DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention.
Priority
Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55.
Information Disclosure Statement
The information disclosure statement (IDS) submitted on 4/16/2025 was in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP §§ 706.02(l)(1) - 706.02(l)(3) for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b).
The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/process/file/efs/guidance/eTD-info-I.jsp.
Claim 1-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claim 2 of U.S. Patent No. US 11955315 B2 in view of Ma (US 20180166296 A1).
Current Application
PN US 11955315 B2
1. A processing apparatus for processing a workpiece, the processing apparatus comprising: a processing chamber; a plasma chamber separated from the processing chamber, the plasma chamber disposed on a first side of the processing chamber, the plasma chamber including a dielectric side wall; a gas supply system configured to deliver one or more process gases to the plasma chamber; a plasma source configured to generate a plasma from the one or more process gases in the plasma chamber; a workpiece support disposed within the processing chamber, the workpiece support configured to support a workpiece, wherein a back side of the workpiece faces the workpiece support; one or more radiative heat sources configured on a second and opposite side of the first side of the processing chamber, the radiative heating sources configured to heat the workpiece from the back side of the workpiece; a dielectric window disposed between the workpiece support and the one or more radiative heat sources; and a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.
2. The processing apparatus of claim 1, wherein the rotation system comprises a rotation shaft passing through the dielectric window, the rotation shaft configured to rotate the workpiece support in the processing chamber, wherein the rotation shaft is coupled to the magnetic actuator.
3. The processing apparatus of claim 2, wherein a first portion of the rotation shaft is disposed in the processing chamber and a second portion of the rotation shaft is disposed outside the processing chamber such that a vacuum pressure can be maintained in the processing chamber.
4. The processing apparatus of claim 3, wherein the second portion of the rotation shaft is coupled to the magnetic actuator.
5. The processing apparatus of claim 1, wherein the magnetic actuator is disposed around the workpiece.
6. The processing apparatus of claim 5, wherein the magnetic actuator comprises a magnetic levitation system.
7. The processing apparatus of claim 6, wherein the magnetic levitation system can move the workpiece in a vertical direction.
8. The processing apparatus of claim 1, wherein the plasma source is an inductively-coupled plasma source.
9. The processing apparatus of claim 8, wherein a grounded Faraday shield is disposed between the inductively-coupled plasma source and the plasma chamber.
10. The processing apparatus of claim 1, wherein the plasma chamber and processing chamber are separated via one or more separation grids.
11. The processing apparatus of claim 10, wherein the one or more separation grids comprise one or more cooling channels disposed therein.
12. The processing apparatus of claim 11, wherein a fluid is pumped through the one or more cooling channels to cool the one or more separation grids.
13. The processing apparatus of claim 12, wherein the fluid comprises water.
14. The processing apparatus of claim 10, further comprising one or more gas injection ports configured to inject gas between one or more separation grids.
15. The processing apparatus of claim 10, wherein the one or more separation grids are disposed such that one or more process gases can pass through the one or more separation grids into the processing chamber and expose a topside of the workpiece to the one or more process gases.
16. The processing apparatus of claim 10, wherein the one or more separation grids are disposed such that the plasma can be filtered forming a filtered mixture in the processing chamber exposing a topside of the workpiece to the filtered mixture.
17. The processing apparatus of claim 1, wherein the dielectric window comprises quartz.
18. The processing apparatus of claim 1, further comprising a pumping plate disposed around the workpiece, the pumping plate comprising one or more channels for directing a flow of gas through the processing chamber.
19. The processing apparatus of claim 1, wherein the one or more radiative heating sources are configured to emit broadband radiation to heat the workpiece.
20. The processing apparatus of claim 1, wherein the processing chamber is configured to maintain a vacuum pressure.
1. A processing apparatus for processing a workpiece, the processing apparatus comprising: a processing chamber; a plasma chamber separated from the processing chamber, the plasma chamber disposed on a first side of the processing chamber; a gas supply system configured to deliver one or more process gases to the plasma chamber; a plasma source configured to generate a plasma from the one or more process gases in the plasma chamber; a workpiece support disposed within the processing chamber, the workpiece support configured to support a workpiece, wherein a back side of the workpiece faces the workpiece support; one or more radiative heat sources configured on a second and opposite side of the first side of the processing chamber, the radiative heating sources configured to heat the workpiece from the back side of the workpiece; a dielectric window disposed between the workpiece support and the one or more radiative heat sources; and a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.
