Prosecution Insights
Last updated: April 19, 2026
Application No. 18/900,042

Systems And Methods Of Plasma Generation With Microwaves

Non-Final OA §DP
Filed
Sep 27, 2024
Examiner
SATHIRAJU, SRINIVAS
Art Unit
2844
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Rimere LLC
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
2y 2m
To Grant
94%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allow Rate
715 granted / 806 resolved
+20.7% vs TC avg
Moderate +5% lift
Without
With
+5.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
30 currently pending
Career history
836
Total Applications
across all art units

Statute-Specific Performance

§101
2.1%
-37.9% vs TC avg
§103
43.6%
+3.6% vs TC avg
§102
17.6%
-22.4% vs TC avg
§112
16.7%
-23.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 806 resolved cases

Office Action

§DP
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. Claims 1-5, 7--15 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 3, 1 ,1 4, 6, 16-18, 23-28 of U.S. Patent No US12106939 B2 (Hill939). Although the claims at issue are not identical, they are not patentably distinct from each other because they have same author, same subject matter and identical limitations. The variation in limitations are very minimal and it is within the scope of a person with ordinary skill in the art. A comparison list of the claims was given below US 18900042 Application claim is Obvious over US12106939 B2 claim 1. A plasma generator for reforming a feedstock comprising: a first microwave waveguide directed at a first plasma in a reaction zone; and a second microwave waveguide directed at a second plasma in the reaction zone. 1. A plasma generator for reforming a feedstock comprising: a first microwave waveguide directed at a first plasma in a reaction zone; and a second plasma coupled with the first plasma; wherein the first microwave waveguide energizes the first plasma in the reaction zone. 3. The generator of claim 1, further comprising a second microwave waveguide directed at one of the first or the second plasma. 2. The generator of claim 1, wherein the second plasma is coupled with the first plasma. 1. A plasma generator for reforming a feedstock comprising: a first microwave waveguide directed at a first plasma in a reaction zone; and a second plasma coupled with the first plasma; wherein the first microwave waveguide energizes the first plasma in the reaction zone. 3. The generator of claim 1, wherein the second microwave waveguide energizes the second plasma. 1. A plasma generator for reforming a feedstock comprising: a first microwave waveguide directed at a first plasma in a reaction zone; and a second plasma coupled with the first plasma; wherein the first microwave waveguide energizes the first plasma in the reaction zone. 4. The generator of claim 1, wherein the second microwave waveguide is directed at a position in the reaction zone downstream from where the first microwave waveguide is directed. . The generator of claim 3, wherein the second microwave waveguide energizes the first plasma and propagates the first plasma toward the second plasma. 5. The generator of claim 1, wherein the second microwave waveguide further energizes the first plasma. 5. The generator of claim 1, further comprising a second microwave waveguide directed at a plasma between the reaction zone and the second plasma. 6. The generator of claim 5, wherein the second microwave waveguide energizes the first plasma and propagates toward the second plasma. 7. A plasma generator, comprising: an inlet configured to couple with a source of a feedstock stream; a reaction zone disposed downstream of the inlet, the reaction zone enclosing a volume for passthrough of the feedstock; an outlet disposed downstream of the reaction zone to output a reacted species; a microwave waveguide directed between the inlet and the outlet; and a microwave emitter directed at the reaction zone. 16. A plasma generator, comprising: an inlet configured to couple with a source of a feedstock stream; a reaction zone disposed downstream of the inlet, the reaction zone enclosing a volume for passthrough of the feedstock; an outlet disposed downstream of the reaction zone to output a reacted species; a first electrode disposed between the inlet and the outlet; and a microwave emitter directed at the reaction zone. 8. The generator of claim 7, wherein the reaction zone comprises: a first segment receiving the feedstock stream from the inlet; and a plasma in the first segment reacting with the feedstock stream to produce the reacted species; wherein the first segment is configured to convey the reacted species to a second segment of the reaction zone; and wherein the microwave emitter is directed toward the second segment. 17. The generator of claim 16, wherein the reaction zone comprises: a first segment receiving the feedstock stream from the inlet; and a plasma in the first segment reacting with the feedstock stream to produce the reacted species; wherein the first segment is configured to convey the reacted species to a second segment of the reaction zone; and wherein the microwave emitter is directed toward the second segment. 