Prosecution Insights
Last updated: May 29, 2026
Application No. 17/970,061

MATERIAL FOR FORMING FILLING FILM FOR INHIBITING SEMICONDUCTOR SUBSTRATE PATTERN COLLAPSE, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE

Final Rejection §103
Filed
Oct 20, 2022
Priority
Nov 09, 2021 — JP 2021-182846
Examiner
EOFF, ANCA
Art Unit
1722
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Shin-Etsu Chemical Co. Ltd.
OA Round
2 (Final)
80%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
91%
With Interview

Examiner Intelligence

Grants 80% — above average
80%
Career Allowance Rate
992 granted / 1241 resolved
+14.9% vs TC avg
Moderate +11% lift
Without
With
+11.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 8m
Avg Prosecution
31 currently pending
Career history
1280
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
84.4%
+44.4% vs TC avg
§102
7.7%
-32.3% vs TC avg
§112
5.1%
-34.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1241 resolved cases

Office Action

§103
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claims 1-18 are pending, with claims 10-18 withdrawn from consideration as being directed to non-elected inventions. The foreign priority application No.2021-182846 filed on November 09, 2021 in Japan has been received and it is acknowledged. Specification The following guidelines illustrate the preferred layout for the specification of a utility application. These guidelines are suggested for the applicant’s use. Arrangement of the Specification As provided in 37 CFR 1.77(b), the specification of a utility application should include the following sections in order. Each of the lettered items should appear in upper case, without underlining or bold type, as a section heading. If no text follows the section heading, the phrase “Not Applicable” should follow the section heading: (a) TITLE OF THE INVENTION. (b) CROSS-REFERENCE TO RELATED APPLICATIONS. (c) STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT. (d) THE NAMES OF THE PARTIES TO A JOINT RESEARCH AGREEMENT. (e) INCORPORATION-BY-REFERENCE OF MATERIAL SUBMITTED ON A READ-ONLY OPTICAL DISC, AS A TEXT FILE OR AN XML FILE VIA THE PATENT ELECTRONIC SYSTEM. (f) STATEMENT REGARDING PRIOR DISCLOSURES BY THE INVENTOR OR A JOINT INVENTOR. (g) BACKGROUND OF THE INVENTION. (1) Field of the Invention. (2) Description of Related Art including information disclosed under 37 CFR 1.97 and 1.98. (h) BRIEF SUMMARY OF THE INVENTION. (i) BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S). (j) DETAILED DESCRIPTION OF THE INVENTION. (k) CLAIM OR CLAIMS (commencing on a separate sheet). (l) ABSTRACT OF THE DISCLOSURE (commencing on a separate sheet). (m) SEQUENCE LISTING. (See MPEP § 2422.03 and 37 CFR 1.821 - 1.825). A “Sequence Listing” is required on paper if the application discloses a nucleotide or amino acid sequence as defined in 37 CFR 1.821(a) and if the required “Sequence Listing” is not submitted as an electronic document either on read-only optical disc or as a text file via the patent electronic system. The specification of the instant application needs to be amended to recite under the heading (b) CROSS-REFERENCE TO RELATED APPLICATIONS that the instant application claims benefit of the foreign priority application No.2021-182846 filed on November 09, 2021 in Japan. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-9 are rejected under 35 U.S.C. 103 as being unpatentable over Nomura et al. (JP 2009-014816A, with machine translation provided by the applicant on September 09, 2025) in view of Aqad et al. (US 2019/0202955) and in further view of Kim et al. (US 2008/0070161) and Hashimoto et al. (US 2017/0315445). With regard to claims 1 and 2, Nomura et al. teach a composition for forming a resist underlayer comprising only the resin (A-1) and propylene glycol monomethyl acetate solvent (B)(Example 1 in par.0117). The propylene glycol monomethyl acetate solvent (B) is the organic solvent (C) in claim 1. The composition in Example 1 of Normura et al. does not comprise an acid generator, as required in claim 1 of the instant application. The resin (A-1) is obtained by reacting a 1-naphthol/formaldehyde condensation resin with propargyl bromide, and the resin has an alkynyloxy introduction rate of 90mol% (par.0114). The units wherein alkynyloxy groups are not introduced are units of formula (1) in claim 1, wherein m=0, n=1, p=1, and X is a -CH2- group (divalent organic group having 1 carbon atom). The repeating units wherein alkynyloxy groups are introduced are repeating units of formula: PNG media_image1.png 96 226 media_image1.png Greyscale (par.0054), and are repeating units of formula (3) in claim 2, wherein m=0, n=1, p=1, R03 is an unsaturated monovalent organic group of 3 carbon atoms, and X is a -CH2- group (divalent organic group having 1 carbon atom). Nomura et al. fail to teach that the ratio Mw/Mn of the resin (A-1). Aqad et al. teach underlayer compositions (par.0006), and further teach that the polymers used in underlayer compositions have a polydispersity (ratio Mw/Mn) of less than 3.0 (par.0102). Additionally, it is well-known in the art that the polydispersity (ratio Mw/Mn) of a polymer determines the physical properties of a layer comprising the polymer (see par.0027 of Kim et al.). Therefore, it would have been obvious to one of ordinary skill in the art before the filing date of the claimed invention to obtain the resin (A-1) of Nomura et al. with a polydispersity (ratio Mw/Mn) of less than 3.0 in order to