Tech Center 2800 • Art Units: 1681 2824
This examiner grants 95% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19024056 | MAGNETIC MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19008118 | SEMICONDUCTOR MEMORY DEVICE, OPERATING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18938612 | MEMORY SYSTEM AND METHOD FOR TESTING MEMORY SYSTEM | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18934509 | A SWITCHING CONVERTER TO REDUCE OVERSHOOTING IN OUTPUT VOLTAGE AND METHOD THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18928313 | VOLTAGE CONVERTER, MEMORY MODULE INCLUDING VOLTAGE CONVERTER, AND OPERATING METHOD OF VOLTAGE CONVERTER | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18927193 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18503719 | MEMORY DEVICE AND OPERATING METHOD OF THEREOF | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18940257 | Voltage Control in Memory Devices | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18970723 | MEMORY AND OPERATION METHOD THEREOF | Non-Final OA | SK hynix Inc. |
| 18675660 | SEMICONDUCTOR CHIP THAT ADJUSTS STROBE SIGNAL DELAY | Final Rejection | SK hynix Inc. |
| 19039241 | REFRESH DETERMINATION USING MEMORY CELL PATTERNS | Non-Final OA | Micron Technology, Inc. |
| 19018307 | NONVOLATILE SEMICONDUCTOR MEMORY | Non-Final OA | Kioxia Corporation |
| 17961181 | Electronic Circuit and Method of Operating an Electronic Circuit | Non-Final OA | Infineon Technologies AG |
| 18978514 | MULTI-PASS PROGRAMMING TECHNIQUES FOR MEMORY DEVICES | Non-Final OA | Sandisk Technologies, Inc. |
| 18237787 | Threshold Voltage Reduction in Memristive Devices | Non-Final OA | International Business Machines Corporation |
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