UNITED STATES PATENT AND TRADEMARK OFFICE
UNITED STATES DEPARTMENT OF COMMERCE
United States Patent and Trademark Office
Address: COMMISSIONER FOR PATENTS
P.O. Box 1450
Alexandria, Virginia 22313-1450
www.uspto.gov
APPLICATION NO.
19/037,542
100926
7590
FILING DATE
01/27/2025
06/08/2026
LOWENSTEIN SANDLER LLP / AMAT
Patent Docket Administrator
1 Lowenstein Drive
Roseland, NJ 07068
FIRST NAMED INVENTOR
Vladimir Nagorny
ATTORNEY DOCKET NO.
36119.2507 (L0925C)
CONFIRMATION NO.
3207
ART UNIT
2117
EXAMINER
CHOI, ALICIA M
PAPER NUMBER
NOTIFICATION DATE
DELIVERY MODE
06/08/2026
ELECTRONIC
Please find below and/or attached an Office communication concerning this application or proceeding.
The time period for reply, if any, is set in the attached communication.
Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the
following e-mail address(es):
Applied_Materials.Pair@anaqua.com
patents@lowenstein.com
PTOL-90A (Rev. 04/07)
Office Action Summary
Application No.
19/037,542
Examiner
Alicia M Choi
Applicant(s)
Nagorny et al.
Art Unit
2117
AIA (First Inventor to
File) Status Yes
The MAILING DATE of this communication appears on the cover sheet with the correspondence address --
Period for Reply
A SHORTENED STATUTORY PERIOD FOR REPLY IS SET TO EXPIRE 3 MONTHS FROM THE MAILING
DATE OF THIS COMMUNICATION.
Extensions of time may be available under the provisions of 37 CFR 1.136(a). In no event, however, may a reply be timely filed after SIX (6) MONTHS from the mailing
date of this communication.
If NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHS from the mailing date of this communication.
Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133).
Any reply received by the Office later than three months after the mailing date of this communication, even if timely filed, may reduce any earned patent term
adjustment. See 37 CFR 1.704(b).
Status
1) Responsive to communication(s) filed on 11 September 2025.
2a)
3)
A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/were filed on
This action is FINAL.
2b) This action is non-final.
An election was made by the applicant in response to a restriction requirement set forth during the interview
on; the restriction requirement and election have been incorporated into this action.
4) Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
closed in accordance with the practice under Ex parte Quayle, 1935 C.D. 11, 453 O.G. 213.
Disposition of Claims*
5) Claim(s)
1-20 is/are pending in the application.
5a) Of the above claim(s)
is/are withdrawn from consideration.
6) Claim(s) 1-10 is/are allowed.
7) Claim(s) 11-20 is/are rejected.
8) Claim(s) is/are objected to.
9) Claim(s) are subject to restriction and/or election requirement
* If any claims have been determined allowable, you may be eligible to benefit from the Patent Prosecution Highway program at a
participating intellectual property office for the corresponding application. For more information, please see
http://www.uspto.gov/patents/init_events/pph/index.jsp or send an inquiry to PPHfeedback@uspto.gov.
Application Papers
10) The specification is objected to by the Examiner.
11) The drawing(s) filed on 27 January 2025 is/are: a)☑ accepted or b)☐ objected to by the Examiner.
Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121(d).
Priority under 35 U.S.C. § 119
12) Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d) or (f).
Certified copies:
a) All b) Some** c) None of the:
1. Certified copies of the priority documents have been received.
2. Certified copies of the priority documents have been received in Application No.
3. Copies of the certified copies of the priority documents have been received in this National Stage
application from the International Bureau (PCT Rule 17.2(a)).
** See the attached detailed Office action for a list of the certified copies not received.
Attachment(s)
1) Notice of References Cited (PTO-892)
2) Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
Paper No(s)/Mail Date 09/11/2025.
U.S. Patent and Trademark Office
PTOL-326 (Rev. 11-13)
Office Action Summary
3) Interview Summary (PTO-413)
Paper No(s)/Mail Date
Other:
Part of Paper No./Mail Date 20260421
Application/Control Number: 19/037,542
Art Unit: 2117
Page 2
Notice of Pre-AIA or AIA Status
1. The present application, filed on or after March 16, 2013, is being examined under the
first inventor to file provisions of the AIA.
