Prosecution Insights
Last updated: April 18, 2026
Application No. 18/898,293

SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR MEMORY APPARATUS

Non-Final OA §102
Filed
Sep 26, 2024
Examiner
TRAN, ANTHAN
Art Unit
2825
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
SK Hynix Inc.
OA Round
1 (Non-Final)
83%
Grant Probability
Favorable
1-2
OA Rounds
2y 5m
To Grant
85%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
629 granted / 760 resolved
+14.8% vs TC avg
Minimal +2% lift
Without
With
+2.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
25 currently pending
Career history
785
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
52.6%
+12.6% vs TC avg
§102
33.6%
-6.4% vs TC avg
§112
5.2%
-34.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 760 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-6 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Ohno (US Pub. 2021/0342242). Regarding claim 1, Fig. 1 of Ohno discloses a semiconductor memory apparatus comprising: a temperature detecting circuit [30] configured to detect a temperature to generate temperature detection information [temperature signal to circuit 12]; a heating control circuit [12] configured to provide, based on the temperature detection information, a command control signal and a heating data signal that toggles [command and data input to memory device 20]; and a memory bank circuit [20] configured to store therein the heating data signal based on the command control signal [memory device 20 stores data corresponding to command from controller 10], wherein the memory bank circuit [20] is configured to generate heat through a toggling operation [since memory device operates under electrical current, every time memory device 20 operates to read/write data, it inherently generates heat]. Regarding claim 2, Fig. 1 of Ohno discloses wherein the command control signal includes a write control signal, and wherein the memory bank circuit is configured to perform a write operation of storing therein the heating data signal based on the write control signal [memory device 20 operates responsive to commands from controller 10]. Regarding claim 3, Fig. 1 Ohno discloses wherein the heating control circuit [10] includes: a write control circuit configured to generate the write control signal based on the temperature detection information [signal from temperature sensor 30]; and a data providing circuit configured to provide, based on the temperature detection information, the heating data signal to the memory bank circuit [controller 10 control writing operation of memory 20 base on temperature information, as steps S19 in Fig. 2]. Regarding claim 4, Fig. 1 of Ohno discloses wherein the command control signal includes read and write (read/write) control signals [controller 10 controls both read and write operations of memory 20], wherein the memory bank circuit is configured to perform, based on the read control signal, a read operation of reading out data stored in the memory bank circuit [step S12 in Fig. 2], and wherein the memory bank circuit is configured to perform, based on the write control signal, a write operation of storing into the memory bank circuit the heating data signal [step S19 in Fig. 2], which is inverted from the read-out data from the memory bank circuit. Regarding claim 5, Fig. 1 of Ohno discloses wherein the heating control circuit includes: a read/write control circuit configured to generate the read/write control signals based on the temperature detection information [step S12 and step S19]; and a data inverting circuit configured to generate, based on the temperature detection information, the heating data signal, which is inverted from the read-out data from the memory bank circuit [as shows in Fig. 2 and Fig. 1, memory read/write operations are performed in response to temperature signal from senser 30]. Regarding claim 6, Fig. 2 of Ohno discloses wherein, in an inversion write mode, a pair of the read operation on the data stored in the memory bank circuit [20, Fig. 1] and the write operation on the heating data signal is performed an even number of times [both read and write operations can perform an even number of times (for example 2 times)]. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANTHAN T TRAN whose telephone number is (571)272-8709. The examiner can normally be reached MON-FRI, 9AM-5:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Alexander G Sofocleous can be reached at 571-272-0635. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANTHAN TRAN/Primary Examiner, Art Unit 2825
Read full office action

Prosecution Timeline

Sep 26, 2024
Application Filed
Apr 04, 2026
Non-Final Rejection — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12586631
MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION
2y 5m to grant Granted Mar 24, 2026
Patent 12567463
THREE-STATE PROGRAMMING OF MEMORY CELLS
2y 5m to grant Granted Mar 03, 2026
Patent 12562225
HYBRID MEMORY FOR NEUROMORPHIC APPLICATIONS
2y 5m to grant Granted Feb 24, 2026
Patent 12548605
INTERFACE CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
2y 5m to grant Granted Feb 10, 2026
Patent 12548606
MULTI-MODE COMPATIBLE ZQ CALIBRATION CIRCUIT IN MEMORY DEVICE
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
83%
Grant Probability
85%
With Interview (+2.2%)
2y 5m
Median Time to Grant
Low
PTA Risk
Based on 760 resolved cases by this examiner. Grant probability derived from career allow rate.

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