Prosecution Insights
Last updated: October 02, 2026
Application No. 18/959,357

Monolithic Silicon Photomultiplier Array

Final Rejection §103
Filed
Nov 25, 2024
Priority
Sep 20, 2019 — continuation of 11/145,778 +1 more
Examiner
WILLIAMS, DON J
Art Unit
2878
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Waymo LLC
OA Round
2 (Final)
84%
Grant Probability
Favorable
3-4
OA Rounds
10m
Est. Remaining
89%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allowance Rate
757 granted / 902 resolved
+15.9% vs TC avg
Moderate +5% lift
Without
With
+5.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 8m
Avg Prosecution
11 currently pending
Career history
911
Total Applications
across all art units

Statute-Specific Performance

§101
1.0%
-39.0% vs TC avg
§103
56.7%
+16.7% vs TC avg
§102
33.2%
-6.8% vs TC avg
§112
5.0%
-35.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 902 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 21-22, 25-36, 41 is/are rejected under 35 U.S.C. 103 as being unpatentable over Wang et al (US2012/0223214A1) in view of Tolstikhin et al (WO2011069225A1). As to claim 21, Wang et al disclose (fig. 53) an optical system comprising: a substrate (substrate) having a first surface (upper surface of 2-D array surface, monolithic surface) and a second surface (lower surface of 2-D array of surface, monolithic surface) opposite the first surface (upper surface of 2-D array of surface, monolithic), (paragraph [0375]); a plurality of light-detecting elements (5374) monolithically integrated (monolithically integrated) with the first surface (upper surface of 2-D array of surface, monolithic surface) of the substrate (substrate), wherein each light-detecting element (5374) comprises a plurality of detectors (5374); and a set of optical waveguides (5364), wherein each of the optical waveguides (5364) is configured to couple (coupled) light (multiple wavelengths, optical data) into a respective light- detecting element (5374) of the plurality of light-detecting elements (5374), (paragraph [0376]). Wang et al fail to disclose wherein each of the optical waveguides has a tapered shape and is configured to couple light into a respective light-detecting element of the plurality of light detecting elements. Tolstikhin et al disclose (fig. 5) wherein each of the optical waveguides (515, 525) has a tapered shape (lateral taper, vertical tapers) and is configured to couple light (optical signals, ASE light, wavelengths) into a respective light-detecting element (510, 520) of the plurality of light detecting elements (510, 520), (paragraphs [0070]-[0071]). It would have been obvious to one of ordinary skill in the art before the effective date to modify Wang et al to include wherein each of the optical waveguides has a tapered shape and is configured to couple light into a respective light-detecting element of the plurality of light detecting elements as taught by Tolstikhin et al in order to facilitate smooth and controllable light coupling for the guided optical signal resulting in increased light-receiving efficiency and acquiring the capability of operating at high speed. As to claim 22, Wang et al disclose (fig. 53) the optical system wherein each optical waveguide (5364) extends vertically from the first surface (monolithic surface) of the substrate (substrate), (paragraph [0376]). As to claim 25, Wang et al disclose (fig. 63A, fig. 63B) the optical system wherein each light-detecting element (6304, GE layer) comprises a dielectric stack (6310) over the light- detecting element (6304, GE layer), (paragraphs [0406]-[0411]). As to claim 26, Wang et al disclose (fig. 53) the optical system wherein each light- detecting element (5374) of the plurality of light-detecting elements (5374), (paragraph [0376]). comprises a silicon photomultiplier (SiPM) device (silicon PDs, silicon APDs), (paragraph [0046]). As to claim 27, Wang et al disclose (fig. 16) the optical system wherein each SiPM (MSPD, MSAPD, MS-PD, microstructure photodiode, microstructure avalanche photodiode) comprises a plurality of single photon avalanche diodes (SPADs) (1630), (paragraph [0259]). As to claim 28, Wang et al disclose (fig. 45) the optical system wherein the plurality of light-detecting elements (photodetectors, photosensitive regions) are arranged along the substrate (substrate 4508) in a hexagonal or square array (hexagonal, square), (paragraph [0340]). As to claim 29, Wang et al disclose (fig. 48F) the optical system further comprising: an aperture array (4812) comprising a plurality of apertures (microstructure holes), wherein the plurality of light- detecting elements (4702, microstructure hole photodetectors) and the aperture array (4812) are aligned so as to define a plurality of receiver channels (microstructure holes), wherein each receiver channel (microstructure holes) comprises a respective light-detecting element (4702, microstructure hole photodetectors) of the plurality of light-detecting elements (4702, microstructure hole photodetectors) optically coupled to a respective aperture (microstructure holes) of the plurality of apertures (microstructure holes); and a baffle structure (M1, M2), wherein the baffle structure (M1, M2) comprises a plurality of openings (holes) in an optically opaque material (metal), wherein the baffle structure (M1, M2) is arranged between the aperture array (4812, microstructure holes) and the plurality of light-detecting elements (4702, microstructure hole photodetectors) such that each receiver channel (hole) comprises a respective light-detecting element (4702, microstructure hole photodetector) of the plurality of light- detecting elements (4702, microstructure hole photodetector) optically coupled to a respective aperture (microstructure holes) of the plurality of apertures (microstructure holes) via a respective opening (holes) in the baffle structure (M1, M2), (paragraph [0353]). As to claim 30, Wang et al disclose (62B) the optical system further comprising a thick opaque plate (6205), wherein the thick opaque plate (6205) comprises a plurality of deep holes (6212), and wherein each deep hole (6212) aligns with a respective light-detecting element (microstructure photodetector, (paragraph [0400]). As to claim 31, Wang et al disclose (62B) the optical system further comprising a plurality of electrical conductors (M1, M2), wherein the plurality of electrical conductors (M1, M2) are coupled to the plurality of light-detecting elements (microstructure photodetector) via at least one of: a through substrate (substrate) via (TSV) or a side routing arrangement (electrodes), (paragraph [0400]). As to claim 32, Wang et al disclose (fig. 63A) the optical system further comprising at least one electrical conductor (AN) coupled to the second surface of the substrate (6306), (paragraph [0406]). As to claim 33, Wang et al disclose (fig. 63A) the optical system further comprising at least one isolation trench (6312) in the substrate (6306), wherein the at least one isolation trench (6312) is arranged between neighboring light-detecting elements (6304, microstructure photodiodes), (paragraph [0406]). As to claim 34, Wang et al disclose (fig. 63A) the optical system wherein the at least one isolation trench (6312) is at least partially filled with at least one of: a non-conductive material (6310), (paragraph [0406]). As to claim 35, Wang et al disclose (fig. 63A) the optical system wherein the at least one isolation trench (6312) provides electrical isolation or optical isolation between the neighboring light-detecting elements (6304, Ge, microstructure photodiodes), (paragraph [0406]). As to claim 36, Wang et al disclose (fig. 63B) the optical system further comprising a reflective grid (6302) patterned along a top surface of each light-detecting element (6304, Ge, microstructure photodiodes), wherein the reflective grid (6302) optically isolates the light- detecting element (6304, Ge, microstructure photodiodes) from neighboring light-detecting elements (6304, Ge, microstructure photodiodes), (paragraph [0407]). As to claim 41, Wang et al disclose (fig. 53) the optical system wherein the optical waveguides (5364) extend vertically from the first surface of the substrate (substrate), (paragraph [0376]). Wang et al fail to disclose wherein the tapered shape of each of the optical waveguides is such that each of the optical waveguides becomes narrower. Tolstikhin et al disclose (fig. 5) wherein the tapered shape (lateral taper, vertical tapers) of each of the optical waveguides is such that each of the optical waveguides becomes narrower, (paragraphs [0070]). It would have been obvious to one of ordinary skill in the art before the effective filing date to modify Wang et al to include wherein the tapered shape of each of the optical waveguides is such that each of the optical waveguides becomes narrower as taught by Tolstikhin et al in order to facilitate smooth and controllable light coupling for the guided optical signal resulting in increased light-receiving efficiency and acquiring the capability of operating at high speed. Claim(s) 37-40 is/are rejected under 35 U.S.C. 103 as being unpatentable over Wang et al (US2012/0223214A1) in view of Wang et al (US20180102442A1). As to claim 37, Wang et al (US2012/0223214A1) disclose (fig. 19A) a device comprising: a series of optical substrates (array chip), wherein each optical substrate (array chip) comprises: a plurality of light- detecting elements (1630) monolithically integrated (monolithically integrated) with the optical substrate (silicon chip), wherein each light-detecting element (1630) fills a respective circular area on the optical substrate (silicon chip), wherein each light-detecting element (1630) comprises a plurality of detectors (1630), and wherein each light-detecting element (1630) is arranged in a hexagonal or square array (hexagonal, square) on the substrate (1910); and an isolation component (1916) configured to optically isolate or electrically isolate each light- detecting element (1630) from neighboring light-detecting elements (1630), (paragraph [0274]). Wang et al (US2012/0223214A1) fail to disclose an isolation component configured to optically isolate or electrically isolate each light-detecting element from neighboring light-detecting element. Wang et al (US20180102442A1) disclose an isolation component (5860) configured to optically isolate or electrically isolate (optical and/or electrical isolation), (paragraph [0388]) each light-detecting element (Si photodiodes) from neighboring light-detecting element (Si photodiodes), (paragraph [0390]). It would have been obvious to one of ordinary skill in the art before the effective filing date to modify Wang et al (US2012/0223214A1) to include an isolation component configured to optically isolate or electrically isolate each light-detecting element from neighboring light-detecting element as taught by Wang et al (US20180102442A1) in order to avoid light interference and/or crosstalk between the light detecting elements. As to claim 38, Wang et al (US2012/0223214A1) disclose (fig. 66) the device wherein the isolation component (6660) comprises an at least one isolation trench (6660, trench) in the substrate (substrate), wherein the at least one isolation trench (6660, trench) is arranged between neighboring light- detecting elements (6650), (paragraph [0426]). As to claim 39, Wang et al (US2012/0223214A1) (fig. 53) the device wherein each optical substrate (substrate) further comprises a set of optical waveguides (5364), wherein each of the optical waveguides (5364) is configured to couple (coupled) light (multiple wavelengths) into a respective light-detecting element (5374) of the plurality of light-detecting elements (5374), (paragraph [0376]). As to claim 40, Wang et al disclose (US2012/0223214A1) (fig. 48F) the optical system further comprising: an aperture array (4812) comprising a plurality of apertures (microstructure holes), wherein the plurality of light- detecting elements (4702, microstructure hole photodetectors) and the aperture array (4812) are aligned so as to define a plurality of receiver channels (microstructure holes), wherein each receiver channel (microstructure holes) comprises a respective light-detecting element (4702, microstructure hole photodetectors) of the plurality of light-detecting elements (4702, microstructure hole photodetectors) optically coupled to a respective aperture (microstructure holes) of the plurality of apertures (microstructure holes); and a baffle structure (M1, M2), wherein the baffle structure (M1, M2) comprises a plurality of openings (holes) in an optically opaque material (metal), wherein the baffle structure (M1, M2) is arranged between the aperture array (4812, microstructure holes) and the plurality of light-detecting elements (4702, microstructure hole photodetectors) such that each receiver channel (hole) comprises a respective light-detecting element (4702, microstructure hole photodetector) of the plurality of light- detecting elements (4702, microstructure hole photodetector) optically coupled to a respective aperture (microstructure holes) of the plurality of apertures (microstructure holes) via a respective opening (holes) in the baffle structure (M1, M2), (paragraph [0353]). Claim(s) 42 is/are rejected under 35 U.S.C. 103 as being unpatentable over Wang et al (US2012/0223214A1) in view of Wang et al (US20180102442A1) and further in view of Tolstikhin et al (WO2011069225A1). As to claim 42, Wang et al (US2012/0223214A1) disclose (fig. 48F) the device wherein each of the optical waveguides (5364), (paragraph [0376]). Wang et al (US2012/0223214A1) in view of Wang et al (US20180102442A1) fail to disclose wherein each of the optical waveguides has a tapered shape. Tolstikhin et al disclose (fig. 5) wherein each of the optical waveguides (515, 525) has a tapered shape (lateral taper, vertical tapers), (paragraphs [0070]-[0071]). It would have been obvious to one of ordinary skill in the art before the effective date to modify Wang et al (US2012/0223214A1) in view of Wang et al (US20180102442A1) to include wherein each of the optical waveguides has a tapered shape as taught by Tolstikhin et al in order to facilitate smooth and controllable light coupling for the guided optical signal resulting in increased light-receiving efficiency and acquiring the capability of operating at high speed. Response to Arguments Applicants’ arguments, see Remarks, filed 06/03/2026, with respect to the rejection(s) of claim(s) 21-22, 23-40 have been fully considered and are persuasive. However, upon further consideration, a new ground(s) of rejection is made. Claim 42 newly added. Conclusion Applicants’ amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicants are reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for replying to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to DON J WILLIAMS whose telephone number is (571)272-8538. The examiner can normally be reached M-F 8 a.m.-5 p.m.. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Georgia Epps can be reached at 571-272-2328. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DON J WILLIAMS/Examiner, Art Unit 2878 /GEORGIA Y EPPS/Supervisory Patent Examiner, Art Unit 2878
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Prosecution Timeline

Nov 25, 2024
Application Filed
Apr 22, 2026
Non-Final Rejection mailed — §103
Jun 03, 2026
Response Filed
Sep 01, 2026
Final Rejection mailed — §103 (current)

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Prosecution Projections

3-4
Expected OA Rounds
84%
Grant Probability
89%
With Interview (+5.1%)
2y 8m (~10m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 902 resolved cases by this examiner. Grant probability derived from career allowance rate.

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