Prosecution Insights
Last updated: April 19, 2026
Application No. 18/151,643

INTEGRATED CIRCUIT PACKAGES AND METHODS

Non-Final OA §102§112
Filed
Jan 09, 2023
Examiner
TOBERGTE, NICHOLAS J
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Co., Ltd.
OA Round
1 (Non-Final)
94%
Grant Probability
Favorable
1-2
OA Rounds
1y 11m
To Grant
96%
With Interview

Examiner Intelligence

Grants 94% — above average
94%
Career Allow Rate
837 granted / 886 resolved
+26.5% vs TC avg
Minimal +2% lift
Without
With
+2.0%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 11m
Avg Prosecution
28 currently pending
Career history
914
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
38.3%
-1.7% vs TC avg
§102
30.1%
-9.9% vs TC avg
§112
11.9%
-28.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 886 resolved cases

Office Action

§102 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of Group I in the reply filed on 11/11/25 is acknowledged. Claim Rejections - 35 USC § 112 The following is a quotation of the first paragraph of 35 U.S.C. 112(a): (a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention. Claims 21-28 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention. With respect to claim 21, it is claimed a structure wherein a first substrate has a first interconnect OVER it, and then a first bonding layer OVER the first interconnect structure, wherein a portion of the first substrate OVERHANGS the first bonding layer. See Applicant’s Figure 16 marked up below, using the definition of the layers found in the specification as taught. Note that the layers are inverse of what is claimed. What is claimed is not taught in the specification nor the figures, namely, the layers claimed are not disclosed to be OVER each other, in fact, the disclosure teaches the opposite of this order. It is believed that the claim should read in this specific order for the written description requirement to be met: a first bonding layer; a first interconnect structure over the first bonding layer; a first substrate over the first interconnect layer, wherein a first portion of the first substrate overhangs the first bonding layer. PNG media_image1.png 614 980 media_image1.png Greyscale Claims 22-28 depend upon rejected claim 21 and do not overcome this deficiency and thus stand rejected. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1, 6 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lin et al US 2022/0367407. Pertaining to claim 1, Lin teaches an integrated circuit package comprising: a first integrated circuit die 52 comprising: a first substrate 64; a first interconnect structure 54 on a front side of the first substrate; and a first bonding layer (top portion of 52 see [0016] where the reference describes element 52 to include devices ie integrated circuits and they are surrounded by an ILD layer, which can be considered the “bonding layer” as that is what goes on to interface with layer 164) on the first interconnect structure 54, the first interconnect structure 54 being between the first bonding layer (top portion of 52 see [0016] as stated above) and the first substrate 64; an insulating layer along sidewalls of the first integrated circuit die see [0016] which describes ILD layer surrounding devices; and a second integrated circuit die 152 bonded to the first integrated circuit die 52, the second integrated circuit die comprising: a second substrate 154; a second interconnect structure (connection elements marked up in Figure 20 below within layer 158) on a front side of the second substrate; and a second bonding layer 164 on the second interconnect structure, the second interconnect structure being between the second bonding layer 164 and the second substrate 154, wherein a first surface of the first bonding layer 52S is in direct contact with a first surface of the second bonding layer 164, wherein a sidewall of the first bonding layer 52S and the first surface of the second bonding layer 164 form a first acute angle See Figure 20 marked up below. PNG media_image2.png 664 822 media_image2.png Greyscale Pertaining to claim 6, Lin teaches the integrated circuit package of claim 1, wherein a portion of the first substrate 64 adjacent the front side of the first substrate is recessed from a sidewall of the first interconnect structure 54 see Figure 20 a portion of which marked up below. PNG media_image3.png 468 359 media_image3.png Greyscale Pertaining to claim 21, Lin teaches an integrated circuit package comprising: a first integrated circuit die 52 comprising: a first substrate 64; a first interconnect structure 54 over the first substrate; and a first bonding layer (top portion of 52 see [0016] where the reference describes element 52 to include devices ie integrated circuits and they are surrounded by an ILD layer, which can be considered the “bonding layer” as that is what goes on to interface with layer 164) over the first interconnect structure 54, wherein a first portion of the first substrate overhangs the first bonding layer; an encapsulant