Prosecution Insights
Last updated: October 04, 2026
Application No. 18/895,117

SEMICONDUCTOR DEVICE

Non-Final OA §102§112
Filed
Sep 24, 2024
Priority
Sep 27, 2023 — JP 2023-165987
Examiner
CRITE, ANTONIO B
Art Unit
Tech Center
Assignee
LAPIS Technology Co., Ltd.
OA Round
1 (Non-Final)
82%
Grant Probability
Favorable
1-2
OA Rounds
4m
Est. Remaining
68%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allowance Rate
376 granted / 461 resolved
+21.6% vs TC avg
Minimal -13% lift
Without
With
+-13.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
27 currently pending
Career history
484
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
54.1%
+14.1% vs TC avg
§102
24.6%
-15.4% vs TC avg
§112
19.6%
-20.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 461 resolved cases

Office Action

§102 §112
DETAILED ACTION This Action is responsive to the communication filed on 09/24/2024. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Claim Rejections - 35 USC § 112 Claims 1-8 are rejected under 35 U.S.C. 112(b) as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor, regards as the invention. Claim 1 recites the limitation "the other principal surface" (emphasis added) in lines 8-9. There is insufficient antecedent basis for this limitation in the claim. Additionally, it is unclear whether or not the recited claim limitation of "the other principal surface" (emphasis added) is meant to refer to back to “a one principal surface” (emphasis added) or introduce another principal surface. For purposes of compact prosecution, the Examiner will interpret “the other principal surface” as a surface facing the opposite direction of the one principal surface. Claims 2-8 are also rejected under 35 U.S.C. 112(b) as being indefinite due to the claims’ dependency to Claim 1. Claims 5-7 are rejected under 35 U.S.C. 112(b) as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor, regards as the invention. Claim 5, which depends from Claim 1, recites the limitation "the plurality of through holes" (emphasis added) in line 2. There is insufficient antecedent basis for this limitation in the claim. Claims 6-7 are also rejected under 35 U.S.C. 112(b) as being indefinite due to the claims’ dependency to Claim 5. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-4 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Raposas (US 2020/0211933). Regarding claim 1, Raposas (see, e.g., FIG. 1-FIG. 4, FIG. 6) discloses a semiconductor device comprising: a lead frame 110, 111, 131 including a plate-shaped die pad 110 and a lead 111, the die pad 110 having one principal surface e.g., top surface of 110 with a mounting region e.g., center of 110 for mounting a semiconductor chip 180, the die pad 110 including a side portion e.g., inner side 121 and a frame-shaped protrusion 130 on the side portion e.g., inner side 121 in top view, the protrusion 130 overhanging in a lateral direction in an eave shape along the one principal surface e.g., top surface of 110 (Para 0020, Para 0021, Para 0024); the semiconductor chip 180 mounted on the mounting region e.g., center of 110 (Para 0021); and a sealing body 190 covering a side surface e.g., side surface of 110 of the die pad 110 while exposing the other principal surface e.g., bottom surface of 110 of the die pad 110 and sealing the semiconductor chip 180 on the one principal surface e.g., top surface of 110 of the die pad 110, the sealing body 190 holding the die pad 110 and the lead 111, wherein the die pad 110 has a through hole 121 penetrating the protrusion 130 in a direction e.g., vertical direction intersecting with the one principal surface e.g., top surface of 110 (Para 0020, Para 0024). Regarding claim 2, Raposas (see, e.g., FIG. 1-FIG. 4, FIG. 6) teaches the semiconductor device according to claim 1, wherein the through hole 121 is formed so as to penetrate a portion of a base e.g., inner boundary of the protrusion 130. Regarding claim 3, Raposas (see, e.g., FIG. 1-FIG. 4, FIG. 6) teaches the semiconductor device according to claim 2, wherein the through hole 121 includes a notch portion 126 terminating without reaching the other principal surface e.g., bottom surface of 110 of the die pad 110 from a portion inside the base e.g., inner boundary of the protrusion 130 of the one principal surface of the die pad 110 (Para 0020-Para 0021). Regarding claim 4, Raposas (see, e.g., FIG. 1-FIG. 4, FIG. 6) teaches the semiconductor device according to claim 1, wherein the through hole 121 penetrates the protrusion 130 in a direction e.g., vertical direction perpendicular to the one principal surface e.g., top surface of 110. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANTONIO CRITE whose telephone number is (571) 270-5267. The examiner can normally be reached Monday - Friday, 10:00 am - 6:30 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kretelia Graham can be reached at (571) 272-5055. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANTONIO B CRITE/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Sep 24, 2024
Application Filed
Sep 23, 2026
Non-Final Rejection mailed — §102, §112 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
82%
Grant Probability
68%
With Interview (-13.4%)
2y 4m (~4m remaining)
Median Time to Grant
Low
PTA Risk
Based on 461 resolved cases by this examiner. Grant probability derived from career allowance rate.

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