Prosecution Insights
Last updated: April 19, 2026
Application No. 17/996,063

METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR SUPPRESSING OCCURRENCE OF CRACKS IN ALUMINUM NITRIDE LAYER

Non-Final OA §102§103§112
Filed
Oct 12, 2022
Examiner
CHEN, JACK S J
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Toyota Tsusho Corporation
OA Round
1 (Non-Final)
76%
Grant Probability
Favorable
1-2
OA Rounds
2y 10m
To Grant
82%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allow Rate
432 granted / 565 resolved
+8.5% vs TC avg
Moderate +6% lift
Without
With
+5.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 10m
Avg Prosecution
33 currently pending
Career history
598
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
30.0%
-10.0% vs TC avg
§102
34.2%
-5.8% vs TC avg
§112
26.3%
-13.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 565 resolved cases

Office Action

§102 §103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I in the reply filed on 5/14/2025 is acknowledged. Claims 7-12 and 20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected invention, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 5/14/2025. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 2-5 and 13-19 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Re claim 2, lines 5-6, the phrase “a strained layer removal step of removing a strained layer introduced in the through hole formation step” is unclear and indefinite. And/or it does not positively recite the active processing steps. For example, at least the active step for forming the strained layer is lacking. How is the strained layer introduced in the through hole formation step etc.? The remaining claims are rejected for depending from the above rejected claim 2. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim 1 is rejected under 35 U.S.C. 102(a)(1) as being anticipated by BRUNO GHYSELEN, WO 2019186266 A2. Re claim 1, GHYSELEN discloses a method for manufacturing an aluminum nitride substrate, comprising an embrittlement processing step (e.g., fig. 2, through implantation to form an embrittlement zone etc.) of reducing strength of a silicon carbide underlying substrate 20’ (fig. 2); and a crystal growth step of forming an aluminum nitride layer 300’ (e.g., fig. 2) on the silicon carbide underlying substrate, see figs. 1-5 and pages 1-15 for more details. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim 6 is rejected under 35 U.S.C. 103 as being unpatentable over BRUN GHYSELEN, WO 2019186266 A2 in view of Schlesser et al., US Pub. No. 2016/0284545 A1. Re claim 6, GHYSELEN disclosed above, however, GHYSELEN does not explicitly show that the crystal growth step is a step of growing by a physical vapor transport method. Using the physical vapor transport method for forming AlN has been well-known in semiconductor art. For example, Schlesser et al. teach a method for forming a semiconductor device, which comprises forming the AlN by using the PVT method (e.g., claim1, paragraph 3 and/or 8). Therefore, the subject matter as a whole would have been obvious to one having ordinary skill in the art before the invention was made to select any suitable processes (e.g., PVT) for forming the AlN in order to provide high crystalline quality, low defect & impurity levels and/or fast growth rates etc. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to JACK CHEN whose telephone number is (571)272-1689. The examiner can normally be reached Monday to Friday, 8am to 4pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara J. Green can be reached at (571)270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /JACK S CHEN/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Oct 12, 2022
Application Filed
May 14, 2025
Response after Non-Final Action
Jan 13, 2026
Non-Final Rejection — §102, §103, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
76%
Grant Probability
82%
With Interview (+5.9%)
2y 10m
Median Time to Grant
Low
PTA Risk
Based on 565 resolved cases by this examiner. Grant probability derived from career allow rate.

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