CTNF 18/955,355 CTNF 69748 8DETAILED ACTION Notice of Pre-AIA or AIA Status 07-03-aia AIA 15-10-aia The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. Information Disclosure Statement The information disclosure statement (IDS) submitted on 01/31/25, 11/17/25 and 04/15/26 have been considered by the examiner. Drawings The drawings received on 11/21/24 are acceptable. Double Patenting 08-33 AIA The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg , 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman , 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi , 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum , 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel , 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington , 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA. A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA/25, or PTO/AIA/26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. 08-34 AIA Claim s 1, 4-11, 14, 17-18 and 20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claim s 1-2. 4-6, 8 and 9 of U.S. Patent No. 11,869,794 . Although the claims at issue are not identical, they are not patentably distinct from each other because the patented claim anticipates the examined claim . Present Application No. 18/955,355 US Patent No. 11,869,794 Claim 1. A substrate support for a plasma chamber, comprising: a first layer having a first electrical contact and a second electrical contact; a plurality of heating elements arranged in the first layer; and a plurality of diodes arranged in the first layer and connected to the plurality of heating elements, respectively; wherein each of the plurality of diodes comprises a die arranged in the first layer along a plane, the die comprising a first material having a first coefficient of thermal expansion, the die having a first terminal connected to the first electrical contact and having a second terminal; and wherein each of the plurality of diodes is coupled to a respective conductor, the respective conductor has a first end connected to the second terminal of the die and a second end connected to the second electrical contact, and has a first portion adjacent to the first end that deflects away from the die at an angle relative to the plane towards the second electrical contact. Claim 1. A substrate support for a plasma chamber, comprising: a base plate; a first layer arranged on the base plate, the first layer having a first electrical contact and a second electrical contact and being made of an electrical insulating material; a plurality of heating elements arranged in the first layer; and a plurality of diodes arranged in respective cavities in the first layer, the plurality of diodes connected in series to the plurality of heating elements, respectively; wherein each of the plurality of diodes comprises a die of a semiconductor material arranged in the corresponding cavity, the semiconductor material having a first coefficient of thermal expansion, and the die having a first terminal on a first side of the die and a second terminal on a second side of the die that is opposite to the first side, the first side of the die arranged on the first layer along a plane, the first terminal of the die connected to the first electrical contact; and wherein for each of the plurality of diodes, the corresponding cavity further comprises a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact, and having a first portion adjacent to the first end that deflects away from the second side of the die at an acute angle relative to the plane. Claim 4. The substrate support of claim 1 further comprising a circuit configured to supply power to one of the plurality of heating elements and one of the plurality of diodes connected in series with the one of the plurality of heating elements via the first and second electrical contacts on the first layer. Claim 2. The substrate support of claim 1 further comprising a circuit configured to supply power to one of the plurality of heating elements and one of the plurality of diodes connected in series with the one of the plurality of heating elements via the first and second electrical contacts on the first layer. Claim 5. The substrate support of claim 1 wherein the respective conductor comprises copper, a tungsten-copper alloy, or a tungsten-molybdenum alloy. Claim 4. The substrate support of claim 1 wherein the conductor comprises copper, a tungsten-copper alloy, or a tungsten-molybdenum alloy. Claim 6. The substrate support of claim 1 wherein the die and the respective conductor are encapsulated in silicone or epoxy. Claim 5. The substrate support of claim 1 wherein the die and the conductor are encapsulated in silicone or epoxy. Claim 7. The substrate support of claim 1 wherein the first layer comprises an electrically insulating material including a ceramic material and wherein the first material comprises silicon. Claim 6. The substrate support of claim 1 wherein the electrically insulating material comprises a ceramic material and wherein the semiconductor material comprises silicon. Claim 8. The substrate support of claim 1 wherein a portion of the respective conductor has a serpentine shape or a wavy shape, and wherein the portion terminates at a first distance from the first end of the conductor and at a second distance from the second end from the conductor. Claim 8. The substrate support of claim 1 wherein a portion of the