Tech Center 1700 • Art Units: 1700 1712 1722 1724 1732 1737 1748 1761 1763 1795
This examiner grants 16% of resolved cases
Michael B Cleveland is an examiner in Tech Center 1700 and Art Unit 1700. The profile shows 79 resolved cases with an allowance rate of 16.5 percent. The median days to allowance is 1485. These metrics indicate a very challenging and lengthy prosecution process. The 16.5 percent allowance rate suggests that the vast majority of applications do not reach allowance.
The interview lift is 16.0 percent. This suggests that interviews can help improve the low 16.5 percent allowance rate. With 79 resolved cases, the data indicates that direct communication is a useful tactic despite the long 1485 day median pendency. Practitioners should be prepared for a rigorous experience in Art Unit 1700. The 16.0 percent lift provides a potential path forward in an otherwise difficult prosecution environment.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 17938656 | EXTREME ULTRA-VIOLET (EUV) LITHOGRAPHY PROCESSES FOR PATTERNING PHOTORESIST AND PHOTOLITHOGRAPHY MASKS USED THEREIN | Final Rejection | Samsung Electronics Co., Ltd. |
| 17849124 | METHOD OF MANUFACTURING CONDUCTIVE SUBSTRATE, CONDUCTIVE SUBSTRATE, TOUCH SENSOR, ANTENNA, ELECTROMAGNETIC WAVE SHIELDING MATERIAL | Final Rejection | FUJIFILM Corporation |
| 17818369 | PHOTOMASK AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 17880019 | EXTREME ULTRAVIOLET MASK WITH DIFFUSION BARRIER LAYER | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 17736772 | MANUFACTURING METHOD OF EUV PHOTO MASKS | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 17710218 | METHOD FOR LITHOGRAPHY USING MIDDLE LAYER WITH POROUS TOP SURFACE | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 17679463 | SURFACE TREATMENT TO PHOTOSENSITIVE LAYER | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18151413 | NEGATIVE TONE PHOTORESIST FOR EUV LITHOGRAPHY | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 17461656 | Semiconductor Device and Methods of Manufacture | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17684329 | OXIDATION TREATMENT FOR POSITIVE TONE PHOTORESIST FILMS | Final Rejection | Applied Materials, Inc. |
| 17890766 | METHOD TO ENHANCE LITHOGRAPHY PATTERN CREATION USING SEMICONDUCTOR STRESS FILM TUNING | Final Rejection | Tokyo Electron Limited |
| 18020151 | SECONDARY ALKANE SULTANATE DETERGENT COMPOSITION | Non-Final OA | Conopco, Inc., d/b/a UNILEVER |
| 18073568 | APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE | Final Rejection | SEMES CO., LTD. |
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