Prosecution Insights
Last updated: April 19, 2026
Application No. 17/993,565

Methods And Systems For Data Driven Parameterization And Measurement Of Semiconductor Structures

Non-Final OA §102
Filed
Nov 23, 2022
Examiner
DINH, PAUL
Art Unit
2851
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Kla Corporation
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
2y 7m
To Grant
93%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allow Rate
936 granted / 1047 resolved
+21.4% vs TC avg
Minimal +4% lift
Without
With
+3.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
19 currently pending
Career history
1066
Total Applications
across all art units

Statute-Specific Performance

§101
16.6%
-23.4% vs TC avg
§103
8.6%
-31.4% vs TC avg
§102
39.4%
-0.6% vs TC avg
§112
23.4%
-16.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1047 resolved cases

Office Action

§102
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . OFFICE ACTION This is a response to the election filed on 11/17/2025. The Examiner acknowledges: the election group 2 (claims 10-20), without traverse; The withdrawal of group 1 (claims 1-9); Applicants reserve the right to seek examination of claims in any unelected claims associated with Group 1 in a divisional application; and Upon allowance, Applicant reserves the right to rejoin of any unelected claims associated with Group 1. (The Applicant is advised that “MPEP § 821.04 indicates that, in order to be eligible for rejoinder, a claim to a nonelected invention must depend from or otherwise require all the limitations of an allowable claim”) Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) The claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) The claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 10 and 18-19 are rejected under 35 U.S.C. 102(a) (2) being anticipated by the prior art of record Houben (US 2024/0054669) Regarding claim 10, the prior art discloses: A metrology system (see one or more of par 2, 6, 45-46, 54, 59-60, 74, 82-83, 92, 98-99, 107-110…) comprising: an illumination subsystem (illumination subsystem is one or more of: illumination/radiation optical system, beam optics, radiation beam/system, lithographic projection, SEM, projection optics, electron beam apparatus, optical metrology/scatterometry tool, e-beam generator, disclosed in one or more of par 7, 45-46, 52-53, 55, 98-99, 179, 203, 209, 216, 223, 225, 231, 234, 235, 237) configured to illuminate a semiconductor structure with an amount of energy at a measurement site (see one or more of summary and/or one or more of fig 1-5, 7-8, 11-13, 16-17, 19-21 and corresponding text, i.e., the followings: Semiconductor structure is one or more of: critical dimension structure/ device/ object, and/or one or more of substrate, three-dimension (3D) structure, wafer, die, chip, IC, resist layer, as disclosed in the prior art. Amount of energy measured/quantified/metrics is one or more of: dose, focus, illumination/radiation source/distribution, angles/electrons of beams, x-ray lithography/wave length, electromagnetic spectrum, scattered energy, shape radiation, SEM intensity profile/values/distribution, radiation beam/pulses, laser source, extreme ultra violet as disclosed in the prior art); a detector (one or more of SEM, AFM, optical scatterometry/metrology tool, contour model, gradient intensity profile, image simulated metrology/simulator, optical capture metrology too disclosed in one or more of par 7, 9, 45, 54-55, 57, 62, 74, 78, 82, 98-99, 104, 107, 110, 120, 144, 191, 197, 238) configured to detect an amount of measurement data associated with measurements of the semiconductor structure in response to the amount of energy; and a computing system (see one or more of computer, processors, trained model processor, processing unit, computing device/system in one or more of par 12, 83, 179, 183, 188-189, 192 fig 18) configured to: estimate a value of at least one latent variable of a set of latent variables (see par 53, 108, 178, 185) characterizing the semiconductor structure in a non-observable (non-observable is inherent because latent variable are referred to as non-observable variable or capturing latent is non-observable property in data and/or non-observable variable because latent variable are inferred variable that represent non-observable features hidden in input data) mathematical space based on a fitting of a trained measurement model (see one or more of par 7, 9, 20, 24, 26, 30-36 and/or one or more of fig 3, 5, 6, 8, 10-15) to the amount of measurement data; and transform (see encoder-decoder, conversion function, transformation operation in one or more of par 61-64, 72, 82, 105, 120, 127, 130, 139, 146, 238) the value of the at least one latent variable to a value of at least one observable geometric parameter of interest (see observed metrology height/ depth, observed data/map/structure, observed shape/image, observed extracted data in one or more of par 9, 28, 92, 93, 97-110, 114-115, 127, 238) characterizing the semiconductor structure. (Claim 18) wherein the illumination subsystem and the detector comprise an optical metrology system, an x-ray based metrology system, or an electron beam based metrology system (see one or more of par 7, 38, 45-46, 52-59, 98-99, 104-105, 110, 182, 235-238 ) (Claim 19) recite similar subject matter and rejected for the same reason. Allowable Subject Matter Claims 11-17 and 20 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Claims 11-17 and 20 would be allowable because the prior art of record does not teach or suggest the limitations in claim 11 and similarly recited claim 20. Correspondence Information Any inquiry concerning this communication or earlier communications from the examiner should be directed to PAUL DINH whose telephone number is 571-272-1890. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s Supervisor, Jack Chiang can be reached on 571-272-7483. The fax number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197(toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /PAUL DINH/Primary Examiner, Art Unit 2851
Read full office action

Prosecution Timeline

Nov 23, 2022
Application Filed
Dec 15, 2022
Response after Non-Final Action
Dec 15, 2025
Non-Final Rejection — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
93%
With Interview (+3.9%)
2y 7m
Median Time to Grant
Low
PTA Risk
Based on 1047 resolved cases by this examiner. Grant probability derived from career allow rate.

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