Claim 1 lacks:
the plasma chamber including a dielectric side wall
Ma teaches:
the plasma chamber including a dielectric side wall (122; fig 1; [0024]);
It would have been obvious for one of ordinary skill in the art to have modified Claim 1 of PN 11955315 B2 by implementing the plasma chamber including a dielectric side wall as disclosed by Ma in order to electrically isolate plasma generating means as suggested/taught by Ma ([0024]).
2. The processing apparatus of claim 1, wherein the rotation system comprises a rotation shaft passing through the dielectric window, the rotation shaft configured to rotate the workpiece support in the processing chamber, wherein the rotation shaft is coupled to the magnetic actuator.
3. The processing apparatus of claim 2, wherein a first portion of the rotation shaft is disposed in the processing chamber and a second portion of the rotation shaft is disposed outside the processing chamber such that a vacuum pressure can be maintained in the processing chamber.
4. The processing apparatus of claim 3, wherein the second portion of the rotation shaft is coupled to the magnetic actuator.
5. The processing apparatus of claim 1, wherein the magnetic actuator is disposed around the workpiece.
6. The processing apparatus of claim 5, wherein the magnetic actuator comprises a magnetic levitation system.
7. The processing apparatus of claim 6, wherein the magnetic levitation system can move the workpiece in a vertical direction.
8. The processing apparatus of claim 1, wherein the plasma source is an inductively-coupled plasma source.
9. The processing apparatus of claim 8, wherein a grounded Faraday shield is disposed between the inductively-coupled plasma source and the plasma chamber.
10. The processing apparatus of claim 1, wherein the plasma chamber and processing chamber are separated via one or more separation grids.
11. The processing apparatus of claim 10, wherein the one or more separation grids comprise one or more cooling channels disposed therein.
12. The processing apparatus of claim 11, wherein a fluid is pumped through the one or more cooling channels to cool the one or more separation grids.
13. The processing apparatus of claim 12, wherein the fluid comprises water.
14. The processing apparatus of claim 10, further comprising one or more gas injection ports configured to inject gas between one or more separation grids.
15. The processing apparatus of claim 10, wherein the one or more separation grids are disposed such that one or more process gases can pass through the one or more separation grids into the processing chamber and expose a topside of the workpiece to the one or more process gases.
16. The processing apparatus of claim 10, wherein the one or more separation grids are disposed such that the plasma can be filtered forming a filtered mixture in the processing chamber exposing a topside of the workpiece to the filtered mixture.
17. The processing apparatus of claim 1, wherein the dielectric window comprises quartz.
18. The processing apparatus of claim 1, further comprising a pumping plate disposed around the workpiece, the pumping plate comprising one or more channels for directing a flow of gas through the processing chamber.
19. The processing apparatus of claim 1, wherein the one or more radiative heating sources are configured to emit broadband radiation to heat the workpiece.
20. The processing apparatus of claim 1, wherein the processing chamber is configured to maintain a vacuum pressure.
Claims 1-4, and 6 is rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-5 of U.S. Patent No. US 12308209 B2 in view of Ma (US 20180166296 A1).
Current Application
US 12308209 B2
1. A processing apparatus for processing a workpiece, the processing apparatus comprising: a processing chamber; a plasma chamber separated from the processing chamber, the plasma chamber disposed on a first side of the processing chamber, the plasma chamber including a dielectric side wall; a gas supply system configured to deliver one or more process gases to the plasma chamber; a plasma source configured to generate a plasma from the one or more process gases in the plasma chamber; a workpiece support disposed within the processing chamber, the workpiece support configured to support a workpiece, wherein a back side of the workpiece faces the workpiece support; one or more radiative heat sources configured on a second and opposite side of the first side of the processing chamber, the radiative heating sources configured to heat the workpiece from the back side of the workpiece; a dielectric window disposed between the workpiece support and the one or more radiative heat sources; and a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.
2. The processing apparatus of claim 1, wherein the rotation system comprises a rotation shaft passing through the dielectric window, the rotation shaft configured to rotate the workpiece support in the processing chamber, wherein the rotation shaft is coupled to the magnetic actuator.