provide the resist underlayer with the desired physical properties. This range overlaps the range of 2.5-9 in claim 1 of the instant application. Nomura et al. further teach that the resist underlayer composition may comprise a crosslinker (par.0062), but fail to teach the compound (B) of formula (2) in claim 1. Hashimoto et al. teach a resist underlayer film-forming composition for lithography process (abstract). The resist underlayer film-forming composition comprises a polymer (abstract), and may also comprise a crosslinker (par.0035). The crosslinker may be a crosslinker with high heat resistance which comprises an aromatic ring and may be represented by one of the formulas: PNG media_image2.png 134 396 media_image2.png Greyscale PNG media_image3.png 132 402 media_image3.png Greyscale PNG media_image4.png 200 386 media_image4.png Greyscale (par.0036, par.0039). Therefore, it would have been obvious to one of ordinary skill in the art before the filing date of the claimed invention to use the crosslinkers of formulas (6-23), (6-24), and (6-27) as crosslinker in the resist underlayer composition of modified Nomura, in order to take advantage of their high heat resistance. The crosslinker of formula (6-23) is a compound (B) of formula (2) wherein Q is a single bond, q=2, and R02 is a methyl group. The crosslinker of formula (6-24) is a compound (B) of formula (2) wherein Q is a hydrocarbon group, q=2, and R02 is a methyl group. The crosslinker of formula (6-27) is a compound (B) of formula (2) wherein Q is a hydrocarbon group, q=3, and R02 is a methyl group. Hashimoto et al. further teach that a crosslinker may be used in an amount of 2 parts by weight per 100 parts by weight of the resin (Example 2 in par.0079, Example 3 in par.0080). This range includes the range for the component (B) in claim 1. Therefore, the composition of Nomura modified by Aqad, Kim, and Hashimoto is equivalent to the material in claims 1 and 2. The limitation of claim 1 “for forming a filling film for inhibiting semiconductor substrate pattern collapse” shows an intended use and adds no patentable weight to the claim. With regard to claim 3, the repeating units wherein alkynyloxy groups are introduced are repeating units of formula: PNG media_image1.png 96 226 media_image1.png Greyscale (par.0054), and are repeating units of formula (3) wherein R03 is represented by the formula PNG media_image5.png 26 114 media_image5.png Greyscale , RA is -CH2-(divalent organic group having 1 carbon atom) and RB is a hydrogen atom. With regard to claim 4, the resin (A-1) obtained from reacting a 1-naphthol/formaldehyde condensation resin with propargyl bromide, and having alkynyloxy introduction rate of 90mol% (par.0114) is a resin wherein a=10 and b=90. The coefficients are within the claimed ranges. With regard to claims 5 and 6, Nomura et al. fail to teach that the composition comprises a high-boiling point solvent. Hashimoto et al. teach that the composition for forming a resist underlayer film may comprise a solvent, and the examples of solvents include propylene glycol monomethyl ether acetate and N-methyl pyrrolidone (par.0047). Therefore, it would have been obvious to one of ordinary skill in the art before the filing date of the claimed invention to use N-methyl pyrrolidone in the composition of modified Nomura, because this solvent is functionally equivalent to propylene glycol monomethyl ether acetate in Example 1 in Nomura et al. N-methyl pyrrolidone is a solvent with a boiling point of 202-204oC (see the attached “N-Methyl-2-pyrrolidone”). With regard to claim 7, Nomura et al. further teach that the composition may comprise a surfactant for improving the coating property, striation, wettability, developability (par.0076, par.0081). With regard to claims 8 and 9, the references above do not teach a metal impurity. Therefore, it is considered that the amount of metal impurities is 0, and this value is within the claimed range. Response to Arguments Applicant’s arguments with respect to claims 1-9 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. The examiner would like to note that the rejection of claims 1-9 under 35 U.S.C. 103 as being unpatentable over Nomura et al. (JP 2009-014816A, with machine translation provided by the applicant on September 09, 2025) in view of Aqad et al. (US 2019/0202955) and in further view of Kim et al. (US 2008/0070161) and Matsumura et al. (US 2016/0314984) is withdrawn after the applicant’s amendment to claim 1. However, new grounds of rejection for claims 1-9 are presented in paragraphs 5 and 6 above. Conclusion Applicant's amendment necessitated the new grounds of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANCA EOFF whose telephone number is (571)272-9810. The examiner can normally be reached Mon-Fri 10am-6:30pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Niki Bakhtiari can be reached at (571)272-3433. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANCA EOFF/Primary Examiner, Art Unit 1722
Read full office action

Prosecution Timeline

Oct 20, 2022
Application Filed
Jan 16, 2026
Non-Final Rejection mailed — §103
Apr 13, 2026
Response Filed
Apr 29, 2026
Final Rejection mailed — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
80%
Grant Probability
91%
With Interview (+11.3%)
2y 8m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 1241 resolved cases by this examiner. Grant probability derived from career allowance rate.

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