Prosecution Insights
Last updated: August 17, 2026
Application No. 18/150,912

SEMICONDUCTOR DEVICE WITH INDUCTIVE COMPONENT AND METHOD OF FORMING

Non-Final OA §102
Filed
Jan 06, 2023
Examiner
PATERSON, BRIGITTE A
Art Unit
2896
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
2 (Non-Final)
76%
Grant Probability
Favorable
2-3
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allowance Rate
292 granted / 382 resolved
+8.4% vs TC avg
Strong +24% interview lift
Without
With
+23.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 8m
Avg Prosecution
24 currently pending
Career history
407
Total Applications
across all art units

Statute-Specific Performance

§101
1.4%
-38.6% vs TC avg
§103
47.0%
+7.0% vs TC avg
§102
26.5%
-13.5% vs TC avg
§112
23.7%
-16.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 382 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1, 4 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by US 20190006455 A1 (Ku) as evidenced by US 20040121606 A1 (Raskin). Re claim 1, Ku teaches a method of forming a semiconductor device, the method comprising: forming a first insulation layer (insulating layer 115 [0043]) over a substrate (substrate 100); depositing a first stack of magnetic layers (magnetic stack 124) over the first insulation layer; etching the first stack of magnetic layers such that a sidewall of the first stack of magnetic layers forms a stairstep pattern (Figs. 4C-4F); forming a first photosensitive layer (polymer layer 130 Ku does teach that the polymer can be epoxy, polyimide, benzocyclobutene (BCB), polybenzoxazole (PBO) ([0043]). US 20040121606 A1 Raskin teaches that benzocytobutene is a photosensitive dielectric material ([0037])) over the first stack of magnetic layers, the first insulation layer, and the substrate, wherein a thickness of the first photosensitive layer above a center of a first step of the stairstep pattern is different from a thickness of the first photosensitive layer above a center of a second step of the stairstep pattern (Fig. 2); forming a first conductive feature (second metal layer 132) over the first photosensitive layer; depositing a second insulation layer (polymer layer 134) over the first photosensitive layer and the first conductive feature; depositing a second magnetic layer (UBM 138 which can be nickel which is a magnetic material [0048]) over the second insulation layer (Figs. 4A-4F). PNG media_image1.png 494 755 media_image1.png Greyscale PNG media_image2.png 503 726 media_image2.png Greyscale Re claim 4, Ku teaches wherein the first photosensitive layer comprises a polymer (polymer layer 130 can be benzocyclobutene (BCP) [0043]). Allowable Subject Matter Claims 2-3 and 5-7 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Claims 8-14, 21, 23-27 are allowed. Response to Arguments Applicant’s arguments with respect to claim(s) 1 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to BRIGITTE A PATERSON whose telephone number is (571)272-1752. The examiner can normally be reached Monday-Friday 9:00AM-5:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Kraig can be reached at 571-272-8660. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. BRIGITTE A. PATERSON Primary Examiner Art Unit 2896 /BRIGITTE A PATERSON/Primary Examiner, Art Unit 2896
Read full office action

Prosecution Timeline

Jan 06, 2023
Application Filed
Mar 19, 2026
Non-Final Rejection mailed — §102
Jun 16, 2026
Response Filed
Jun 30, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12696495
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
3y 6m to grant Granted Jul 28, 2026
Patent 12652869
GERMANIUM-SILICON LIGHT SENSING APPARATUS II
2y 10m to grant Granted Jun 09, 2026
Patent 12628350
MANGANESE OR SCANDIUM DOPED FERROELECTRIC DEVICE AND BIT-CELL
3y 6m to grant Granted May 12, 2026
Patent 12622010
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
3y 8m to grant Granted May 05, 2026
Patent 12616998
MANUFACTURING METHOD OF WAFER LEVEL ULTRASONIC DEVICE
2y 7m to grant Granted May 05, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

2-3
Expected OA Rounds
76%
Grant Probability
99%
With Interview (+23.6%)
2y 8m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 382 resolved cases by this examiner. Grant probability derived from career allowance rate.

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