CTNF 18/106,981 CTNF 74140 DETAILED ACTION Notice of Pre-AIA or AIA Status 07-03-aia AIA 15-10-aia The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. Election/Restrictions 08-25 AIA Applicant's election with traverse of Species A1 and Species B3 in the reply filed on 03/12/2026 is acknowledged. The traversal is on the ground(s) that there is no additional burden to the Examiner since the pending claims are related to the same subject matter and as a result, separate searches would likely identify the same references . This is not found persuasive because, the species or groupings of patentably indistinct species require a different field of search (e.g., searching different classes/subclasses or electronic resources, or employing different search strategies or search queries) . The requirement is still deemed proper and is therefore made FINAL. Applicant identified claims 2, 5, 11-12 and 14 as readable on the non-elected species. However, it should be noted that claim 15 depends on withdrawn claim 14 and therefore, it has also been withdrawn from consideration. Additionally, it should be noted that claim 4 is directed to a non-elected embodiment (Species B1 and/or B2) and therefore, it has also been withdrawn from consideration. Claims 2, 4-5, 11-12, 14-15 are withdrawn from further consideration pursuant to 37 CFR 1.142(b), as being drawn to a nonelected species, there being no allowable generic or linking claim. Applicant timely traversed the restriction (election) requirement in the reply filed on 03/12/2026. Claim Rejections - 35 USC § 102 07-06 AIA 15-10-15 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. 07-07-aia AIA 07-07 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – 07-08-aia AIA (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. 07-12-aia AIA (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. 07-15-03-aia AIA Claim(s) 1, 3, 6-10, 13, 16-20 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Ito, US 2023/0131199 . With respect to independent claim 1, Ito shows the invention as claimed including a process chamber comprising: a chamber body 10 disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support 12 in the process volume; a plasma source 14 disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector 16 positioned at least partially in the process volume, and as broadly claimed, the first deflector comprising an annular body having a top 16c, a bottom 161/162, one or more outer side surfaces connecting the top with the bottom (outer surfaces of the deflector), and one or more inner side surfaces connecting the top with the bottom (inner surfaces of the deflector), wherein the one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume (see, for example, Fig. 1-3C and their descriptions, Fig. 1 is shown below). PNG media_image1.png 486 441 media_image1.png Greyscale With respect to the process chamber suitable for use in semiconductor manufacturing, it should be noted that such limitation is directed to a method limitation instead of an apparatus limitation, and since an apparatus is being claimed as the instant invention, the method teachings are not considered to be the matter at hand, since a variety of methods can be done with the apparatus. The method limitations are viewed as intended uses which do not further limit, and therefore do not patentably distinguish the claimed invention. The apparatus of Ito is capable of being used for processing a semiconductor if the method to be performed within the apparatus requires it. Regarding claims 3 and 6, it should be noted that the outer edge of the bottom 161 of the annular body is located outwardly relative to an outer edge of the top 16c of the annular body; and the annular body is located partially in the plasma-generating volume (see, for example, modified Fig. 1 below). PNG media_image2.png 476 445 media_image2.png Greyscale Concerning claim 7, it should be noted that in the apparatus of Ito the plasma-generating volume has a height that varies with a distance from a central vertical axis extending through a center of the plasma-generating volume, an outer portion of the plasma-generating volume has a first height, a central portion of the plasma-generating volume has a second height, the first height is greater than the second height, and the annular body underlies the outer portion (see, for example, modified Fig. 1 below). PNG media_image3.png 534 507 media_image3.png Greyscale With respect to claim 8 and 16, it should be noted that the highest concentration of plasma would be located in the area around and close to the top electrode 14, and therefore, the annular body would underlie a portion of the plasma-generating volume configured to generate the highest concentration of plasma. Concerning claims 9-10 and 17-18 the annular body includes a plurality of holes 16g/161h/162h extending through the annular body; and the annular body surrounds an area in a horizontal plane that is at least 50% of a total area of a substrate supporting surface of the substrate support; (see, for example, fig. 1 above). Regarding claim 13, it should be noted that Ito further discloses that the plasma- generating volume is bounded by one or more interior side walls; the first deflector is positioned at least partially in the plasma-generating volume; and wherein the one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the plasma- generating volume. Concerning claim 19, it should be noted that Ito further discloses that the deflector is positioned between the substrate support and the top of the plasma source, and comprises a plurality of holes 16g/161h/162h extending through the annular body. With respect to claim 20, it should be noted that the plurality of holes 162h underlie a portion of the plasma-generating volume configured to generate a highest concentration of plasma . 