Prosecution Insights
Last updated: April 19, 2026
Application No. 17/372,564

PACKAGE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

Non-Final OA §102
Filed
Jul 12, 2021
Examiner
SPALLA, DAVID C
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company Ltd.
OA Round
6 (Non-Final)
84%
Grant Probability
Favorable
6-7
OA Rounds
2y 5m
To Grant
89%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allow Rate
703 granted / 836 resolved
+16.1% vs TC avg
Minimal +5% lift
Without
With
+4.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
18 currently pending
Career history
854
Total Applications
across all art units

Statute-Specific Performance

§103
47.7%
+7.7% vs TC avg
§102
34.4%
-5.6% vs TC avg
§112
8.6%
-31.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 836 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 07/12/2021 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 2, 15, 16, 18 and 20-23 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by US PG Pub 2010/0284155 to Stoize et al (hereinafter Stoize). Regarding Claim 1, Stoize discloses a package structure, comprising: a first die (120, Fig. 6); an encapsulant (104) encapsulating the first die; a redistribution structure (200) disposed over and electrically connected to the first dies comprising a dielectric laver (Printed circuit boards by definition are formed of a dielectric material with internal wiring. Typically, the dielectric material consists of a ceramic or polyimide); and a securing element (500), penetrating through the dielectric laver of the redistribution structure, the encapsulant and an outer peripheral edge corner of the first die and completely electrically isolated from the first die (Fig. 6). Regarding Claim 2, Stoize discloses the package structure of Claim 1 further comprising an electrical device (400) over the first die, wherein the securing element further penetrates the electrical device. Regarding Claim 15, Stoize discloses a method of manufacturing a package structure, comprising: providing a package comprising a first die (120, Fig. 6), an encapsulant (104) encapsulating the first die and a redistribution structure (200) disposed over and electrically connected to the package and comprising a dielectric laver (Printed circuit boards by definition are formed of a dielectric material with internal wiring. Typically, the dielectric material consists of a ceramic or polyimide); forming a first hole (253/53) in the package, the first hole penetrating an outer peripheral edge corner of the first die and the dielectric laver of the redistribution structure (Fig. 6); and inserting a securing element (500) into the first hole, wherein the securing element is completely electrically isolated from the first die (Fig. 6). Regarding Claim 16, Stoize discloses the method of Claim 15, wherein the package further comprises a second die adjacent to the first die, and the first hole further penetrates an outer peripheral edge corner of the second die (Fig. 6). Regarding Claim 18, Stoize discloses the method of Claim 15 further comprising an electrical device (400) comprising a second hole (453), wherein the securing element further inserts into the second hole. Regarding Claim 20, Stoize discloses the method of Claim 15, wherein the first hole is formed by removing the outer peripheral edge corner of the first die and a portion of the encapsulant (Fig. 6). Regarding Claim 21, Stoize discloses the package structure of Claim 1, wherein a gap is formed between the securing element and the first die, and the gap surrounds the securing element (Fig. 1). Regarding Claim 22, Stoize discloses the method of Claim 16, wherein the first hole is formed by removing the outer peripheral edge corners of the first die and the second die and a portion of the encapsulant (Fig. 6). Regarding Claim 23, Stoize discloses the package structure of Claim 1, wherein the securing element is electrically isolated from the redistribution structure. Allowable Subject Matter Claims 8 and 10-14 are allowed. Claims 4, 6, 7, 19, 24 objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is an examiner’s statement of reasons for allowance: Claim 8 recites a package structure, comprising: a first die encapsulated by an encapsulant; a redistribution structure over a first side of the first die, the redistribution structure comprising a dielectric layer and a plurality of redistribution conductive patterns in the dielectric layer; a screw, penetrating the dielectric layer of the redistribution structure, the encapsulant and an outer peripheral edge corner of the first die; and a seal ring in the dielectric layer, electrically insulated from the redistribution conductive patterns, wherein the seal ring comprises a plurality of first conductive layers and a plurality of first conductive vias between the plurality of first conductive layers. Stoize does not disclose a seal ring in the dielectric layer of the redistribution structure. While seal rings were known in the art, prior to the invention, they are not typically used in printed circuit boards and would not have been an obvious modification of Stoize. Claims 10-14 depend on Claim 8 and are allowable for at least the reasons above. Claims 6, 7 and 19 are similarly allowable for the reasons above. Claim 4 requires a plurality of solder regions, wherein the redistribution structure is electrically connected to and disposed between the plurality of solder regions and the first die. The solder regions of Stoize are between the redistribution structure and the first die. It would not have been an obvious modification to move them to satisfy Applicant’s embodiment. Claim 24 requires the securing element be in direct contact with the first die. It is not an obvious modification of Stoize for the securing element to be in a hole which exposes the first die, thereby making the securing element directly contact the first die. Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.” Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to DAVID C SPALLA whose telephone number is (303)297-4298. The examiner can normally be reached Mon-Fri 10am-5pm MST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Britt Hanley can be reached at 571-270-3042. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DAVID C SPALLA/ Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Jul 12, 2021
Application Filed
Dec 16, 2022
Non-Final Rejection — §102
Jan 10, 2023
Interview Requested
Jan 19, 2023
Applicant Interview (Telephonic)
Mar 22, 2023
Response Filed
Oct 06, 2023
Non-Final Rejection — §102
Nov 13, 2023
Interview Requested
Nov 29, 2023
Applicant Interview (Telephonic)
Nov 30, 2023
Examiner Interview Summary
Jan 11, 2024
Response Filed
Jun 20, 2024
Final Rejection — §102
Sep 11, 2024
Response after Non-Final Action
Oct 12, 2024
Response after Non-Final Action
Oct 28, 2024
Request for Continued Examination
Oct 29, 2024
Response after Non-Final Action
Dec 14, 2024
Non-Final Rejection — §102
Jan 24, 2025
Examiner Interview Summary
Jan 24, 2025
Applicant Interview (Telephonic)
Mar 26, 2025
Response Filed
Sep 12, 2025
Final Rejection — §102
Oct 03, 2025
Interview Requested
Oct 10, 2025
Examiner Interview Summary
Oct 10, 2025
Applicant Interview (Telephonic)
Dec 03, 2025
Request for Continued Examination
Dec 10, 2025
Response after Non-Final Action
Jan 10, 2026
Non-Final Rejection — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604508
SEMICONDUCTOR DEVICE HAVING SIDE SPACER PATTERNS
2y 5m to grant Granted Apr 14, 2026
Patent 12593475
FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND METHOD
2y 5m to grant Granted Mar 31, 2026
Patent 12588233
SEMICONDUCTOR DEVICE HAVING U-SHAPED STRUCTURE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
2y 5m to grant Granted Mar 24, 2026
Patent 12586644
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING CRACK-RESISTANT BACKSIDE PASSIVATION STRUCTURE AND METHODS OF FORMING THE SAME
2y 5m to grant Granted Mar 24, 2026
Patent 12581677
Passivation Layers For Semiconductor Devices
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

6-7
Expected OA Rounds
84%
Grant Probability
89%
With Interview (+4.7%)
2y 5m
Median Time to Grant
High
PTA Risk
Based on 836 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month