Prosecution Insights
Last updated: April 19, 2026
Application No. 17/847,679

PROCESS FOR MANUFACTURING A VERTICAL CONDUCTION SILICON CARBIDE ELECTRONIC DEVICE AND VERTICAL CONDUCTION SILICON CARBIDE ELECTRONIC DEVICE

Non-Final OA §103
Filed
Jun 23, 2022
Examiner
ENAD, CHRISTINE A
Art Unit
2811
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
STMicroelectronics
OA Round
4 (Non-Final)
84%
Grant Probability
Favorable
4-5
OA Rounds
2y 1m
To Grant
94%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allow Rate
1105 granted / 1312 resolved
+16.2% vs TC avg
Moderate +10% lift
Without
With
+10.1%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 1m
Avg Prosecution
68 currently pending
Career history
1380
Total Applications
across all art units

Statute-Specific Performance

§101
1.5%
-38.5% vs TC avg
§103
61.5%
+21.5% vs TC avg
§102
21.1%
-18.9% vs TC avg
§112
7.7%
-32.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1312 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 21-24 are rejected under 35 U.S.C. 103 as being unpatentable over Okumura et al (US Publication No. 2021/0111251) in view of Utsumi et al (US Publication No. 2021/0217852) and Braganca et al (US Publication No. 2021/0296268). Regarding claim 21, Okumura discloses a process for manufacturing a vertical conduction silicon carbide electronic device Fig 4A-4D, comprising: depositing a metal layer Fig 4B, 110 on a wafer Fig 4B, 1 comprising silicon carbide ¶0047, wherein the metal layer forms a contact face Fig 4B ¶0038, 0049; and laser annealing the contact face with a laser beam to cause the metal layer to react with the wafer and form a silicide layer Fig 4C ¶0051, wherein the laser beam has a footprint on the contact face having a size; wherein laser annealing the contact face comprises irradiating a first portion of the contact face Fig 4A-4B, moving the footprint of the laser beam by a step smaller than the size of the footprint and irradiating a second portion of the contact face Fig 5A-5B, wherein the first portion and the second portion of the contact face at least partially overlap Fig 5A-5B. Okumura discloses all the limitations but silent on having the polygonal shape. Whereas Utsumi discloses wherein the footprint on the contact face having a specific shape Fig 5A. While Braganca discloses a polygonal shape Fig 5A-5C. Okumura, Utsumi and Braganca are analogous art because they are directed to laser annealing and one of ordinary skill in the art would have had a reasonable expectation of success to modify Okumura because they are from the same field of endeavor. Therefore it would have been obvious to one having ordinary skill of the art before the effective filing date of the claimed invention to modify the footprint of Okumura and incorporate the teachings of Utsumi or Braganca since such a modification would have involved a mere change in the shape of a component. A change in shape is generally recognized as being within the level of ordinary skill in the art. In reDailey, 357 F.2d 669, 149 USPQ 47 (CCPA 1966). Regarding claim 22, Utsumi discloses wherein laser annealing comprises scanning the entire contact face with the laser beam using a step-and-repeat type of scanning, and wherein the step is comprised between one tenth and one half of the size of the polygonal shape of the beam footprint Fig 5A-9C. It would have been obvious to one having ordinary skill of the art before the effective filing date of the claimed invention to modify the teachings of Okumura, since it has been held that discovering an optimum value of a result effective variable involves only routine skill in the art. In re Boesch, 617 F. 2d 272, 205 USPQ (CCPA 1980). Regarding claim 23, Utsumi discloses wherein laser annealing the contact face forms a roughness pattern on the contact face comprising a grid formed by horizontal and vertical stripes having a first roughness and regions delimited by the horizontal and vertical stripes of the grid having a second roughness, where the first roughness is greater than the second roughness Fig 5A-9C. It would have been obvious to one having ordinary skill of the art before the effective filing date of the claimed invention to modify the teachings of Okumura, since it has been held that discovering an optimum value of a result effective variable involves only routine skill in the art. In re Boesch, 617 F. 2d 272, 205 USPQ (CCPA 1980). Regarding claim 24, Braganca discloses the footprint has a polygonal shape Fig 5A-5C, Braganca discloses all the limitations but silent on the dimensions. It would have been obvious to one having ordinary skill in the art before the effective filing date of the claimed invention to modify the specific dimensions, since it has been held that where the general conditions of a claim are disclosed in the prior art, discovering optimum or workable ranges involves only routine skill in the art. In re Aller, 105 USPQ 233 (1955). Response to Arguments Applicant’s arguments, see Page 3, filed 2/3/2026, with respect to the rejection(s) of claim 21 under USC 103 have been fully considered and are persuasive. Therefore, the rejection has been withdrawn. However, upon further consideration, a new ground(s) of rejection is made in view of Okumura et al (US Publication No. 2021/0111251), Utsumi et al (US Publication No. 2021/0217852) and Braganca et al (US Publication No. 2021/0296268). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to CHRISTINE A ENAD whose telephone number is (571)270-7891. The examiner can normally be reached Monday-Friday, 7:30 am -4:30 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Lynne Gurley can be reached on 571 272 1670. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /CHRISTINE A ENAD/ Primary Examiner, Art Unit 2811
Read full office action

Prosecution Timeline

Jun 23, 2022
Application Filed
Mar 11, 2025
Non-Final Rejection — §103
Jun 13, 2025
Response Filed
Aug 07, 2025
Final Rejection — §103
Oct 06, 2025
Response after Non-Final Action
Oct 22, 2025
Request for Continued Examination
Oct 30, 2025
Response after Non-Final Action
Nov 06, 2025
Non-Final Rejection — §103
Feb 03, 2026
Response Filed
Mar 30, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604723
Metal Capping Layer for Reducing Gate Resistance in Semiconductor Devices
2y 5m to grant Granted Apr 14, 2026
Patent 12593498
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
2y 5m to grant Granted Mar 31, 2026
Patent 12588244
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
2y 5m to grant Granted Mar 24, 2026
Patent 12588270
METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS
2y 5m to grant Granted Mar 24, 2026
Patent 12581923
METHOD FOR REMOVING EDGE OF SUBSTRATE IN SEMICONDUCTOR STRUCTURE
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

4-5
Expected OA Rounds
84%
Grant Probability
94%
With Interview (+10.1%)
2y 1m
Median Time to Grant
High
PTA Risk
Based on 1312 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month