2. Claims 1-20 are currently pending, of which claims 1, 13, and 20 are independent claims.
Information Disclosure Statement
3. The information disclosure statement (IDS) submitted on September 11, 2025 has been
considered by the examiner.
Priority
4. This application is a CON of US Patent Application No.17/382,332 filed on July 21,
2021, now Patent No. 12,211,677.
Double Patenting
5. The nonstatutory double patenting rejection is based on a judicially created doctrine
grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or
improper timewise extension of the "right to exclude" granted by a patent and to prevent possible
harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where
the conflicting claims are not identical, but at least one examined application claim is not
patentably distinct from the reference claim(s) because the examined application claim is either
anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg,
140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d
2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van
Application/Control Number: 19/037,542
Art Unit: 2117
Page 3
Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619
(CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may
be used to overcome an actual or provisional rejection based on nonstatutory double patenting
provided the reference application or patent either is shown to be commonly owned with the
examined application, or claims an invention made as a result of activities undertaken within the
scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination
under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP §
2146 et seq. for applications not subject to examination under the first inventor to file provisions
of the AIA. A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b).
The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory
double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be
accompanied by a reply requesting reconsideration of the prior Office action. Even where the
NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1.
For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action,
see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c)
may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13.
The USPTO Internet website contains terminal disclaimer forms which may be used.
Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in
which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA/25, or
PTO/AIA/26) should be used. A web-based eTerminal Disclaimer may be filled out completely
online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-
Application/Control Number: 19/037,542
Art Unit: 2117
Page 4
processed and approved immediately upon submission. For more information about eTerminal
Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer.
6. Claims 11-20 are provisionally rejected on the ground of nonstatutory double patenting
as being unpatentable over 1-6 and 17-20 of U.S. Patent No. 12,211,677 B2 to Nagorny et al.
(US Patent Application No. 17/382,332) in view of Wu et al. (US Patent Publication No.
2023/0154728 A1) (“Wu”) [Submitted in IDS filed on September 11, 2025]. Although the
claims at issue are not identical, they are not patentably distinct from each other because the
claims of U.S. Patent No. 12,211,677 B2 in view of Wu recite very similar structure and
functionality.
Present US Patent Application No.
19/037,542
Claim 11
A non-transitory machine-readable storage
medium storing instructions which, when
executed, cause a processing device to
perform operations comprising:
obtaining data indicative of one or more
plasma exposure durations of a plasma
process, wherein each of the one or more
plasma exposure durations is associated with
a plurality of controlled elements;
causing, by the processing device, a first
plurality of controlled elements to switch
between a first mode of operation and a
second mode of operation, the first plurality
of controlled elements to expose a first
U.S. Patent No. 12,211,677 B2
Claim 1
A method, comprising:
receiving, by a processing device, data
indicative of one or more plasma exposure
durations of a plasma process, wherein each
of the one or more plasma exposure durations
is associated with a plurality of controlled
elements;
causing, by the processing device, a first
plurality of controlled elements to switch
between a first mode of operation and a
second mode of operation, the first plurality
of controlled elements to expose a first
portion of a substrate to plasma related fluxes, portion of a substrate to plasma related fluxes,
wherein the first plurality of controlled
elements process the substrate at an increased
rate while operating in the first mode of
operation relative to the second mode of
operation;
wherein the first plurality of controlled
elements process the substrate at an increased
rate while operating in the first mode of
operation relative to the second mode of
operation;
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Present US Patent Application No.
19/037,542
causing a second plurality of controlled
elements to switch between the first mode of
operation and the second mode of operation;
and
causing, by the processing device, the first
plurality of controlled elements to operate in
the first mode of operation for a first time
duration based on the data and the second
plurality of controlled elements to operate in
the second mode of operation for a second
time duration based on the data,
wherein the first plurality of controlled
elements operate in the first mode of
operation at least partially simultaneously to
the second plurality of controlled elements
operating in the second mode of operation
during a first time period.
