Listed by the USPTO as HERNANDEZ-KENNEY, JOSE
Tech Center 4100 • Art Units: 1717 1784 1788 4100
This examiner grants 55% of resolved cases
HERNANDEZ-KENNEY, JOSE has resolved 607 cases in tech center 4100 and art unit 1717. The allowance rate is 54.7%, with a 22.5% interview lift. The median time to allowance is 1202 days. The figures suggest that prosecution may involve extended pendency and that examiner interviews can be a useful component of the response strategy.
The leading companies are ASM IP Holding B.V., Applied Materials Inc., and Tokyo Electron Limited. Snell & Wilmer (ASM IP Holding B.V.), WENDEROTH, LIND & PONACK, L.L.P., and BIRCH STEWART KOLASCH & BIRCH, LLP are the listed firms. The company and firm records reflect concentrated semiconductor-process experience.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18802472 | PLANARIZATION METHOD AND METHOD OF MANUFACTURING ARTICLE | Non-Final OA | CANON KABUSHIKI KAISHA |
| 19401507 | METHOD OF FILLING GAP WITH FLOWABLE CARBON LAYER | Non-Final OA | ASM IP Holding B.V. |
| 19234603 | METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAME | Non-Final OA | ASM IP Holding B.V. |
| 18610654 | METHOD FOR REDUCING INCUBATION PERIOD OF SILICON NITRIDE LAYER DEPOSITION, STRUCTURE FORMED USING THE METHOD, AND SYSTEM FOR PERFORMING THE METHOD | Non-Final OA | ASM IP Holding B.V. |
| 17666681 | METHOD AND SYSTEM FOR FORMING BORON NITRIDE ON A SURFACE OF A SUBSTRATE | Non-Final OA | ASM IP Holding B.V. |
| 17759096 | PROTECTIVE COATING FOR A SEMICONDUCTOR REACTION CHAMBER | Non-Final OA | Lam Research Corporation |
| 18709002 | METHOD OF FABRICATING A DEVICE HAVING A PASSIVATING LAYER | Non-Final OA | Microsoft Technology Licensing, LLC |
| 18887130 | FORMING A PASSIVATION COATING FOR MEMS DEVICES | Final Rejection | Texas Instruments Incorporated |
| 19212511 | Substrate Processing Method and Substrate Processing Apparatus | Final Rejection | Tokyo Electron Limited |
| 18555055 | SURFACE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE | Final Rejection | Tokyo Electron Limited |
| 19206441 | METHOD OF COATING A SUBSTRATE INCLUDING A MULTI-LAYER COATING | Final Rejection | Applied Materials, Inc. |
| 18909425 | NOBLE GAS PLASMA CURES TO ENABLE INCREASED CROSSLINKING IN LOW-K DIELECTRIC FILMS | Final Rejection | Applied Materials, Inc. |
| 18585303 | IN SITU NUCLEATION FOR NANOCRYSTALLINE DIAMOND FILM DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18720470 | METHOD FOR PRODUCING INSULATION PRODUCTS BASED ON MINERAL FIBRES OR ORGANIC FIBRES OF NATURAL ORIGIN | Non-Final OA | SAINT-GOBAIN ISOVER |
| 18785193 | METHOD OF MAKING FLAT POTASSIUM-INTERCALATED METALLIC TRANSITION METAL CHALCOGEN NANOARRAYS | Final Rejection | CITY UNIVERSITY OF HONG KONG |
| 18226376 | System And Method For Applying A Coating Material To A Web | Final Rejection | Graphic Packaging International, LLC |
| 18268484 | CELL CULTURE MICROCARRIER AND CELL CULTURING METHOD | Final Rejection | SEKISUI CHEMICAL CO., LTD. |
| 18930500 | METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18212607 | PROCESS FOR AN IPC COATING | Final Rejection | FUJIFILM DIMATIX, INC. |
| 18568195 | A SEALING ELEMENT WITH IMPROVED ADHESION TO CONCRETE AND METHOD FOR PRODUCING THEREOF | Final Rejection | SIKA TECHNOLOGY AG |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy54.7% of resolved applications examined by Jose Hernandez-Kenney were allowed (607 resolved cases), compared with 49.3% across Art Unit 1717 over the last five years.
This examiner's interview lift is +22.5 percentage points: the difference in allowance rate between resolved applications that had an examiner interview and those that did not.
Applications allowed by Jose Hernandez-Kenney took 1,202 days on average from filing to allowance.
Jose Hernandez-Kenney examines applications in Art Unit 1717 in Tech Center 4100.