conductor has a serpentine shape or a wavy shape, and wherein the portion terminates at a first distance from the first end of the conductor and at a second distance from the second end from the conductor. Claim 9. A substrate support for a plasma chamber, comprising: a first layer arranged having a first electrical contact and a second electrical contact; a plurality of heating elements arranged in the first layer; and a plurality of diodes arranged in respective cavities in the first layer and connected to the plurality of heating elements, respectively; wherein each of the plurality of diodes comprises a die arranged in the first layer along a plane, the die comprising a first material having a first coefficient of thermal expansion, the die having a first terminal connected to the first electrical contact and having a second terminal; wherein for each of the plurality of diodes, the respective cavity further comprises a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact; and wherein the conductor includes one or more slits extending along a flat section of the conductor, the one or more slits terminating at a first distance from the first end of the conductor and at a second distance from the second end from the conductor. Claim 10. The substrate support of claim 9 wherein the conductor has a first portion adjacent to the first end that deflects away from of the die at an acute angle relative to the plane towards the second electrical contact. Claim 1. A substrate support for a plasma chamber, comprising: a base plate; a first layer arranged on the base plate, the first layer having a first electrical contact and a second electrical contact and being made of an electrical insulating material; a plurality of heating elements arranged in the first layer; and a plurality of diodes arranged in respective cavities in the first layer, the plurality of diodes connected in series to the plurality of heating elements, respectively; wherein each of the plurality of diodes comprises a die of a semiconductor material arranged in the corresponding cavity, the semiconductor material having a first coefficient of thermal expansion, and the die having a first terminal on a first side of the die and a second terminal on a second side of the die that is opposite to the first side, the first side of the die arranged on the first layer along a plane, the first terminal of the die connected to the first electrical contact; and wherein for each of the plurality of diodes, the corresponding cavity further comprises a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact, and having a first portion adjacent to the first end that deflects away from the second side of the die at an acute angle relative to the plane. Claim 2. The substrate support of claim 1 further comprising a circuit configured to supply power to one of the plurality of heating elements and one of the plurality of diodes connected in series with the one of the plurality of heating elements via the first and second electrical contacts on the first layer. Claim 11. An apparatus with an embedded diode design comprising: a layer having a first electrical contact and a second electrical contact located at a distance from the first electrical contact; a die arranged on the layer along a plane, the die comprising a first material having a first coefficient of thermal expansion, having a first terminal connected to the first electrical contact, and having a second terminal; and a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact, and having a first portion adjacent to the first end that deflects away from the die at an angle relative to the plane towards the second electrical contact. Claim 9. An apparatus comprising: a layer having a first electrical contact and a second electrical contact located at a distance from the first electrical contact, the layer being made of an electrically insulating material; a die comprising a semiconductor material having a first coefficient of thermal expansion and having a first terminal on a first side of the die and a second terminal on a second side of the die that is opposite to the first side, the first side of the die arranged on the layer along a plane, the first terminal of the die connected to the first electrical contact; and a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact, and having a first portion adjacent to the first end that deflects away from the second side of the die at an acute angle relative to the plane. Claim 14. The apparatus of claim 11 wherein the conductor comprises copper, a tungsten-copper alloy, or a tungsten-molybdenum alloy. Claim 4. The substrate support of claim 1 wherein the conductor comprises copper, a tungsten-copper alloy, or a tungsten-molybdenum alloy. 