DETAILED ACTION
Notice of AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Response to Amendment
Acknowledgment is made of applicant’s Amendment, filed 20 May 2025. The changes and remarks disclosed therein have been considered.
Claims 5, 11, 20 have been cancelled by Amendment. Therefore, claims 1-4, 6-10, 12-19, 21-23 are pending in the application.
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention.
Claims 7-10, 12-14 are rejected under both 35 U.S.C. 102(a)(1) as being anticipated by Sinangil et al (US 9,208,900 B2 hereinafter “Sinangil”).
Per MPEP 2111 and 2111.01, the claims are given their broadest reasonable interpretation and the words of the claims are given their plain meaning consistent with the specification without importing claim limitations from the specification.
Regarding Independent Claim 7, Sinangil, for example in Figs. 1-9, discloses a system (see for example in Fig. 9) comprising:
a word line driver circuit (e.g., 200; in Figs. 2A, 7A);
a charge pump circuit (e.g., 400; in Figs. 4A, 4B) configured to:
increase a voltage level of a voltage supply provide to a memory cell from a first voltage to a higher second voltage based on a first number of selected capacitors of the plurality of capacitors (e.g., BOOST CAM 500 included 400 is selected to C0, C1, C2 via switch element 412; in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)), during a memory read operation of the memory cell (implied read operation; see for example in Figs. 4A, 4B, 5, 7A); and
decrease, in response to preventing a data flip error in the memory cell during the memory read operation based on the higher second voltage, a voltage level of the higher second voltage to a third voltage provide to the memory cell based on a second number of selected capacitors of the plurality of capacitors (e.g., BOOST CAM 500 included 400 is selected to C0, C1, C2 via switch element 412; in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)),
wherein the third voltage is between the first voltage and the higher second voltage,
wherein the second number is less than the first number, and wherein the plurality of capacitors are configured to share a first common node electrically connected to the voltage supply and to share a second common node when selected (via BOOST CAM 500 included 400 is selected to C0, C1, C2 via switch element 412; in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)); and
a memory array (e.g., memory array 100; in Fig. 1A) comprising a plurality of memory cells (e.g., 106; in Fig. 1A), wherein each of the memory cells (e.g., 106; in Fig. 1B) comprises: a plurality of pull-up devices (e.g., 132/136; in Fig. 1B);
a plurality of pull-down devices (e.g., 130/134; in Fig. 1B); and
a plurality of pass devices (e.g., 142/144; in Fig. 1B);
wherein the wordline driver circuit is configured to provide the voltage supply to the plurality of pass devices (e.g., 200 via 730; in Fig. 7A), and
wherein the charge pump circuit is electrically coupled to the plurality of pull-up devices (e.g., Boost Cam 500; in Figs. 4A, 4B, 5, 7A) and is configured to transition from the second voltage to the voltage supply after a transition from the voltage supply to ground applied to the plurality of pass devices by the wordline driver circuit (see for example in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)).
Regarding claim 8, Sinangil, for example in Figs. 1-9, discloses wherein the charge pump circuit comprises: a multiplexer circuit configured to output the higher second voltage based on the first number of capacitors electrically coupled to the voltage supply (e.g., the switches 412 as considered as multiplexer; in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)).
Regarding claim 9, Sinangil, for example in Figs. 1-9, discloses wherein the charge pump circuit is further configured to adjust the higher second voltage to the third voltage based on a de-selection of capacitors coupled to the voltage supply (in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)).
Regarding claim 10, Sinangil, for example in Figs. 1-9, discloses wherein the charge pump circuit is further configured to transition from the voltage supply to the higher second voltage or to the third voltage prior to a transition from ground to the voltage supply applied to gate terminals of the plurality of pass devices by the wordline driver circuit (see for example in Figs. 4A, 4B, 5, 7A; also, the structure in of the prior art (Sinangil) is substantially identical to the structure of the claim. MPEP 2112.01(I). The manner of operation does not distinguish this apparatus claim from the prior art apparatus. MPEP 2114(II)).
Regarding claim 12, Sinangil, for example in Figs. 1-9, discloses wherein the plurality of pull-up devices comprise a plurality of p-type transistors, and wherein: each of the plurality of p-type transistors comprises a first source/drain (S/D) terminal, a second S/D terminal, and a gate terminal, and one of the first S/D terminal and the second S/D terminal is electrically coupled to the charge pump circuit (see for example in Figs. 4A, 4B, 5, 7A).
Regarding claim 13, Sinangil, for example in Figs. 1-9, discloses wherein the plurality of pull-down devices comprise a plurality of n-type transistors (see for example in Figs. 4A, 4B, 5, 7A).
Regarding claim 14, Sinangil, for example in Figs. 1-9, discloses wherein the plurality of pass devices comprise a plurality of n-type transistors, and wherein: each of the plurality of n-type transistors comprises a first source/drain (S/D) terminal, a second S/D terminal, and a gate terminal, and the gate terminal is electrically coupled to the voltage supply (see for example in Figs. 4A, 4B, 5, 7A).
Allowable Subject Matter
Claims 1-4, 6, 15-19, 21-23 are allowed.
Applicant are reminded that when presenting amendments to claims. In order to be fully responsive, an attempt should be made to point out the patentable novelty (see MPEP 714.04). Additionally, Applicant should point out where and/or how the originally filed disclosure supports the amendment(s) (see MPEP 2163 (II)(A)).
Response to Arguments
Applicant's arguments filed 17 November 2025have been fully considered but are moot because a new ground(s) of rejection is made in view of Sinangil (US 9,208,900 B2).
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
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/THA-O H BUI/Primary Examiner, Art Unit 2825 12/15/2025