Claim 12
The non-transitory machine-readable storage
medium of claim 11,
wherein the second plurality of controlled
elements to expose a second portion of the
U.S. Patent No. 12,211,677 B2
causing a second plurality of controlled
elements to switch between the first mode of
operation and the second mode of operation;
and
causing, by the processing device, the first
plurality of controlled elements to operate in
the first mode of operation for a first time
duration based on the data and the second
plurality of controlled elements to operate in
the second mode of operation for a second
time duration based on the data,
wherein the first plurality of controlled
elements operate in the first mode of
operation at least partially simultaneously to
the second plurality of controlled elements
operating in the second mode of operation
during a first time period.
Claim 2
The method of claim 1,
wherein the second plurality of controlled
elements to expose a second portion of the
substrate to plasma related fluxes, wherein the substrate to plasma related fluxes, wherein the
second plurality of controlled elements
process the substrate at an increased rate
while operating in the first mode of operation
relative to the second mode of operation.
Claim 13
The non-transitory machine-readable storage
medium of claim 12, wherein the first
plurality of controlled elements are disposed
within a first area of a control panel and the
second plurality of controlled elements are
disposed within a second area of the control
panel, wherein the first area is surrounded by
the second area.
Claim 14
The non-transitory machine-readable storage
medium of claim 12, wherein the first
second plurality of controlled elements
process the substrate at an increased rate
while operating in the first mode of operation
relative to the second mode of operation.
Claim 3
The method of claim 2, wherein the first
plurality of controlled elements are disposed
within a first area of a control panel and the
second plurality of controlled elements are
disposed within a second area of the control
panel, wherein the first area is surrounded by
the second area.
Claim 4
The method of claim 2, wherein the first
plurality of controlled elements operate in the
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Present US Patent Application No.
19/037,542
plurality of controlled elements operate in the
first mode of operation at least partially
simultaneous to the second plurality of
controlled elements operating in the first
mode of operation during a second time
period, different than the first time period.
Claim 15
The non-transitory machine-readable storage
medium of claim 11, wherein the processing
device is coupled to a power supply and the
controlled elements comprise one or more
plasma sources configured to receive power
from the power supply and generate the
plasma related fluxes.
Claim 16
The non-transitory machine-readable storage
medium of claim 15, wherein the processing
device is coupled to matching circuitry, the
matching circuitry is to maintain a first
voltage level across the one or more plasma
sources when the first plurality of controlled
elements operates in the first mode of
operation and is to maintain a second voltage
level, lower than the first voltage level, across
the one or more plasma sources when the first
plurality of controlled elements operates in
the second mode of operation.
Claim 17
A non-transitory machine-readable storage
medium storing instruction which, when
executed, cause a processing device to
perform operations comprising:
obtaining data indicative of one or more
plasma exposure durations each associated
with a plurality of controlled elements
configured to expose a substrate to plasma
related fluxes associated with a plasma
process;
receiving, by the processing device, a first
thickness profile of the substrate, the first
thickness profile comprising a first plurality
of process result thickness values of the
U.S. Patent No. 12,211,677 B2
Claim 5
simultaneous to the second plurality of
controlled elements operating in the first
mode of operation during a second time
period, different than the first time period.
The method of claim 1, wherein the
processing device is coupled to a power
supply and the controlled elements comprise
one or more plasma sources configured to
receive power from the power supply and
generate the plasma related fluxes.
Claim 6
The method of claim 5, wherein the
processing device is coupled to matching
circuitry, the matching circuitry is to maintain
a first voltage level across the one or more
plasma sources when the first plurality of
controlled elements operates in the first mode
of operation and is to maintain a second
voltage level, lower than the first voltage
level, across the one or more plasma sources
when the first plurality of controlled elements
operates in the second mode of operation.
Claim 17
A method, comprising:
receiving, by a processing device, data
indicative of one or more plasma exposure
durations each associated with a plurality of
controlled elements configured to expose a
substrate to plasma related fluxes associated
with a plasma process;
receiving, by the processing device, a first
thickness profile of the substrate, the first
thickness profile comprising a first plurality
of process result thickness values of the
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Present US Patent Application No.
19/037,542
substrate measured after exposing the
substrate to the plasma related fluxes
associated with a first plurality of controlled
elements operating in a first mode of
operation for a first plasma exposure duration;
determining, by the processing device, a first
plurality of substrate processing rates
associated with one of more locations across a
surface of the substrate corresponding to the
plurality of controlled elements operating in
the first mode of operation; and
responsive to determining the first plurality of
substrate processing rates, modifying, by the
processing device, the data by changing one
of the one or more plasma exposure durations.
