, line 5). Regarding claim 40, Dijksman et al discloses wherein: the first fitting defines a first inner wall; the second fitting defines a second inner wall; the second fitting is coupled to and arranged axially relative to the first fitting (See Fig. 3); and the flow conduit (360) (duct) (See Fig. 3 and col. 13, lines 4-29) is formed by and defined by the first inner wall and the second inner wall. Regarding claim 41, Dijksman et al discloses wherein the sleeve is non-hermetically-sealing, is at least partly inside of the seal, and is arranged inside one or more of the first fitting and the second fitting (col. 10, lines 7-13). Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 13, 35 is/are rejected under 35 U.S.C. 103 as being unpatentable over Dijksman et al (US 10481498 B2) in view of Webb et al (CZ 294252 B6). Regarding claim 13, Dijksman et al discloses all of the limitations of claim 12, as describes supra however, Dijksman et al is silent with regards to a polyimide gasket. Webb et al discloses wherein the gasket comprises polyimide (i.e. impermeable, non-degradable plastic material such as nylon and polyethylene and other metal parts, etc.). Thus, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Dijksman et al of a coupling assembly in an extreme ultraviolet EUV) light source target material generator with Webb et al of a coupling assembly for connecting a dual-wall pipe. A person of ordinary skill in the art would have been motivated to do this to improve sealing efficiency, thermal stability, or chemical resistance in high-stress environments. Regarding claim 35, Dijksman et al discloses all of the limitations of parent claim 29, as describes supra however, Dijksman et al is silent with regards to press fitted or threaded seal as claimed. wherein the first fitting and the second fitting are press fitted together or are threaded together to thereby form the seal at the interface between the first fitting and the second fitting (See Abstract, Section: Detailed Description of the Invention, paragraph 9). Thus, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Dijksman et al of a coupling assembly in an extreme ultraviolet EUV) light source target material generator with Webb et al of a coupling assembly for connecting a dual-wall pipe. A person of ordinary skill in the art would have been motivated to do this to improve security of seal between fittings. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Bykanov et al (US 8,519,366 B2) discloses a device comprising: a vessel; a material disposed in the vessel for creating an EUV light emitting plasma at a plasma site, the plasma generating debris; a near normal incidence EUV reflective optic disposed in the vessel; and a source of a magnetic field for deflecting debris in the vessel to protect the optic, the source positioned to interpose the optic between the source and the plasma site. Algots et al (US 7122816 B2) discloses an EUV light source plasma source material handling system and method comprising: a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line. The supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form. Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to FANI POLYZOS BOOSALIS whose telephone number is (571)272-2447. The examiner can normally be reached 7:30-3:30 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Uzma Alam can be reached at Uzma.Alam@USPTO.GOV. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /F.P.B./Examiner, Art Unit 2884 /UZMA ALAM/Supervisory Patent Examiner, Art Unit 2884
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Prosecution Timeline

Oct 02, 2024
Application Filed
Apr 28, 2026
Non-Final Rejection mailed — §102, §103
Jul 28, 2026
Response Filed
Sep 10, 2026
Final Rejection mailed — §102, §103 (current)

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Prosecution Projections

3-4
Expected OA Rounds
90%
Grant Probability
99%
With Interview (+10.8%)
1y 12m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 1272 resolved cases by this examiner. Grant probability derived from career allowance rate.

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