Prosecution Insights
Last updated: August 17, 2026
Application No. 17/521,076

TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION

Non-Final OA §112
Filed
Nov 08, 2021
Examiner
CHEN, JACK S J
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Globalfoundries U S Inc.
OA Round
3 (Non-Final)
77%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
82%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
438 granted / 572 resolved
+8.6% vs TC avg
Moderate +5% lift
Without
With
+5.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
44 currently pending
Career history
617
Total Applications
across all art units

Statute-Specific Performance

§101
0.5%
-39.5% vs TC avg
§103
31.8%
-8.2% vs TC avg
§102
32.5%
-7.5% vs TC avg
§112
27.3%
-12.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 572 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 5/1/2026 has been entered. Claim Rejections - 35 USC § 112 The following is a quotation of the first paragraph of 35 U.S.C. 112(a): (a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention. The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112: The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention. Claims 1-11 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention. Re claim 1, the phrase “wherein diffusion of the silicide slows down within the upper semiconductor material compared to the middle semiconductor material and the lower semiconductor material” was not described in the original specification. The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 11-19 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Re claim 11, the phrase “an upper semiconductor material comprising SiGe and a lower semiconductor material comprising one of Si, SiC, SiP and SiCP” is unclear and indefinite (i.e., same or different from the ones recited in claim 1). Re claim 12, the phrase “the interface” lacks antecedent basis. Re claim 13, the phrase “the second semiconductor material” lacks antecedent basis. Re claim 13, the phrase “the first semiconductor material” lacks antecedent basis. Re claim 13, the phrase “the third semiconductor material” lacks antecedent basis. Re claim 14, the phrase “the second semiconductor material” lacks antecedent basis. Re claim 15, the phrase “the first semiconductor material” lacks antecedent basis. Re claim 15, the phrase “the second semiconductor material” lacks antecedent basis. Re claim 16, the phrase “the second semiconductor material” lacks antecedent basis. Re claim 16, the phrase “the third semiconductor material” lacks antecedent basis. Re claim 18, the phrase “the first semiconductor material” lacks antecedent basis. Re claim 18, the phrase “the second semiconductor material” lacks antecedent basis. Re claim 19, the phrase “an upper semiconductor material …” is unclear and indefinite (i.e., same or different from the ones recited in claim 12). Response to Arguments Applicant's arguments filed 5/1/2026 have been fully considered but they are not persuasive for reasons herein above. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to JACK CHEN whose telephone number is (571)272-1689. The examiner can normally be reached Monday to Friday, 8am to 4pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara J. Green can be reached at (571)270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JACK S CHEN/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Show 7 earlier events
May 08, 2025
Response after Non-Final Action
May 08, 2025
Response Filed
Sep 15, 2025
Response Filed
Feb 13, 2026
Final Rejection mailed — §112
Apr 10, 2026
Response after Non-Final Action
May 01, 2026
Request for Continued Examination
May 05, 2026
Response after Non-Final Action
Jul 29, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12703625
THROUGH-SUBSTRATE CONDUCTOR SUPPORT
5y 1m to grant Granted Aug 11, 2026
Patent 12707698
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
3y 11m to grant Granted Aug 11, 2026
Patent 12707705
SILICIDING METHOD
3y 6m to grant Granted Aug 11, 2026
Patent 12684829
FIELD EFFECT TRANSISTOR
2y 5m to grant Granted Jul 14, 2026
Patent 12677458
HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIAL IN SILICON RECESS
4y 9m to grant Granted Jul 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
77%
Grant Probability
82%
With Interview (+5.2%)
2y 11m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 572 resolved cases by this examiner. Grant probability derived from career allowance rate.

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