Prosecution Insights
Last updated: October 02, 2026

Examiner: CARRUTH, JENNIFER DOAK

Tech Center 2800 • Art Units: 2800 2871 2872 2893 2898

This examiner grants 77% of resolved cases

Analysis

Jennifer Doak Carruth is an examiner in Tech Center 2800 and Art Unit 2800. She has resolved 934 cases with an allowance rate of 77.3 percent. This high volume and high rate suggest a predictable experience for applicants. The 934 resolved cases provide a robust dataset for understanding the examiner's approach to patent examination.

The interview lift is 15.5 percent. This lift further improves the 77.3 percent baseline, making interviews a recommended strategy. Direct engagement helps move cases toward allowance more effectively. The 15.5 percent lift indicates that verbal discussion is a successful method for resolving issues and reaching a grant in this docket.

The median days to allowance is 986. This timeline is a specific metric for applicants to gauge the expected duration of their prosecution. With a 77.3 percent allowance rate and 15.5 percent lift, practitioners can expect a grant within this 986-day timeframe. The 986 days to allowance reflects an efficient pace of examination for this art unit.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

77.3%
Allow Rate
+9.3% vs TC avg
943
Total Applications
+15.5%
Interview Lift
986
Avg Prosecution Days
Based on 934 resolved cases, 2023–2026

Rejection Statute Breakdown

0.6%
§101 Eligibility
31.6%
§102 Novelty
50.9%
§103 Obviousness
10.2%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18444284 Infrared Coatings for Gaze Tracking Systems Non-Final OA Apple Inc.
17817326 SIDE REAR-VIEW MIRROR CONTROL APPARATUS AND METHOD FOR VEHICLE Non-Final OA HYUNDAI MOBIS CO., LTD.
18186971 LASER SCANNING METHOD, LASER SCANNING SYSTEM, AND LASER SCANNING PROGRAM Final Rejection TOPCON CORPORATION
17741329 Method of Manufacture for a Lightweight, High-Precision Silicon Carbide Mirror Assembly Non-Final OA Raytheon Company
18319617 METHOD FOR PRODUCING A MAIN BODY OF AN OPTICAL ELEMENT FOR SEMICONDUCTOR LITHOGRAPHY, AND MAIN BODY OF AN OPTICAL ELEMENT FOR SEMICONDUCTOR LITHOGRAPHY Final Rejection Carl Zeiss SMT GmbH
17162439 SUBSTRATE FOR AN EUV-LITHOGRAPHY MIRROR Final Rejection Carl Zeiss SMT GmbH

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