encircling the first integrated circuit die see [0016] which describes ILD layer surrounding devices; and a second integrated circuit die 152 bonded to the first integrated circuit die 52, the second integrated circuit die comprising: a second substrate 154; a second interconnect structure (connection elements marked up in Figure 20 below within layer 158) over the second substrate; and a second bonding layer 164 over the second interconnect structure, the second interconnect structure being between the second bonding layer 164 and the second substrate 154, wherein a first surface of the first bonding layer 52S is bonded to a first surface of the second bonding layer 164 Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 7 and 8 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Tsai et al US 2023/0411326 . The applied reference has a common assignee with the instant application. Based upon the earlier effectively filed date of the reference, it constitutes prior art under 35 U.S.C. 102(a)(2). This rejection under 35 U.S.C. 102(a)(2) might be overcome by: (1) a showing under 37 CFR 1.130(a) that the subject matter disclosed in the reference was obtained directly or indirectly from the inventor or a joint inventor of this application and is thus not prior art in accordance with 35 U.S.C. 102(b)(2)(A); (2) a showing under 37 CFR 1.130(b) of a prior public disclosure under 35 U.S.C. 102(b)(2)(B) if the same invention is not being claimed; or (3) a statement pursuant to 35 U.S.C. 102(b)(2)(C) establishing that, not later than the effective filing date of the claimed invention, the subject matter disclosed in the reference and the claimed invention were either owned by the same person or subject to an obligation of assignment to the same person or subject to a joint research agreement. Pertaining to claim 7, Tsai teaches an integrated circuit package comprising: a first integrated circuit die 200 comprising: a first bonding layer 112; a first substrate 204b; and a first interconnect structure 212 between the first bonding layer 112 and the first substrate 204b, wherein the first interconnect structure comprises a first surface facing the first substrate See Figure 4; and an encapsulant 120/124 (can be a two part two material encapsulant) along sidewalls of the first integrated circuit die 200, wherein the encapsulant contacts the first surface of the first interconnect structure 210. See Figure 6 marked up below Pertaining to claim 8, Tsai teaches the integrated circuit package of claim 7, wherein the first bonding layer 112 extends laterally beyond a sidewall of the first substrate 204b and wherein a distal portion of the first substrate overhangs the first bonding layer See Figure 6 marked up below. PNG media_image4.png 572 806 media_image4.png Greyscale Allowable Subject Matter Claims 2-5, 9-12 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: Pertaining to claims 2 and 12, the prior art does not teach wherein the acute angle is less than 30 degrees, teaching instead an acute angle between 80 and 90 degrees Pertaining to claim 3, the prior art does not teach nor suggest either alone or in combination using recast material on sidewalls of the first substrate, interconnect structure and bonding layer (See Applicants Figure 12). Pertaining to claim 9, the prior art does not teach nor suggest alone nor in combination wherein the first bonding layer comprises a sidewall adjacent to the first interconnect structure, wherein the first bonding layer comprises a second surface facing the first substrate, and wherein the sidewall of the first bonding layer and a line perpendicular to the second surface of the first bonding layer form a first acute angle in combination with the encapsulant layer as claimed in claim 7. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to NICHOLAS J TOBERGTE whose telephone number is (571)272-6458. The examiner can normally be reached M-F 7:30-4:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kretelia Graham can be reached at (571) 272-5055. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /NICHOLAS J TOBERGTE/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Jan 09, 2023
Application Filed
Jan 08, 2026
Non-Final Rejection — §102, §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604738
SYSTEMS AND METHODS FOR PROVIDING DYNAMIC SECURITY FABRIC INTERPOSERS IN HETEROGENEOUSLY INTEGRATED SYSTEMS
2y 5m to grant Granted Apr 14, 2026
Patent 12599031
SEMICONDUCTOR PACKAGE AND METHOD
2y 5m to grant Granted Apr 07, 2026
Patent 12588531
SEMICONDUCTOR DEVICE
2y 5m to grant Granted Mar 24, 2026
Patent 12575435
SEMICONDUCTOR PACKAGES AND METHOD OF MANUFACTURING THE SAME
2y 5m to grant Granted Mar 10, 2026
Patent 12575322
ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME
2y 5m to grant Granted Mar 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
94%
Grant Probability
96%
With Interview (+2.0%)
1y 11m
Median Time to Grant
Low
PTA Risk
Based on 886 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month