Tech Center 2800 • Art Units: 2824 2825 2827
This examiner grants 88% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18989553 | MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18612283 | SEMICONDUCTOR MEMORY DEVICE WITH STACKED CHIPS STRUCTURE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 19011450 | MEMORY DEVICE, MEMORY SYSTEM, AND READ OPERATION METHOD THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 19008419 | HIGH SPEED MEMORY DEVICE WITH DATA MASKING | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18974897 | TEMPERATURE-BASED CHARGE PUMP CONTROL | Non-Final OA | Micron Technology, Inc. |
| 18787950 | Three-Dimensional Phase-Change Memory Array Operable to Perform Multiplication Accumulation Operations | Final Rejection | Micron Technology, Inc. |
| 18790426 | STRUCTURE FOR MULTIPLE SENSE AMPLIFIERS OF MEMORY DEVICE | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 19000218 | READ PATH BIT-LINE PRECHARGE ARCHITECTURE FOR MULTI-VOLTAGE RAM | Non-Final OA | NVIDIA Corporation |
| 18953248 | THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY | Non-Final OA | Kioxia Corporation |
| 18740905 | MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18460030 | DATA LATCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE | Final Rejection | Kioxia Corporation |
| 18982579 | DATA RETENTION READ METHOD | Non-Final OA | Sandisk Technologies, Inc. |
| 18980921 | POST-ERASE READ OF DUMMY WORD LINE TO SUSTAIN THE SUB-BLOCK MODE DURING UNSELECTED SUB-BLOCK DISTURB | Non-Final OA | Sandisk Technologies, Inc. |
| 18610368 | MEMORY DEVICE AND OPERATION METHOD THEREOF | Final Rejection | MACRONIX INTERNATIONAL CO., LTD. |
| 18058992 | NON-VOLATILE MEMORY STRUCTURE WITH SINGLE CELL OR TWIN CELL SENSING | Non-Final OA | GlobalFoundries U.S. Inc. |
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