Tech Center 2800 • Art Units: 1681 2824
This examiner grants 95% of resolved cases
Mohammed A. Bashar is an examiner in Tech Center 2800, working within Art Unit 1681. He has a volume of 673 resolved cases, which provides a reliable data set for analysis. His allowance rate is 95.1 percent, suggesting a favorable environment for patent applicants. Furthermore, the median time to allowance is 666 days, which is efficient compared to many other examiners.
The interview lift for Bashar is 3.3 percent. While this is a positive increase, the baseline allowance rate of 95.1 percent is already high enough that the impact of an interview is statistically marginal. With 673 resolved cases to his credit, the 666 days median pendency is a well-supported figure for planning purposes. Applicants in Art Unit 1681 can expect a high probability of success and a relatively quick path to allowance. The 3.3 percent lift suggests that while interviews are not strictly necessary, they still provide a slight benefit in the prosecution process.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19024056 | MAGNETIC MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19008118 | SEMICONDUCTOR MEMORY DEVICE, OPERATING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18938612 | MEMORY SYSTEM AND METHOD FOR TESTING MEMORY SYSTEM | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18934509 | A SWITCHING CONVERTER TO REDUCE OVERSHOOTING IN OUTPUT VOLTAGE AND METHOD THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18928313 | VOLTAGE CONVERTER, MEMORY MODULE INCLUDING VOLTAGE CONVERTER, AND OPERATING METHOD OF VOLTAGE CONVERTER | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18503719 | MEMORY DEVICE AND OPERATING METHOD OF THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18237787 | Threshold Voltage Reduction in Memristive Devices | Non-Final OA | International Business Machines Corporation |
| 17961181 | Electronic Circuit and Method of Operating an Electronic Circuit | Non-Final OA | Infineon Technologies AG |
| 18963759 | MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME | Non-Final OA | SK hynix Inc. |
| 18675833 | MEMORY DEVICES CONFIGURED TO PERFORM READ OPERATIONS FOR PSEUDO CHANNELS | Final Rejection | SK hynix Inc. |
| 18675660 | SEMICONDUCTOR CHIP THAT ADJUSTS STROBE SIGNAL DELAY | Non-Final OA | SK hynix Inc. |
| 19041462 | MEMORY SYSTEM | Non-Final OA | Kioxia Corporation |
| 19057711 | STANDBY EXIT FOR MEMORY DIE STACK | Non-Final OA | Micron Technology, Inc. |
| 19039241 | REFRESH DETERMINATION USING MEMORY CELL PATTERNS | Non-Final OA | Micron Technology, Inc. |
| 18763395 | SELECTION CIRCUITRY | Final Rejection | Micron Technology, Inc. |
| 18982906 | RECYCLE CURRENT DURING SENSE OF MEMORY CELLS | Non-Final OA | Sandisk Technologies, Inc. |
| 18978514 | MULTI-PASS PROGRAMMING TECHNIQUES FOR MEMORY DEVICES | Non-Final OA | Sandisk Technologies, Inc. |
| 18887730 | TECHNIQUE TO DETECT AN UNSELECTED SUB-BLOCK STATUS IN A MEMORY DEVICE | Final Rejection | Sandisk Technologies, Inc. |
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