Prosecution Insights
Last updated: May 29, 2026
Application No. 18/088,870

PLASMA PROCESSING APPARATUS AND ELECTROSTATIC CHUCK MANUFACTURING METHOD

Non-Final OA §102
Filed
Dec 27, 2022
Priority
Dec 27, 2021 — JP 2021-213275 +1 more
Examiner
CROWELL, ANNA M
Art Unit
1716
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Tokyo Electron Limited
OA Round
1 (Non-Final)
45%
Grant Probability
Moderate
1-2
OA Rounds
5m
Est. Remaining
76%
With Interview

Examiner Intelligence

Grants 45% of resolved cases
45%
Career Allowance Rate
192 granted / 429 resolved
-20.2% vs TC avg
Strong +31% interview lift
Without
With
+30.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 10m
Avg Prosecution
25 currently pending
Career history
469
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
78.8%
+38.8% vs TC avg
§102
4.2%
-35.8% vs TC avg
§112
0.7%
-39.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 429 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Invention I, Group 1-Species I, Figure 3, Group 2-Species A, Figure 4 in the reply filed on February 3, 2026 is acknowledged. Claims 3, 7-16, and 19 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected inventions and species, there being no allowable generic or linking claim. Note. Claims 3 and 7-17 are directed to the non-elected species of Group 1-Species II-III and Group 2-Species B-C. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-2, 4-6 and 17-18 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Yokogawa et al. (U.S. 2015/0243486). Referring to Figure 1 below and Figure 2, and paragraphs [0027]-[0044], Yokogawa et al. disclose a plasma processing apparatus comprising: a plasma processing chamber 10 (par.[0027]); a substrate support 2 disposed in the plasma processing chamber (par.[0028]), the substrate support including: a dielectric member 14, 22, 23, 25 having a substrate supporting surface (pars.[0037], [0042]-[0044]); a first filter 32 disposed in the dielectric member, the first filter having a first terminal and a second terminal (par.[0038]); and a first electrode 15 disposed in the dielectric member, the first electrode being electrically connected to the first terminal (par.[0037]); an RF generator 20 coupled to the plasma processing chamber and configured to generate an RF signal par. [0035]); and a first DC generator 17 electrically connected to the second terminal and configured to generate a DC signal (pars.[0037]-[0040]). PNG media_image1.png 741 922 media_image1.png Greyscale With respect to claim 2, the plasma processing apparatus of Yokogawa et al. further includes wherein the first electrode includes an electrostatic chuck electrode 15 (par.[0037]). With respect to claim 4, the plasma processing apparatus of Yokogawa et al. further includes wherein the first filter is a low pass filter 32 (pars.[0038]-[0040]). With respect to claim 5, the plasma processing apparatus of Yokogawa et al. further includes wherein the first filter includes a first resistance element 32 (pars.[0038]-[0040]). With respect to claim 6, the plasma processing apparatus of Yokogawa et al. further includes wherein the first resistance element 32 is disposed to be perpendicular to the substrate supporting surface (Fig. 1 above). With respect to claim 17, the plasma processing apparatus of Yokogawa et al. further comprising: a second DC generator 17 configured to generate a DC signal, wherein the dielectric member 14, 22, 23, 25 has a ring supporting surface around the substrate supporting surface, the substrate support includes: a second filter 32 disposed in the dielectric member and having a fifth terminal and a sixth terminal; and a second electrode 15 disposed in the dielectric member and electrically connected to the fifth terminal, and the second DC generator is electrically connected to the sixth terminal (Fig. 1 above, pars.[0038]-[0040]). With respect to claim 18, he plasma processing apparatus of Yokogawa et al. further includes further comprising: an RF electrode 2a electrically connected to the RF generator 20, wherein the RF electrode includes a metal member, and the metal member is bonded to the dielectric member 14, 22, 23, 25 (Fig. 1, par.[0035]). Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Dhindsa et al.‘420, Sill et al.’018, Tsuji et al.’709, Kofuji et al.’823, Koshimizu’524, Yokogawa et al.’657, and Sakiyama et al.’625 teach a first electrode within a substrate support and connected to a first filter. Kapoor et al.’625 teach a filter within a dielectric. Ishikawa et al. teach an electrostatic chuck. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Michelle CROWELL whose telephone number is (571)272-1432. The examiner can normally be reached Monday-Thursday 10:00am-6:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Parviz Hassanzadeh can be reached at 571-272-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Michelle CROWELL/Examiner, Art Unit 1716 /SYLVIA MACARTHUR/Primary Examiner, Art Unit 1716
Read full office action

Prosecution Timeline

Dec 27, 2022
Application Filed
May 15, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12620563
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
4y 11m to grant Granted May 05, 2026
Patent 12603255
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
5y 0m to grant Granted Apr 14, 2026
Patent 12604708
ATOMIC LAYER ETCH SYSTEMS FOR SELECTIVELY ETCHING WITH HALOGEN-BASED COMPOUNDS
4y 11m to grant Granted Apr 14, 2026
Patent 12555741
MAGNETIC HOUSING SYSTEMS
3y 1m to grant Granted Feb 17, 2026
Patent 12548739
PLASMA SOURCE FOR SEMICONDUCTOR PROCESSING
2y 11m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
45%
Grant Probability
76%
With Interview (+30.8%)
3y 10m (~5m remaining)
Median Time to Grant
Low
PTA Risk
Based on 429 resolved cases by this examiner. Grant probability derived from career allowance rate.

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