Claim 18
The non-transitory machine-readable storage
medium of claim 17, wherein the operations
further comprise:
obtaining a second thickness profile of the
substrate, the second thickness profile
comprising a second plurality of process
result thickness values of the substrate
measured after exposing the substrate to the
plasma related fluxes associated with a first
plurality of controlled elements operating in a
second mode of operation for a second plasma
exposure duration, wherein the first plurality
of controlled elements process the substrate at
an increased rate while operating in the first
mode of operation relative to the second mode
of operation;
determining a second plurality of substrate
processing rates associated with the one or
more locations across the surface of the
substrate corresponding to the plurality of
controlled elements operating in the second
mode of operation, wherein the data is
modified further responsive to determining
the second plurality of substrate processing
rates.
U.S. Patent No. 12,211,677 B2
substrate measured after exposing the
plasma related fluxes associated with a first
plurality of controlled elements operating in a
first mode of operation for a first plasma exposure duration;
determining, by the processing device, a first
plurality of substrate processing rates
associated with one of more locations across a
surface of the substrate corresponding to the
plurality of controlled elements operating in
the first mode of operation; and
responsive to determining the first plurality of
substrate processing rates, modifying, by the
processing device, the data by changing one
of the one or more plasma exposure durations.
Claim 18
The method of claim 17, further comprising:
receiving, by the processing device, a second
thickness profile of the substrate, the second
thickness profile comprising a second
plurality of process result thickness values of
the substrate measured after exposing the
substrate to the plasma related fluxes
associated with a first plurality of controlled
elements operating in a second mode of
operation for a second plasma exposure
duration, wherein the first plurality of
controlled elements process the substrate at an
increased rate while operating in the first
mode of operation relative to the second mode
of operation;
determining a second plurality of substrate
processing rates associated with the one or
more locations across the surface of the
substrate corresponding to the plurality of
controlled elements operating in the second
mode of operation, wherein the data is
modified further responsive to determining
the second plurality of substrate processing
rates.
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Present US Patent Application No.
19/037,542
Claim 19
The non-transitory machine-readable storage
medium of claim 17, wherein the operations
further comprise:
obtaining a third thickness profile of the
substrate, the third thickness profile
comprising a third plurality of process result
thickness values of the substrate measured
after exposing the substrate to the plasma
related fluxes associated with a second
plurality of controlled elements operating in
the first mode for a third plasma exposure
duration; and
determining a third plurality of substrate
processing rates associated with the one or
more locations across the surface of the
substrate corresponding to the second
plurality of controlled elements operating in
the first mode, wherein the data is modified
further responsive to determining the third
plurality of substrate processing rates.
Claim 20
The non-transitory machine-readable storage
medium of claim 17, wherein the operations
further comprise:
U.S. Patent No. 12,211,677 B2
Claim 19
The method of claim 17, further comprising:
receiving, by the processing device, a third
thickness profile of the substrate, the third
thickness profile comprising a third plurality
of process result thickness values of the
substrate measured after exposing the
substrate to the plasma related fluxes
associated with a second plurality of
controlled elements operating in the first
mode for a third plasma exposure duration;
and
determining, by the processing device, a third
plurality of substrate processing rates
associated with the one or more locations
across the surface of the substrate
corresponding to the second plurality of
controlled elements operating in the first
mode, wherein the data is modified further
responsive to determining the third plurality
of substrate processing rates.
Claim 20
The method of claim 17, further comprising:
using the data and the first thickness profile as using the data and the first thickness profile as
input to a machine learning model; and
obtaining one or more outputs of the machine
learning model, the one or more outputs
indicating a modification to the one or more
plasma exposure durations.
input to a machine learning model; and
obtaining one or more outputs of the machine
learning model, the one or more outputs
indicating a modification to the one or more
plasma exposure durations.