17. The apparatus of claim 11 wherein a portion of the conductor has a serpentine shape or a wavy shape, and wherein the portion terminates at a first distance from the first end of the conductor and at a second distance from the second end from the conductor. Claim 8. The substrate support of claim 1 wherein a portion of the conductor has a serpentine shape or a wavy shape, and wherein the portion terminates at a first distance from the first end of the conductor and at a second distance from the second end from the conductor. Claim 18. An apparatus with an embedded diode design comprising: a layer having a first electrical contact and a second electrical contact located at a distance from the first electrical contact; a die arranged on the layer along a plane, the die comprising a first material having a first coefficient of thermal expansion, having a first terminal connected to the first electrical contact, and having a second terminal; and a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact; wherein the conductor includes one or more slits extending along a flat section of the conductor, the one or more slits terminating at a first distance from the first end of the conductor and at a second distance from the second end from the conductor. Claim 9. An apparatus comprising: a layer having a first electrical contact and a second electrical contact located at a distance from the first electrical contact, the layer being made of an electrically insulating material; a die comprising a semiconductor material having a first coefficient of thermal expansion and having a first terminal on a first side of the die and a second terminal on a second side of the die that is opposite to the first side, the first side of the die arranged on the layer along a plane, the first terminal of the die connected to the first electrical contact; and a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact, and having a first portion adjacent to the first end that deflects away from the second side of the die at an acute angle relative to the plane. Claim 20. An apparatus with an embedded diode design comprising: a layer having a first electrical contact and a second electrical contact located at a distance from the first electrical contact; a die arranged on the layer along a plane, the die comprising a first material having a first coefficient of thermal expansion, having a first terminal connected to the first electrical contact, and having a second terminal; and a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact; and a plate arranged between the die and conductor, the plate having a third coefficient of thermal expansion that is between the first and second coefficients of thermal expansion. Claim 9. An apparatus comprising: a layer having a first electrical contact and a second electrical contact located at a distance from the first electrical contact, the layer being made of an electrically insulating material; a die comprising a semiconductor material having a first coefficient of thermal expansion and having a first terminal on a first side of the die and a second terminal on a second side of the die that is opposite to the first side, the first side of the die arranged on the layer along a plane, the first terminal of the die connected to the first electrical contact; and a conductor having a second coefficient of thermal expansion that is greater than the first coefficient of thermal expansion, having a first end connected to the second terminal of the die, having a second end connected to the second electrical contact, and having a first portion adjacent to the first end that deflects away from the second side of the die at an acute angle relative to the plane . Allowable Subject Matter 12-151-08 AIA 07-43 12-51-08 Claim s 2-3, 12-13, 15-16, 19 and 21-24 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion 07-96 AIA The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Tian (US 2025/0351726 A1) discloses a substrate temperature control with integrated thermoelectric cooling system. Tian (US 12,154,814 B2) discloses a long-life extended temperature range embedded diode design for electrostatic chuck with multiplexed heaters array. Any inquiry concerning this communication or earlier communications from the examiner should be directed to ADOLF D BERHANE whose telephone number is (571)272-2077. The examiner can normally be reached 7 AM - 10 PM. 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If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ADOLF D BERHANE/Primary Examiner, Art Unit 2838 Application/Control Number: 18/955,355 Page 2 Art Unit: 2838 Application/Control Number: 18/955,355 Page 3 Art Unit: 2838 Application/Control Number: 18/955,355 Page 4 Art Unit: 2838 Application/Control Number: 18/955,355 Page 5 Art Unit: 2838 Application/Control Number: 18/955,355 Page 6 Art Unit: 2838 Application/Control Number: 18/955,355 Page 7 Art Unit: 2838 Application/Control Number: 18/955,355 Page 8 Art Unit: 2838 Application/Control Number: 18/955,355 Page 9 Art Unit: 2838 Application/Control Number: 18/955,355 Page 10 Art Unit: 2838 Application/Control Number: 18/955,355 Page 11 Art Unit: 2838 Application/Control Number: 18/955,355 Page 12 Art Unit: 2838 Application/Control Number: 18/955,355 Page 13 Art Unit: 2838 Application/Control Number: 18/955,355 Page 14 Art Unit: 2838 Application/Control Number: 18/955,355 Page 15 Art Unit: 2838 Application/Control Number: 18/955,355 Page 16 Art Unit: 2838 Application/Control Number: 18/955,355 Page 17 Art Unit: 2838 Application/Control Number: 18/955,355 Page 18 Art Unit: 2838 Application/Control Number: 18/955,355 Page 19 Art Unit: 2838 Application/Control Number: 18/955,355 Page 20 Art Unit: 2838 Application/Control Number: 18/955,355 Page 21 Art Unit: 2838 Application/Control Number: 18/955,355 Page 22 Art Unit: 2838 Application/Control Number: 18/955,355 Page 23 Art Unit: 2838 Application/Control Number: 18/955,355 Page 24 Art Unit: 2838 Application/Control Number: 18/955,355 Page 25 Art Unit: 2838
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