Office Action Predictor
Last updated: April 15, 2026
Application No. 18/105,586

FLIP-CHIP FIELD EFFECT TRANSISTOR LAYOUTS AND STRUCTURES

Non-Final OA §102§103
Filed
Feb 03, 2023
Examiner
HARRISTON, WILLIAM A
Art Unit
2899
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Wolfspeed, INC.
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
2y 2m
To Grant
99%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allow Rate
941 granted / 1054 resolved
+21.3% vs TC avg
Strong +20% interview lift
Without
With
+20.0%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
19 currently pending
Career history
1073
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
48.0%
+8.0% vs TC avg
§102
43.6%
+3.6% vs TC avg
§112
5.4%
-34.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1054 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Species A, Claims 1-3 and 5-8 in the reply filed on 12/04/2025 is acknowledged. Information Disclosure Statement The information disclosure statements filed on 04/21/2023 and 02/03/2023 have been considered. Drawings The drawings filed on 02/03/2023 are acceptable. Specification The abstract of the disclosure and the specification filed on 02/03/2023 are acceptable. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1-3, 5-7 is/are rejected under 35 U.S.C. 102a2 as being anticipated by Radulescu (US 2023/0075505). PNG media_image1.png 614 642 media_image1.png Greyscale PNG media_image2.png 618 1040 media_image2.png Greyscale Regarding claim 1, Radulescu discloses: A transistor device, comprising: a substrate (322, ¶0068); a plurality of transistor unit cells arranged in parallel on the substrate, wherein each of the transistor unit cells comprises a source contact (315, ¶0072), a drain contact (305, ¶0072), and a gate finger (310, ¶0072) between the source contact (315) and the drain contact (305), wherein the gate finger (310) extends in a first direction and has a first end and a second end; wherein the source contacts (315), the drain contacts (305) and the gate fingers (310) of the plurality of unit cells define an active region of the transistor device in a portion of the substrate where the source contacts, the drain contacts and the gate fingers overlap in the first direction (x-direction, figure 1); and a first solder bump (solder bump 367, ¶0082) on the transistor device, wherein the first solder bump is within a periphery of the active region and is electrically connected to the gate finger (310) of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger (solder bump 367, see figure 2A, is electrically connected to gate finger 310 at least through conductive pillar 366 and metal contact 365, ¶0082 at multiple points between the first and second end of the gate finger 310, figure 1). Regarding claim 2, Radulescu further discloses: a source contact pad (321s, ¶0092) on the substrate adjacent a first side of the active region; a drain contact pad (321d) on the substrate adjacent a second side of the active region opposite the first side of the active region; a second solder bump (366) on the source contact pad; and a third solder bump (366) on the drain contact pad. Regarding claim 3, Radulescu further discloses: wherein the first solder bump (366) is connected to the gate finger (310) via a first metal interconnect layer (365, ¶0079) between the gate finger (310) and the first solder bump (366). Regarding claim 5, Radulescu further discloses: a first plurality of solder bumps (366) on the transistor device, wherein the first plurality of solder bumps are within the periphery of the active region and are electrically connected to gate fingers (310) of respective ones of the plurality of transistor unit cells (figure 7a). Regarding claim 6, Radulescu further discloses: wherein the first solder bump (366) is directly above the gate finger (310). Regarding claim 7, Radulescu further discloses: wherein the transistor device is configured to be flip-chip mounted to a submount having a contact bond pad region that contacts the first solder bump (¶0122) . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 8 is/are rejected under 35 U.S.C. 103 as being unpatentable over Radulescu. Regarding claim 8, Radulescu does not disclose “wherein an input signal is propagated along the contact bond pad region to the first solder bump (365) in a second direction that is perpendicular to the first direction”. However, Applicant is advised that the claimed limitation is an intended use limitation rather than a required structural limitation further limiting the scope of the device claim. The applied prior art can be so modified or used and therefore renders unpatentable such claim limitations. See, for example, M.P.E.P. § 2111.04, and precedents cited therein. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to WILLIAM A HARRISTON whose telephone number is (571)270-3897. The examiner can normally be reached Mon-Fri, 9AM-5PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Dale Page can be reached at 571 270 7877. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /WILLIAM A HARRISTON/Primary Examiner, Art Unit 2899
Read full office action

Prosecution Timeline

Feb 03, 2023
Application Filed
Apr 21, 2023
Response after Non-Final Action
Dec 22, 2025
Non-Final Rejection — §102, §103
Apr 03, 2026
Response Filed

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604721
REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES
2y 5m to grant Granted Apr 14, 2026
Patent 12604757
SEMICONDUCTOR PACKAGE
2y 5m to grant Granted Apr 14, 2026
Patent 12598776
NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION
2y 5m to grant Granted Apr 07, 2026
Patent 12593695
STRUCTURE AND PROCESS FOR WARPAGE REDUCTION
2y 5m to grant Granted Mar 31, 2026
Patent 12588518
SEMICONDUCTOR DEVICE WITH REINFORCED DIELECTRIC AND METHOD THEREFOR
2y 5m to grant Granted Mar 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
99%
With Interview (+20.0%)
2y 2m
Median Time to Grant
Low
PTA Risk
Based on 1054 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in for Full Analysis

Enter your email to receive a magic link. No password needed.

Free tier: 3 strategy analyses per month