DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant’s election without traverse of Species I, with claims 21-29 indicated by Applicant to read thereon, in the reply filed on 9/5/2025 is acknowledged.
Claims 30-40 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected species, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 9/5/2025.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 21-29 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Swee Seng, US Pub. No. 2006/0022323 A1.
Re claim 21. Swee Seng discloses an apparatus comprising: a silicon substrate 120 (e.g., fig. 3A, paragraph 61) or semiconductor substrate 130, 230A (e.g., figs. 3D-5, paragraphs 45, 65, 82); a silicon die 130, 130A, 130B, 230B (e.g., figs. 3D-5 and paragraphs 45, 76, 82); and a spacer 126, 150, 250 (e.g., figs. 3D-5 and paragraphs 47, 62, 64, 76, 83) disposed between the silicon die 130, 130A, 130B, 230B and the semiconductor substrate 120, 130, 230A, wherein the spacer comprises an organic compound (e.g., polyimide, resin, epoxy, paragraphs 47, 62, 64, 76, 83; which is the same material as instant claim 22), and wherein the spacer is provided to reduce a coefficient of thermal expansion (CTE) mismatch between the semiconductor substrate and silicon die due the it’s intrinsic properties of the material (e.g., organic compound such as polyimide, resin, epoxy), see figs. 1-8B and cols. 1-12 for more details. Furthermore, it should be noted that a recitation of the intended use and/or function of the claimed invention must result in a structural difference between the claimed invention and the prior art in order to patentably distinguish the claimed invention from the prior art. If the prior art structure is capable of performing the intended use and/or function, then it meets the claim
Re claim 22. The apparatus of claim 21, wherein the organic compound comprises an epoxy mold compound (EMC) or an organic solder mask material (e.g., polyimide, resin, epoxy, paragraphs 47, 62, 64, 76, 83).
Re claim 23. The apparatus of claim 21, wherein the silicon die 130A includes a film layer (e.g.. a bottom portion of 130A (fig. 3B) or the dielectric and/or adhesive layer (figs. 3F, 4 and 5)), and wherein the film layer is in contact with the spacer 126 (fig. 3B).
Re claim 24. The apparatus of claim 21, wherein the silicon die 130B, 230B (figs. 3D-F, 5, 130 in Fig. 4) is a first silicon die 130B, 230B (figs. 3D-F, 5, upper die 130 in Fig. 4), and the apparatus further comprises a second silicon die 130A, 230A (figs. 3D-F, 5; lower die 130 in Fig. 4) in contact with the semiconductor substrate (e.g., the portion(s) under the second die).
Re claim 25. The apparatus of claim 24, wherein the second silicon die 130A, 230A (figs. 3D-F, 5; lower die 130 in Fig. 4) is free from contact with the first silicon die 130B, 230B (figs. 3D-F, 5, upper die 130 in Fig. 4) or the EMC spacer.
Re claim 26. The apparatus of claim 24, wherein the apparatus further comprises a third silicon die (middle die 130 in fig. 4) disposed between first silicon die (upper die 130 in fig. 4) and the second silicon die (lower die 130 in fig. 4).
Re claim 27. The apparatus of claim 24, wherein each respective silicon die includes a respective film layer (e.g., a lower portion of the of each die 130 or adhesive/insulating/passivation layer in fig. 4).
Re claim 28. The apparatus of claim 21, wherein the silicon die is a first silicon die (middle die 130 in fig. 4), wherein a first side of the first silicon die is in contact with the spacer (lower spacer, i.e., spacer between lower and middle die 130 in fig. 4), and wherein a second side of the first silicon die is in contact with a second silicon die (upper die 130 in fig. 4).
Re claim 29. The apparatus of claim 28, wherein the first silicon die (middle die 130 in fig. 4) includes a first film layer (fig. 4, e.g., layer between middle die 130 and lower spacer) on its first side contacting the spacer (fig. 4, e.g., lower spacer), and wherein the second silicon die (upper die 130 in fig. 4) includes a second film layer (fig. 4, e.g., layer between upper die 130 and upper spacer) in contact with second side of the first silicon die (middle die 130 in fig. 4).
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to JACK CHEN whose telephone number is (571)272-1689. The examiner can normally be reached Monday to Friday, 8am to 4pm.
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/JACK S CHEN/Primary Examiner, Art Unit 2893