Listed by the USPTO as ANGEBRANNDT, MARTIN J
Tech Center 1700 • Art Units: 1713 1722 1737 1795
This examiner grants 56% of resolved cases
ANGEBRANNDT, MARTIN J is assigned to Tech Center 1700 and Art Unit 1713. The profile records 1381 resolved cases, a 55.5% allowance rate, and a median of 1143 days to allowance. The interview lift is 34.1%.
The listed companies are Shin-Etsu Chemical Co., Ltd., Taiwan Semiconductor Manufacturing Company, Ltd., and Samsung Electronics Co., Ltd. The listed firms are SUGHRUE MION, PLLC, BIRCH STEWART KOLASCH & BIRCH, LLP, and Element IP, PLC. The large resolved-case base supports using these measures in portfolio counseling. The allowance rate calls for deliberate claim strategy, while the timing and interview figures support early scheduling and substantive examiner engagement.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18609116 | METHOD FOR TESTING PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING PHOTOSENSITIVE COMPOSITION | Non-Final OA | FujiFilm Corporation |
| 18588680 | ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR AND METHOD OF PREPARING PRINTING PLATE | Non-Final OA | FUJIFILM Corporation |
| 18333933 | FLEXOGRAPHIC PRINTING PLATE PRECURSOR AND MANUFACTURING METHOD OF FLEXOGRAPHIC PRINTING PLATE | Final Rejection | FUJIFILM Corporation |
| 18404865 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18526038 | PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18317328 | EXTREME ULTRAVIOLET (EUV) PHOTOMASK | Final Rejection | Samsung Electronics Co., Ltd. |
| 18133118 | METHOD FOR FORMING RESIST PATTERN BY USING EXTREME ULTRAVIOLET LIGHT AND METHOD FOR FORMING PATTERN BY USING THE RESIST PATTERN AS MASK | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18561978 | METHOD OF MAKING HOLOGRAMS USING LIQUID CRYSTAL MASTERS | Non-Final OA | Magic Leap, Inc. |
| 18200238 | PHOTOMASK AND METHOD OF MANUFACTURING DISPLAY PANEL USING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18518135 | HOLOGRAPHIC RECORDING MEDIUM, HOLOGRAPHIC POLYMER MATERIAL, PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 17900065 | METHOD OF FORMING AN UNDERLAYER FOR EXTREME ULTRAVIOLET (EUV) DOSE REDUCTION AND STRUCTURE INCLUDING SAME | Non-Final OA | ASM IP Holding B.V. |
| 18068732 | PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST | Final Rejection | Intel Corporation |
| 18005571 | METAL CHELATORS FOR DEVELOPMENT OF METAL-CONTAINING PHOTORESIST | Final Rejection | Lam Research Corporation |
| 17884117 | DRAWING METHOD, MASTER PLATE MANUFACTURING METHOD, AND DRAWING APPARATUS | Non-Final OA | KIOXIA CORPORATION |
| 17899263 | ATTENUATED PHASE SHIFT MASK FOR TALBOT LITHOGRAPHY | Final Rejection | META PLATFORMS, INC. |
| 18610591 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 18370756 | Polymer, Chemically Amplified Positive Resist Composition, Resist Patterning Process, And Mask Blank | Final Rejection | SHIN-ETSU CHEMICAL CO., LTD. |
| 18205127 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18115095 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 18165485 | COMPOSITION FOR FORMING METAL OXIDE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING METAL OXIDE FILM | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18007514 | Pellicle Frame, Pellicle, Pellicle-Equipped Exposure Original Plate, Exposure Method, Method for Manufacturing Semiconductor, and Method for Manufacturing Liquid Crystal Display Board | Non-Final OA | Shin-Etsu Chemical Co., Ltd. |
| 17669745 | REFLECTIVE MASK BLANK, AND METHOD FOR MANUFACTURING THEREOF | Final Rejection | SHIN-ETSU CHEMICAL CO., LTD. |
| 17603930 | Pellicle, Exposure Original Plate with Pellicle, Method for Producing Semiconductor Device, Method for Producing Liquid Crystal Display Board, Method for Regenerating Exposure Original Plate, and Peeling Residue Reduction Method | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 17603932 | Agglutinant for Pellicle, Pellicle, Exposure Original Plate with Pellicle, Method for Producing Semiconductor Device, Method for Producing Liquid Crystal Display Board, Method for Regenerating Exposure Original Plate, and Peeling Residue Reduction Method | Final Rejection | Shin-Etsu Chemical Co., Ltd. |
| 16262102 | METHOD FOR PROCESSING A MASK SUBSTRATE TO ENABLE BETTER FILM QUALITY | Non-Final OA | Applied Materials, Inc. |
| 18766358 | PELLICLE STRUCTURE FOR EUV LITHOGRAPHY AND METHODS OF MANUFACTURING THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18522662 | SYSTEM AND STRUCTURE INCLUDING A PELLICLE | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18508423 | PHOTORESIST COMPOSITION | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18118498 | PELLICLE AND METHOD OF MANUFACTURING THEREOF | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18404776 | MULTILAYER PROTECTION COATING WITH LAYERS OF DIFFERENT FUNCTIONS ON CARBON NANOTUBE | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy55.5% of resolved applications examined by Martin J Angebranndt were allowed (1,381 resolved cases), compared with 62.4% across Art Unit 1713 over the last five years.
This examiner's interview lift is +34.1 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Martin J Angebranndt took 1,143 days on average from filing to allowance.
Martin J Angebranndt examines applications in Art Unit 1713 in Tech Center 1700 (Chemistry & Materials).
