Tech Center 4100 • Art Units: 1713 1718 2872 4100
This examiner grants 58% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18973788 | APPARATUS AND METHODS FOR PERFORMING AN IN-SITU ETCH OF REACTION CHAMBERS WITH FLUORINE-BASED RADICALS | Non-Final OA | ASM IP Holding B.V. |
| 18861003 | POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD | Non-Final OA | Resonac Corporation |
| 18839049 | ETCHING METHOD | Non-Final OA | Resonac Corporation |
| 18846229 | FAST ATOMIC LAYER ETCH | Non-Final OA | Lam Research Corporation |
| 18724531 | METHOD FOR REDUCING VARIATIONS IN MASK TOPOGRAPHY | Non-Final OA | Lam Research Corporation |
| 18701479 | STRIP WITH BEVEL CLEANING | Final Rejection | Lam Research Corporation |
| 18977848 | SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Kioxia Corporation |
| 18610909 | SYSTEM AND METHOD FOR ADJUSTING ETCH SELECTIVITY OF ETCHANT SOLUTION | Non-Final OA | Tokyo Electron Limited |
| 18430313 | METHOD FOR ETCHING A PATTERN IN A LAYER OF A SUBSTRATE | Final Rejection | Tokyo Electron Limited |
| 18728534 | ATOMIC LAYER ETCHING OF METALS USING NOVEL CO-REACTANTS AS HALOGENATING AGENTS | Non-Final OA | North Carolina State University |
| 18624852 | SITU PROTECTIVE POLYMER VIA MILLING-EXCITATION | Non-Final OA | FEI Company |
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