Compared to the claims of US Patent No. 12,211,677 B2, independent claims 11 and 17
of the instant application include the additional limitations of “A non-transitory machine-
readable storage medium storing instructions which, when executed, cause a processing device to
perform operations". However, Wu describes a tool changer. Wu teaches:
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Page 9
A non-transitory machine-readable storage medium storing instructions which,
when executed, cause a processing device to perform operations comprising:... Wu:
Paragraph [0094] “Various embodiments described herein can be implemented through process
control instructions instantiated as computer-readable code on a non-transitory computer-
readable medium. The non-transitory computer-readable medium is any data storage hardware
unit that can store data, which can be thereafter be read by a computer system. Examples of the
non-transitory computer-readable medium include hard drives, network attached storage (NAS),
ROM, RAM, compact disc-ROMs (CD-ROMs), CD-recordables (CD-Rs), CD-rewritables (CD-
RWs), magnetic tapes, and other optical and non-optical data storage hardware units. The non-
transitory computer-readable medium can include computer-readable tangible medium
distributed over a network-coupled computer system so that the computer-readable code is stored
and executed in a distributed fashion." ') )
Accordingly, it would have been obvious to one of ordinary skill in the art before the
effective filing date of the claimed invention, having the teachings of US Patent No. 12,144,574
B2 and Wu before them, to include a non-transitory machine-readable storage medium storing
instructions which, when executed, cause a processing device to perform operations because the
references are in the same field of endeavor as the claimed invention and they are focused on
semiconductor etching.
One of ordinary skill in the art before the effective filing date of the claimed invention
would have been motivated to do this modification because it would provide an alternative
implementation of including the functions of independent claims 11 and 17 of the present
application to be instantiated as computer-readable code on a non-transitory computer-readable
medium. Wu Paragraph [0094]
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Page 10
In view of the foregoing, claims 11-20 of the instant application are rejected on the
grounds of nonstatutory double patenting.
Relevant Art Cited by Examiner and Allowable Subject Matter over Prior Art
Provided that the nonstatutory double patenting is overcome, claims 1-20 are allowable
over prior art. The following prior art made of record and not relied upon is cited to establish the
level of skill in the applicant's art and those arts considered reasonably pertinent to Applicant's
disclosure. See MPEP 707.05(c).
7. Regarding independent claim 1, Wu (US Patent Publication No. 2023/0154728 A1)
“Wu” [Cited in the IDS filed on September 11, 2025] describes in Paragraph [0004] “In an
example embodiment, a method is disclosed for controlling a plasma within a plasma processing
chamber. The method includes supplying multiple, sequential pulses of RF power to an electrode
of the plasma processing chamber. Each of the pulses of RF power includes a first duration over
which a first RF power profile exists, immediately followed by a second duration over which a
second RF power profile exists. The first RF power profile has greater RF power than the second
RF power profile. The first duration is less than the second duration. And, the sequential pulses
of RF power are separated from each other by a third duration.” Wu provides in Paragraph
[0046] and FIG. 4A “The plasma processing system 100 also includes a control system 153
configured and connected to control operations of the plasma processing system 100." Wu
describes in Paragraph [0031] “FIG. 1A shows the coil 101 from which RF signals are
transmitted into the plasma processing volume 106 to generate the primary plasma 105 within
the plasma processing volume 106 in exposure to a substrate 107. The coil 101 is also referred to
as a primary electrode." Paragraph [0058] provides that "FIG. 4 shows an RF power pulse profile
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Page 11
401 that includes RF pulse-initiation power spiking, in accordance with some embodiments. It
should be understood that the RF power pulse profile 401 can be applied equally to operation of
the bias RF signal generator 125 and to operation of the primary RF signal generator 137. More
specifically, when the bias RF signal generator 125 is being operated in a pulsed mode, the RF
power pulse profile 401 can be used. Also, when the primary RF signal generator 137 is being
operated in a pulsed mode, the RF power pulse profile 401 can be used. The RF power pulse
profile 401 includes multiple, sequential pulses of RF power 401A, 401B, 401C, etc., in
accordance with a set cycle duration d405." Wu describes in Paragraph [0061] “In an example
embodiment, the bias RF signal generator 125 is operated to provide an RF pulse-initiation
power spike of about 1000 Watts for about 10 to about 100 microseconds at the beginning of
each bias RF power pulse 401A, 401B, 401C, etc., followed by a steady RF bias power level of
about 500 W for the remainder of each bias RF power pulse 401A, 401B, 401C, etc.” Wu
describes in Paragraph [0040] "The plasma processing system 100 has certain advantages in
plasma process control in various plasma-based semiconductor fabrication applications, such as
in plasma etching, by way of example. The plasma processing system 100 provides for separate
Separate control of plasma
control of plasma density (ion flux/radical flux) and ion energy.
