Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2824 2825 2827
This examiner grants 88% of resolved cases
Tha-O H. Bui is an examiner in Tech Center 2800 and Art Unit 2824. She has 995 resolved cases, with an allowance rate pct of 88.2. This rate indicates that the majority of applications she reviews result in a patent grant. The median days to allowance for these successful cases is 792, which reflects an efficient timeline for reaching a grant in her art unit. This 792 median days to allowance is a key benchmark.
The interview lift pct of 3.8 suggests that interviews provide a small benefit to the likelihood of allowance. Given that the allowance rate pct is already 88.2, there is limited room for an interview to significantly increase the probability of success. In Art Unit 2824, the 3.8 interview lift pct indicates that the written record is usually sufficient for the 995 resolved cases. This lift is a minor factor.
The 88.2 allowance rate pct and the 792 median days to allowance define a favorable landscape for applicants. The 3.8 interview lift pct shows that while interviews are helpful, they are not always necessary to achieve a grant. Practitioners should use the 995 resolved cases as a reliable guide for expectations in Tech Center 2800. The 792 median days to allowance remains the primary timing guide.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18989553 | MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19011450 | MEMORY DEVICE, MEMORY SYSTEM, AND READ OPERATION METHOD THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 19008419 | HIGH SPEED MEMORY DEVICE WITH DATA MASKING | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18740905 | MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 19000218 | READ PATH BIT-LINE PRECHARGE ARCHITECTURE FOR MULTI-VOLTAGE RAM | Non-Final OA | NVIDIA Corporation |
| 18924115 | MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES | Final Rejection | Micron Technology, Inc. |
| 18787950 | Three-Dimensional Phase-Change Memory Array Operable to Perform Multiplication Accumulation Operations | Non-Final OA | Micron Technology, Inc. |
| 18741633 | THREE-DIMENSIONAL NOR MEMORY DEVICE FOR MULTIPLY-ACCUMULATE OPERATIONS | Final Rejection | Micron Technology, Inc. |
| 19038298 | Novel Bank Design with Differential Bulk Bias in eFuse Array | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18790426 | STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18982579 | DATA RETENTION READ METHOD | Non-Final OA | Sandisk Technologies, Inc. |
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