3. The processing apparatus of claim 2, wherein a first portion of the rotation shaft is disposed in the processing chamber and a second portion of the rotation shaft is disposed outside the processing chamber such that a vacuum pressure can be maintained in the processing chamber.
4. The processing apparatus of claim 3, wherein the second portion of the rotation shaft is coupled to the magnetic actuator.
6. The processing apparatus of claim 5, wherein the magnetic actuator comprises a magnetic levitation system.
21. (New) A method for processing a workpiece in a processing apparatus, the method comprising: placing the workpiece on a workpiece support disposed in a processing chamber; admitting one or more process gases to a plasma chamber; generating one or more species from the one or more process gases in a plasma using an inductively coupled plasma source in the plasma chamber;
filtering the one or more species with one or more separation grids to create a filtered mixture containing one or more radicals; exposing the workpiece to the filtered mixture containing one or more radicals;
emitting, by one or more radiative heat sources, radiation directed at one or more surfaces of a workpiece to heat at least a portion of a surface of the workpiece; and rotating the workpiece in the processing chamber via a rotation system including a magnetic actuator.
Claim 1 lacks:
the plasma chamber including a dielectric side wall;
a dielectric window disposed between the workpiece support and the one or more radiative heat sources;
Ma teaches:
the plasma chamber including a dielectric side wall (122; fig 1; [0024]);
a dielectric window (162) disposed between the workpiece support (114) and the one or more radiative heat sources (160);
It would have been obvious for one of ordinary skill in the art to have modified Claim 1 of PN 11955315 B2 by implementing the plasma chamber including a dielectric side wall as disclosed and a dielectric window disposed between the workpiece support and the one or more radiative heat sources by Ma in order to electrically isolate plasma generating means as suggested/taught by Ma ([0024]).
2. The method of claim 1, wherein the rotation system includes a rotation shaft coupled to the magnetic actuator, the rotation shaft at least partially disposed in the processing chamber.
3. The method of claim 1, wherein a first portion of the rotation shaft is disposed in the processing chamber and a second portion of the rotation shaft is disposed outside the processing chamber such that a vacuum pressure can be maintained in the processing chamber.
4. The method of claim 1, wherein the magnetic actuator is disposed at a fixed location in the processing chamber.
5. The method of claim 1, wherein the magnetic actuator comprises a magnetic levitation system capable of producing a magnetic field to rotate the workpiece.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
Ma (US 20180358206 A1) discloses:
A method for processing a workpiece in a processing apparatus (fig 1), the method comprising:
placing the workpiece (114) on a workpiece support (112) disposed in a processing chamber (110); admitting one or more process gases to a plasma chamber [0022]; generating one or more species from the one or more process gases in a plasma using an inductively coupled plasma source (130) in the plasma chamber [0036];
filtering the one or more species with one or more separation grids (116) to create a filtered mixture containing one or more radicals; exposing the workpiece to the filtered mixture containing one or more radicals [0040];
deVilliers (US 20170278761 A1) discloses:
A processing apparatus for processing a workpiece (figs 1-10), the processing apparatus comprising:
a processing chamber (see bottom portion below W);
a plasma chamber (see portion above W)separated from the processing chamber, the plasma chamber disposed on a first side of the processing chamber (portion above W);
a gas supply system (180) configured to deliver one or more process gases to the plasma chamber [0024];
a plasma source ([0060-0062]) configured to generate a plasma from the one or more process gases in the plasma chamber;
a workpiece support (see 112, 140) disposed within the processing chamber, the workpiece support configured to support a workpiece (W), wherein a back side of the workpiece faces the workpiece support (see back of W facing 112/140);
Kobayashi (US 20150083042 A1) discloses:
rotating the workpiece in the processing chamber via a rotation system including a magnetic actuator (fig 4; [0060])
Ma (US 20180166296 A1)
emitting, by one or more radiative heat sources (160; fig 1; ), radiation directed at one or more surfaces of a workpiece to heat at least a portion of a surface of the workpiece ([0028-0030]);
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Renan Luque whose telephone number is (571)270-1044. The examiner can normally be reached M-F 9:30AM-5:30PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Alexander Taningco can be reached at (571)272-8048. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/RENAN LUQUE/ Primary Examiner, Art Unit 2844
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