9. The generator of claim 7, wherein the reaction zone comprises an additional segment disposed between the second segment and the outlet. 18. The generator of claim 17, wherein the reaction zone comprises an additional segment disposed between the second segment and the outlet. 10. The generator of claim 7, wherein the microwave emitter is a first microwave emitter and further comprising a second microwave emitter. 23. The generator of claim 16, wherein the microwave emitter is a first microwave emitter and further comprising a second microwave emitter. 11. The generator of claim 10, wherein the second microwave emitter is directed at the reaction zone at a place downstream of where the first microwave emitter is directed at the reaction zone. 24. The generator of claim 23, wherein the second microwave emitter is disposed downstream of the first microwave emitter. 12. The generator of claim 10, wherein the second microwave emitter is arranged in series with the first microwave emitter. 25. The generator of claim 23, wherein the second microwave emitter is arranged in series with the first microwave emitter. 13. The generator of claim 10, wherein the second microwave emitter is arranged in parallel with the first microwave emitter. 26. The generator of claim 23, wherein the second microwave emitter is arranged in parallel with the first microwave emitter. 14. The generator of claim 7, further comprising a filter disposed to interact with the reacted species. 27. The generator of claim 16, further comprising a filter disposed to interact with the reacted species. 15. The generator of claim 14, wherein the filter comprises a porous substrate, a permeable layer, a semi-permeable layer, a selectively permeable layer, or a gradient. 28. The generator of claim 27, wherein the filter comprises a porous substrate, a permeable layer, a semi-permeable layer, a selectively permeable layer, or a gradient. Claim 6 is rejected on the ground of nonstatutory double patenting as being unpatentable over claim 3 of U.S. Patent No.US12106939 B2 in view of US20220392751 A1 by Hill et al(Hill). Referring to claim 6, Hill claim 3 teaches the generator of claim 3, but silent on the generator further comprising a third microwave waveguide directed at a plasma downstream of the first plasma. However, Hill reference teaches a system and method (Fig 1, and Fig 8) further comprising a third microwave waveguide (Fig 8 item 840) directed at a plasma downstream of the first plasma. (See Paragraph [0092]). Hence, it would have been obvious to a person with ordinary skill in the art before the effective filing date of instant application, to incorporate the third microwave in Fig 1 for to delver feed stock to the system. Claims 1-5, 7, 8, 10-15 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 3, 3, 7, 4, 3, 16-18, 23-28 of U.S. Patent No. US11551910 B2 by Hill et al (Hill910). Although the claims at issue are not identical, they are not patentably distinct from each other because they have same author, same subject matter and identical limitations. The variation in limitations are very minimal and it is within the scope of a person with ordinary skill in the art. Claims 6 is rejected on the ground of nonstatutory double patenting as being unpatentable over claim 3 of U.S. Patent No.US12106939 B2 in view of US20220392751 A1 by Hill et al(Hill). Referring to claim 6, Hill claim 3 teaches the generator of claim 3, but silent on wherein the reaction zone comprises an additional segment disposed between the second segment and the outlet. However, Hill reference teaches a system and method (Fig 1, and Fig 8) further comprising a third microwave waveguide (Fig 8 item 840) directed at a plasma downstream of the first plasma. (See Paragraph [0092]). Hence, it would have been obvious to a person with ordinary skill in the art before the effective filing date of instant application, to incorporate the third microwave in Fig 1 for to deliver feed stock to the system. Conclusion Claims 1-15 are rejected. Prior Art: Relevant prior art has been recorded at PTO 892. No prior art rejection was made in view of the specification and prior allowances. Any inquiry concerning this communication or earlier communications from the examiner should be directed to SRINIVAS SATHIRAJU whose telephone number is (571)272-4250. The examiner can normally be reached 8:30AM-5.30 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Regis J Betsch can be reached at 571-270-7101. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SRINIVAS SATHIRAJU/Examiner, Art Unit 2844 12/22/2025
Read full office action

Prosecution Timeline

Sep 27, 2024
Application Filed
Dec 22, 2025
Non-Final Rejection — §DP (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
94%
With Interview (+5.2%)
2y 2m
Median Time to Grant
Low
PTA Risk
Based on 806 resolved cases by this examiner. Grant probability derived from career allow rate.

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