Prosecution Insights
Last updated: May 29, 2026
Application No. 18/099,097

SEMICONDUCTOR MANUFACTURING METHOD

Non-Final OA §112
Filed
Jan 19, 2023
Priority
Oct 20, 2022 — provisional 63/417,793
Examiner
ISAAC, STANETTA D
Art Unit
2898
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company Ltd.
OA Round
2 (Non-Final)
85%
Grant Probability
Favorable
2-3
OA Rounds
0m
Est. Remaining
48%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
816 granted / 955 resolved
+17.4% vs TC avg
Minimal -38% lift
Without
With
+-37.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
26 currently pending
Career history
1010
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
63.5%
+23.5% vs TC avg
§102
34.7%
-5.3% vs TC avg
§112
1.5%
-38.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 955 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-9 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. In claim 1, it is indefinite whether the first bonding film and the first stressing film are formed on two opposite sides of the first semiconductor element, or as stated in claim 6, forming the first bonding film and the first stressing film on the first semiconductor element to include being formed on the same side. The following is a quotation of 35 U.S.C. 112(d): (d) REFERENCE IN DEPENDENT FORMS.—Subject to subsection (e), a claim in dependent form shall contain a reference to a claim previously set forth and then specify a further limitation of the subject matter claimed. A claim in dependent form shall be construed to incorporate by reference all the limitations of the claim to which it refers. The following is a quotation of pre-AIA 35 U.S.C. 112, fourth paragraph: Subject to the following paragraph [i.e., the fifth paragraph of pre-AIA 35 U.S.C. 112], a claim in dependent form shall contain a reference to a claim previously set forth and then specify a further limitation of the subject matter claimed. A claim in dependent form shall be construed to incorporate by reference all the limitations of the claim to which it refers. Claim 6-8 are rejected under 35 U.S.C. 112(d) or pre-AIA 35 U.S.C. 112, 4th paragraph, as being of improper dependent form for failing to further limit the subject matter of the claim upon which it depends, or for failing to include all the limitations of the claim upon which it depends. In claim 1, the step of forming a first semiconductor element with a first bonding film and a first stressing film, wherein the first bonding film and the first stressing film are formed on two opposite sides of the first semiconductor element. It is improper dependent form for failing to further limit the first bonding on the first semiconductor element; forming the first stressing film on the first semiconductor element, since both films are already formed on opposite sides of the first semiconductor element. Applicant may cancel the claim(s), amend the claim(s) to place the claim(s) in proper dependent form, rewrite the claim(s) in independent form, or present a sufficient showing that the dependent claim(s) complies with the statutory requirements. REASONS FOR ALLOWANCE Claims 10-20 are allowed over the prior art of record. The following is an examiner’s statement of reasons for allowance: The closest prior art of record and to the examiner’s knowledge does not suggest or render obvious a semiconductor manufacturing method, particularly characterized by wherein the first convex surface is formed by etching the first bonding film and a mask bump formed on the first bonding film, as detailed in claim 10. Claims 11-16 and 20 depend from claim 10. The closest prior art of record and to the examiner’s knowledge does not suggest or render obvious a semiconductor manufacturing method, particularly characterized by wherein the first bonding film having a first concave surface is fully formed on one side of the first semiconductor element, as detailed in claim 17. Claims 18 and 19 depend from claim 17 Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.” Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to STANETTA D ISAAC whose telephone number is (571)272-1671. The examiner can normally be reached M-F 10-6. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Leonard Chang can be reached at 571-270-3691. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /STANETTA D ISAAC/Examiner, Art Unit 2898 March 8, 2026
Read full office action

Prosecution Timeline

Jan 19, 2023
Application Filed
Jul 30, 2025
Non-Final Rejection mailed — §112
Nov 10, 2025
Response Filed
Mar 27, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12642060
HEAT SPREADING ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES
5y 5m to grant Granted May 26, 2026
Patent 12628624
MANUFACTURING METHOD FOR FORMING SEMICONDUCTOR DEVICE
4y 2m to grant Granted May 12, 2026
Patent 12616039
ELECTRONIC SYSTEM HAVING INTERMETALLIC CONNECTION STRUCTURE WITH CENTRAL INTERMETALLIC MESH STRUCTURE AND MESH-FREE EXTERIOR STRUCTURES
3y 9m to grant Granted Apr 28, 2026
Patent 12604706
APPARATUS INCLUDING TRANSPARENT MATERIAL FOR TRANSPARENT PROCESS PERFORMANCE AND METHOD USING THEREOF
4y 2m to grant Granted Apr 14, 2026
Patent 12604715
ISOLATION STRUCTURE AND MEMORY DEVICE
2y 0m to grant Granted Apr 14, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

2-3
Expected OA Rounds
85%
Grant Probability
48%
With Interview (-37.6%)
2y 5m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 955 resolved cases by this examiner. Grant probability derived from career allowance rate.

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