07-15-aia AIA Claim(s) 1, 3, 6-10, 13, 16-20 is/are rejected under 35 U.S.C. 102 (a)(1) as being anticipated by XU et al., 2014/0120731 . With respect to claim 1, XU et al. shows the invention as claimed including a process chamber, suitable for use in semiconductor manufacturing, comprising: a chamber body 200/300/400/500/600/700 disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support 215/315/415/515/615/715 in the process volume; a plasma source 240/340/440/540/640/740 disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector 270/372-373/474-476/578/680/772-773 positioned at least partially in the process volume, the first deflector comprising an annular body having a top (top surface), a bottom (bottom surface), one or more outer side surfaces (outer side surfaces of the deflectors) connecting the top with the bottom, and one or more inner side surfaces (the inner side surfaces of the deflectors) connecting the top with the bottom, wherein the one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume; see, for example, Figs. 2-7, and their descriptions, Fig. 4 is shown below). PNG media_image4.png 347 393 media_image4.png Greyscale Regarding claims 3 and 6, it should be noted that an outer edge of the bottom of the annular body is located outwardly relative to an outer edge of the top of the annular body (see, for example, Fig. 4 above); the annular body is located partially in the plasma-generating volume (see, for example, Figs. 2-6, and especially Fig. 7, and their descriptions, Fig. 7 is shown below). PNG media_image5.png 349 422 media_image5.png Greyscale Regarding claim 7, it should be noted that the plasma-generating volume has a height that varies with a distance from a central vertical axis extending through a center of the plasma-generating volume, an outer portion of the plasma-generating volume has a first height, a central portion of the plasma-generating volume has a second height, the first height is greater than the second height, and the annular body underlies the outer portion (see, for example, modified Fig. 7 below). Furthermore, note that one of the embodiments shown in Fig. 7 (Figure 7A) have the deflector 773 having different heights. PNG media_image6.png 413 445 media_image6.png Greyscale Concerning claims 8-10 and 16-18, it should be noted that the annular body underlies a portion of the plasma-generating volume configured to generate a highest concentration of plasma (see, for example, Figs. 2-7); the annular body includes a plurality of holes 579/776 extending through the annular body (see, for example, Figs. 5 and 7); and wherein the annular body surrounds an area in a horizontal plane that is at least 50% of a total area of a substrate supporting surface of the substrate support (see, for example, Figs. 2-7, especially Figs. 3-4). Regarding claim 13, it should be noted that XU et al. further discloses that the plasma- generating volume is bounded by one or more interior side walls; the first deflector is positioned at least partially in the plasma-generating volume; and wherein the one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the plasma- generating volume (see, for example, Figs. 2-7). Concerning claim 19, it should be noted that XU et al. further discloses that the deflector is positioned between the substrate support and the top of the plasma source, and comprises a plurality of holes 579/776 extending through the annular body (see, for example, Figs. 5 and 7). With respect to claim 20, it should be noted that the plurality of holes 579/776 underlie a portion of the plasma-generating volume configured to generate a highest concentration of plasma . Conclusion 07-96 AIA The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Su (US 5,552,124) is cited for its teachings of a processing chamber comprising a deflector . Any inquiry concerning this communication or earlier communications from the examiner should be directed to LUZ L ALEJANDRO whose telephone number is (571)272-1430. The examiner can normally be reached Monday and Thursday, 8:30 a.m. - 5:00 p.m.. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Parviz Hassanzadeh can be reached at 571-272-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. 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If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /LUZ L ALEJANDRO MULERO/Primary Examiner, Art Unit 1716 June 11, 2026 Application/Control Number: 18/106,981 Page 2 Art Unit: 1716 Application/Control Number: 18/106,981 Page 3 Art Unit: 1716 Application/Control Number: 18/106,981 Page 4 Art Unit: 1716 Application/Control Number: 18/106,981 Page 5 Art Unit: 1716 Application/Control Number: 18/106,981 Page 6 Art Unit: 1716 Application/Control Number: 18/106,981 Page 7 Art Unit: 1716 Application/Control Number: 18/106,981 Page 8 Art Unit: 1716 Application/Control Number: 18/106,981 Page 9 Art Unit: 1716 Application/Control Number: 18/106,981 Page 10 Art Unit: 1716 Application/Control Number: 18/106,981 Page 11 Art Unit: 1716
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