DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 1-6, 11, 13, and 29 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Karasawa et al (US PG Pub # 2015/0288354). The Karasawa reference discloses a semiconductor die (para. # 0032), comprising:
a sensor pad (43);
first sensor circuitry (32) electrically connected to the sensor pad (Fig. 2); and
isolation circuitry (312) coupled between the first sensor circuitry and the sensor pad (para. # 0034 & 0038; pad 43 is selectively used as output of sensor 32).
With respect to claims 2-4, the isolation circuitry (312) connects and disconnects the temperature sensor circuit (Para. # 0038).
With respect to claims 5 & 6, see Figure 2.
With respect to claims 11, 13, & 29, see paragraphs # 0037-0040.
Claim 29 is rejected under 35 U.S.C. 102(a)(1) as being anticipated by Van Brunt et al (US PG Pub # 2022/0140138). Van Brunt discloses a semiconductor die (Fig. 1; para. # 004), comprising:
a first MOSFET (Msense) having a first source pad (20);
a second MOSFET (MD) having a second source pad (16); and
a temperature sensor (Rsense) electrically coupled to the second source pad (Fig. 2A).
Conclusion
Claims 7 and 9-12 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. There is no mention of a “power transistor device” on the semiconductor die of Karasawa. Claims 14-23 are allowable over the art of record for the same reasons.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to RANDY W GIBSON whose telephone number is (571)272-2103. The examiner can normally be reached Tue-Friday 10AM-6PM.
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RANDY W. GIBSON
Primary Examiner
Art Unit 2856
/RANDY W GIBSON/Primary Examiner, Art Unit 2855
