Prosecution Insights
Last updated: April 19, 2026
Application No. 18/210,328

ELECTROSTATIC SUBSTRATE SUPPORT

Non-Final OA §DP
Filed
Jun 15, 2023
Examiner
PATEL, DHARTI HARIDAS
Art Unit
2838
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Applied Materials, Inc.
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
2y 5m
To Grant
95%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allow Rate
1079 granted / 1239 resolved
+19.1% vs TC avg
Moderate +8% lift
Without
With
+7.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
23 currently pending
Career history
1262
Total Applications
across all art units

Statute-Specific Performance

§101
0.8%
-39.2% vs TC avg
§103
42.3%
+2.3% vs TC avg
§102
43.5%
+3.5% vs TC avg
§112
2.2%
-37.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1239 resolved cases

Office Action

§DP
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. Claims 1, 16, and 23 are provisionally rejected on the ground of non-statutory double patenting as being unpatentable over claims 1, 13, and 16 of co-pending Application No. 18/206,443 (reference application). Although the claims at issue are not identical, they are not patentably distinct from each other. All of the claim limitations of the claims 1, 16, 23 are recited in claims of the co-pending application 18/206,443. The co-pending application discloses an electrostatic chuck comprising: a ceramic body comprising a first surface; two or more regions on the first surface, wherein the regions are arranged concentrically on the first surface; wherein each region comprising a retaining ring, a plurality of structures; plurality of gas conduits, one or more embedded electrodes. This is a provisional non-statutory double patenting rejection because the patentably indistinct claims have not in fact been patented. Allowable Subject Matter Claims 1-34 are allowed, pending the filing of the terminal disclaimer as indicated above. The following is an examiner’s statement of reasons for allowance of claims 1, 16, and 20: The prior art does not disclose an electrostatic chuck (ESC) comprising; a ceramic body [Fig. 3B, 114] comprising a first surface; one region comprises: a retaining ring [Fig. 3A, ring assembly 112] arranged on the first surface and defining an outer edge of the region; and a plurality of structures [Fig. 3B, supporting structures as shown] arranged on the first surface and within the region, the plurality of structures configured to support a surface of a substrate [Fig. 3B, wafer W] when the substrate is retained by the electrostatic chuck; one or more gas conduits [Fig. 2, gas supply 20, gas conduits 13a, 13b, 13c]; one or more embedded electrodes [Fig. 2, electrodes 116] within the ceramic body and arranged with respect to the first surface, wherein the one or more embedded electrodes are configured to generate a retaining force on the surface of the substrate when the substrate is retained by the ESC structure [col. 3 to col. 7]. However, the prior art does not disclose an electrostatic chuck (ESC) structure embodied in a machine-readable medium for designing, manufacturing, or testing a design, the ESC structure comprising: two or more regions defined on the first surface, wherein the two or more regions are arranged concentrically with respect to each other on the first surface, wherein each region comprises: a retaining ring arranged on the first surface and defining an outer edge of the region; and a plurality of structures arranged on the first surface and within the region, the plurality of structures configured to support a surface of a substrate when the substrate is retained by the electrostatic chuck; one or more gas conduits configured to introduce a gas into the two or more regions through the ceramic body and to the first surface, wherein the two or more regions are configured to retain a positive gas pressure within a respective region and the surface of a substrate when the substrate is retained by the electrostatic chuck. These features in combination with the rest of the claim limitations is not anticipated or rendered obvious by the prior art of record. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to DHARTI PATEL whose telephone number is (571)272-8659. The examiner can normally be reached M - F 9 AM - 5 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Thienvu Tran can be reached at 571-270-1276. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. DHARTI PATEL Primary Examiner Art Unit 2836 /DHARTI H PATEL/ Primary Examiner, Art Unit 2838
Read full office action

Prosecution Timeline

Jun 15, 2023
Application Filed
Jan 19, 2026
Non-Final Rejection — §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12603259
RESISTIVITY-CONTROLLED DIELECTRIC MATERIALS FOR SUBSTRATE SUPPORTS WITH IMPROVED HIGH TEMPERATURE CHUCKING
2y 5m to grant Granted Apr 14, 2026
Patent 12592557
PRE-CHARGE SHORT CIRCUIT DETECTION
2y 5m to grant Granted Mar 31, 2026
Patent 12587010
METHOD FOR ADJUSTING GATE BIAS CLAMP VOLTAGE, SEMICONDUCTOR DEVICE, AND BIAS CLAMP CIRCUIT USING THE SAME
2y 5m to grant Granted Mar 24, 2026
Patent 12587007
METHOD FOR CONTROLLING AN OVERCURRENT FUSE OF A BATTERY PACK IN AN ENERGY STORAGE SYSTEM OF A VEHICLE
2y 5m to grant Granted Mar 24, 2026
Patent 12573843
GaN-BASED SEMICONDUCTOR DEVICE AND ELECTROSTATIC DISCHARGE (ESD) CLAMP CIRCUIT
2y 5m to grant Granted Mar 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
95%
With Interview (+7.8%)
2y 5m
Median Time to Grant
Low
PTA Risk
Based on 1239 resolved cases by this examiner. Grant probability derived from career allow rate.

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