Prosecution Insights
Last updated: July 17, 2026
Application No. 19/018,307

NONVOLATILE SEMICONDUCTOR MEMORY

Non-Final OA §DP
Filed
Jan 13, 2025
Priority
Jun 19, 2019 — JP 2019-113565 +3 more
Examiner
BASHAR, MOHAMMED A
Art Unit
Tech Center
Assignee
KIOXIA Corporation
OA Round
1 (Non-Final)
95%
Grant Probability
Favorable
1-2
OA Rounds
3m
Est. Remaining
98%
With Interview

Examiner Intelligence

Grants 95% — above average
95%
Career Allowance Rate
625 granted / 658 resolved
+35.0% vs TC avg
Minimal +3% lift
Without
With
+3.3%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 9m
Avg Prosecution
16 currently pending
Career history
684
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
77.8%
+37.8% vs TC avg
§102
6.9%
-33.1% vs TC avg
§112
2.7%
-37.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 658 resolved cases

Office Action

§DP
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . DETAILED ACTION Information Disclosure Statement Acknowledgment is made of Applicant’s Information Disclosure Statement (IDS) form PTO-1449. These IDS has been considered. Foreign Priority Acknowledgment is made of applicant's claim for foreign priority under 35 U.S.C. 119(a)-(d). The certified copy has been placed in the file of record. Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the claims at issue are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); and In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on a nonstatutory double patenting ground provided the reference application or patent either is shown to be commonly owned with this application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP §§ 706.02(l)(1) - 706.02(l)(3) for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/forms/. The filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to http://www.uspto.gov/patents/process/file/efs/guidance/eTD-info-I.jsp. Claims 1-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claim 1-26 of U.S. Patent No. 9728245. . Current Application # 19018307 US Pat # 12229447 For example: Claim 1: 1. A nonvolatile semiconductor memory, comprising: a first memory string; a first interconnect coupled to one end of the first memory string; a second interconnect coupled to another end of the first memory string; a first circuit configured to control the first interconnect in accordance with first data; and a second circuit coupled to the second interconnect, the second circuit including a current mirror circuit, and the second circuit being configured to output second data based on an amount of a current flowing through the second interconnect. For example: Claim 1: A nonvolatile semiconductor memory comprising: a plurality of memory cells; a plurality of bit lines connected to the plurality of memory cells; a first circuit configured to control the plurality of bit lines according to first data; a source line commonly connected to first ends of the plurality of bit lines; and a second circuit connected to the source line and configured to detect second data according to a current amount in the source line, wherein: the second circuit includes a third circuit and a fourth circuit, the third circuit is configured to compare a first voltage with a second voltage, the first voltage being a reference voltage, and the second voltage being a voltage of the source line based on the current amount in the source line, and the fourth circuit is configured to digitally convert the current amount in the source line. 7. The nonvolatile semiconductor memory according to claim 6, wherein the fourth circuit further includes: a sixth transistor having a first end connected to the power supply voltage and a second end connected to a gate of the sixth transistor; a seventh transistor having a first end connected to the power supply voltage and configured as a current mirror with the sixth transistor; Even though the claims at issue are not identical but overall scope of the claims are identical and they are not patentably distinct from each other. For example, the above limitation “the second circuit including a current mirror circuit” in current application 19018307 and the limitation “configured as a current mirror with the sixth transistor” in US Pat # 12229447 are not identical but they are not patentably distinct from each other. Because, current mirror is in the fourth circuits which includes second circuits. Claims 1-20 would be allowable if the double patenting rejection set forth in this office action is overcome. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. See attachment. Any inquiry concerning this communication or earlier communications from the examiner should be directed to whose telephone number is 469-295-9277. The examiner can normally be reached on 9am-5pm. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Richard T Elms can be reached on 5712721869. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MOHAMMED A BASHAR/Primary Examiner, Art Unit 2824
Read full office action

Prosecution Timeline

Jan 13, 2025
Application Filed
Jun 17, 2026
Non-Final Rejection mailed — §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12682975
STORAGE DEVICE FOR SUPPORTING DYNAMIC ALLOCATION OF MEMORY AND METHOD OF OPERATING THE SAME
2y 9m to grant Granted Jul 14, 2026
Patent 12682973
Scannable Memory Subsystem
2y 0m to grant Granted Jul 14, 2026
Patent 12670967
APPARATUSES AND METHODS FOR TESTING MEMORY DEVICES
2y 3m to grant Granted Jun 30, 2026
Patent 12664108
MEMORY DEVICES WITH MULTIPLE PSEUDO-CHANNELS
3y 6m to grant Granted Jun 23, 2026
Patent 12665014
METHODS FOR CONTROLLING BIT LINE VOLTAGES IN MEMORY DEVICES
3y 0m to grant Granted Jun 23, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
95%
Grant Probability
98%
With Interview (+3.3%)
1y 9m (~3m remaining)
Median Time to Grant
Low
PTA Risk
Based on 658 resolved cases by this examiner. Grant probability derived from career allowance rate.

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