density (which directly correlates to ion flux and radical flux) and ion energy is particularly
useful in some semiconductor fabrication applications. For example, in patterning applications
where high plasma density is needed to obtain a required etch rate and where low ion energy is
required to reduce damage to one or more materials present on the substrate, such as photoresist
material." Paragraph [0041] describes "With the plasma processing system 100, the plasma
density can be increased through control of the plasma primary RF power supplied to the coil
101, and the bias voltage (Vb) can be controlled through control of the bias RF power supplied to
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Page 12
the bias electrode 123." Wu explains in Paragraph [0042] "In some fabrication applications a
high density plasma is needed at the substrate 107 level to obtain an increased ion flux and/or
increased radical flux near the substrate 107 to obtain an increased interaction rate on the
substrate 107, and simultaneously, a low ion energy is required at the substrate 107 level to avoid
damage to material on the substrate 107 and/or to reduce directionality of the ion flux incident
upon the substrate 107, i.e., to have a more isotropic ion flux at the substrate 107 level. In these
fabrication applications, the plasma density needs to be increased at the substrate 107 level
without increasing the bias voltage (Vb) at the substrate 107 level. For example, in a patterning
application, a photoresist material can be used to provide a protective coating over portions of
the substrate 107 during an etching operation. In this situation, a high bias voltage (Vb) can
increase the ion energy to the point where the ions that are incident upon the photoresist material
will sputter the photoresist material off of the substrate 107. And, because it is necessary for the
photoresist material to remain through the entirety of the etching process, it is of interest to keep
the bias voltage (V.sub.b) at the substrate 107 level low, e.g., less than 200 V (volts), to avoid
sputtering of the photoresist material and premature loss of the photoresist material.” Wu
provides in Paragraph [0058] “The RF power pulse profile 401 includes multiple, sequential
pulses of RF power 401A, 401B, 401C, etc., in accordance with a set cycle duration d405. Each
pulse of RF power 401A, 401B, 401C, etc., includes a first duration d401 over which a first RF
power profile p1 exists, immediately followed by a second duration d402 over which a second
RF power profile p2 exists. The first RF power profile pl has a greater RF power than the second
RF power profile p2. In the example of FIG. 4, the first RF power profile pl has an RF power
level of P2, and the second RF power profile p2 has an RF power level of P1. Also, the first
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duration d401 of the first RF power profile pl is less than the second duration d402 of the second
RF power profile p2."
8. US Patent Publication No. 2024/0347319 A1 to Funk et al. describes a method for
controlling plasma performance in a system for treating a substrate, wherein the system includes
one or more power sources. In general, the method may include supplying a first power signal
from the one or more power sources to a plasma process chamber to generate a plasma within the
plasma process chamber for treating the substrate with a pulsed plasma process, and supplying a
second power signal from the one or more power sources to the plasma process chamber. The
first power signal may include a first set of timing parameters that specify a pulse on-time and a
pulse off-time for the first power signal. Likewise, the second power signal may include a second
set of timing parameters that specify a pulse on-time and a pulse off-time for the second power
signal. In addition, the method may include generating measurement data corresponding to the
first power signal, the second power signal, the plasma and/or a chamber pressure, wherein the
measurement data is generated in real-time as the pulsed plasma process is performed.
Furthermore, the method may include adjusting, in response to the measurement data, one or
more timing parameters of the first power signal, one or more timing parameters of the second
power signal and/or the chamber pressure to modify a pulse width of the first power signal
and/or a pulse width of the second power signal to control one or more properties of the plasma
during the plasma process.
9. US Patent Publication No. 2010/0043830 A1 to Kitahara describes supplying processing
liquid having a predetermined flow rate and concentration to substrate processing units of a
substrate processing apparatus with high accuracy. The substrate processing apparatus, which
processes substrates in the substrate processing units using the processing liquid supplied from a
Application/Control Number: 19/037,542
Art Unit: 2117
Page 14
processing liquid supply part, sequentially carries the substrates to the respective substrate
processing units, and controls the processing start time such that if the flow rate of the processing
liquid used in one of the substrate processing units is less than the control flow rate that is
controllable at the processing liquid supply part, the substrates are carried to the plurality of
substrate processing units until a flow rate of the processing liquid reaches the control flow rate
that is controllable at the processing liquid supply part and then the processing liquid is used
simultaneously in the plurality of the substrate processing units.
10. However, the description of the cited prior art of record, individually or combined, would
not be combinable with the cited art of record, as it is not teaching the combined recitations
providing "...wherein the first plurality of controlled elements process the substrate at an
increased rate while operating in the first mode of operation relative to a second mode of
operation...wherein the first plurality of controlled elements operate in the first mode of
operation at least partially simultaneously to the second plurality of controlled elements
operating in the second mode of operation during a first time period", as recited in independent
claim 1 and similarly recited in independent claim 11. In addition, the description of the cited
prior art of record, individually or combined, would not be combinable with the cited art of
record, as it is not teaching the combined recitations providing “a first plurality of process result
thickness values of the substrate measured after exposing the substrate to the plasma related
fluxes associated with a first plurality of controlled elements operating in a first mode of
operation for a first plasma exposure duration; determining, by the processing device, a first
plurality of substrate processing rates associated with one of more locations across a surface of
the substrate corresponding to the plurality of controlled elements operating in the first mode of
operation," as recited in independent claim 17.
Application/Control Number: 19/037,542
Art Unit: 2117
Page 15
11. As dependent claims 2-10, 12-16, and 18-20 depend from an allowable base claim; they
are at least allowable for the same reasons as noted supra. Support for the above noted
limitations can be found, at least, in FIGS. 1-10 and corresponding description.
Conclusion
12. The prior art made of record and not relied upon is considered pertinent to applicant's
disclosure.
a. US Patent Publication No. 2016/0064192 A1 to Mizutani et al. describes a
method supplying a processing gas to each of a central gas inlet portion and a peripheral
gas inlet portion through a first branch line and a second branch line; closing a valve at a
downstream side in a gas line for an additional gas, and filling the additional gas in a tube
between the valve and an upstream flow rate controller; opening the valve after filling the
additional gas, and supplying a high frequency power to one of an upper electrode and a
lower electrode from a high frequency power supply after opening the valve.
b. US Patent Publication No. 2022/0328288 A1 to Kakimoto et al. describes a
plasma processing apparatus including a processing chamber in an inner portion of a
vacuum vessel to which an exhaust apparatus is coupled, an inert gas supply line that
supplies a purge inert gas for replacing a gas in an inner portion of the processing
chamber, process gas supply lines that supply a plurality of process gases into the process
chamber, and a control unit that controls operations of each of valves and a flow rate
regulator disposed in each of the gas supply lines, and leaks in a plurality of process gas
valves are simultaneously inspected using an inert gas. In particular, when a leakage of
the gas due to the leak in the valve is detected by a pressure gauge in the processing
chamber during a simultaneous inspection, a flow rate value of the gas flowing through
the flow rate regulator of each process gas supply line is confirmed, and a valve having
the leak is specified. Further, if the flow rate of the gas is not confirmed in the flow rate
regulator, each process gas supply line is pressurized and filled with the inert gas, and a
pressure value of a pressure gauge disposed in the inert gas supply line is confirmed for
each process gas supply line to specify a valve having the leak.
13. Any inquiry concerning this communication or earlier communications from the
examiner should be directed to ALICIA M. CHOI whose telephone number is (571)272-1473.
The examiner can normally be reached on Monday - Friday 7:30 am to 5:00 pm.
Application/Control Number: 19/037,542
Art Unit: 2117
Page 16
Examiner interviews are available via telephone, in-person, and video conferencing using
a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is
encouraged to use the USPTO Automated Interview Request (AIR) at
http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner's
supervisor, Robert Fennema can be reached on 571-272-2748. The fax phone number for the
organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of an application may be obtained from the Patent
Application Information Retrieval (PAIR) system. Status information for published applications
may be obtained from either Private PAIR or Public PAIR. Status information for unpublished
applications is available through Private PAIR only. For more information about the PAIR
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/ALICIA M. CHOI/
Primary Patent Examiner, Art Unit 2117
Prosecution Insights