DETAILED ACTION
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 1-2, 4-5, 7-10, 12 and 20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lee et al. (Lee. US 2020/0152694 A1).
Regarding claims 1 and 20, Lee shows a display device comprising: a substrate (substrate 100 in FIG. 1F and [0033]); a plurality of pixel electrodes (PX in in FIG. 1B and [0033]) on the substrate (substrate 100); a plurality of light emitting elements (LED chip 300 in FIG. 1F) on the plurality of pixel electrodes (PX), each of the plurality of light emitting elements (LED chip 300) comprising a first semiconductor layer (first semiconductor layer 310), an active layer ( active layer 330), and a second semiconductor layer (second semiconductor layer 320), and a barrier layer ( barrier layer 500/520 [0032-0033]) around the plurality of light emitting elements (LED chips 300) and partitioning the plurality of light emitting elements (LED 300), wherein the barrier layer comprises a semiconductor material ([0037] e.g. GaN) and a dopant comprising iron or carbon ([0037] e.g. SiC).
Regarding claim 2, Lee shows a display device comprising, wherein the semiconductor material of the barrier layer (barrier layer 500/520) comprises AIGaInN, GaN, AIGaN, InGaN, AIN or InN ([0037]).
Regarding claim 4, Lee shows a display device comprising, wherein the second semiconductor layer ( second semiconductor layer 320 in Fig. 1F) is a common layer continuously on the plurality of light emitting elements ( LED 300).
Regarding claim 5, Lee shows a display device comprising, wherein the barrier layer ( barrier layer 500/520) is on a second semiconductor region ( second semiconductor layer 320) not overlapping the first semiconductor layer (first semiconductor layer 310) and the active layer (active layer 310).
Regarding claim 7, Lee shows a display device comprising, wherein one surface of the barrier layer (barrier layer 500/510) aligns and coincides with one surface of the first semiconductor layer (first semiconductor layer 310 see FIG. 1E).
Regarding claim 8, Lee shows a display device comprising, wherein the barrier layer (barrier layer 500/510) is in contact with a portion of the second semiconductor layer (second semiconductor layer 320), the first semiconductor layer (first semiconductor layer 310), and a side surface of the active layer (active layer 330) of each of the plurality of light emitting elements (LED 300).
Regarding claim 9, Lee shows a display device comprising, wherein the plurality of light emitting elements (LED 300) comprises a first light emitting element configured to emit light of a blue wavelength band, a second light emitting element configured to emit light of a green wavelength band, and a third light emitting element configured to emit light of a red wavelength band ([0041]).
Regarding claim 10, Lee shows a display device comprising, wherein the active layer (active layer 330) of the first light emitting element (LED 300), the active layer (active layer 330) of the second light emitting element (LED 300), and the active layer of the third light emitting element comprise different amount of indium doped into a semiconductor material ([0041]).
Regarding claim 12, Lee shows a method of a display device, the method comprising: forming a third semiconductor layer (semiconductor layer 320) and a second semiconductor layer (semiconductor layer 310) on a target substrate (substrate 100); forming a first insulating member ([0057]) on the second semiconductor layer (semiconductor layer 310) and forming a barrier layer (barrier layer 500) from the second semiconductor layer (semiconductor layer 310); forming a plurality of openings by removing the first insulating layer using a hard mask ( [0073 +]); forming light emitting elements (LED 300) in the plurality of openings; and bonding the light emitting elements to a semiconductor circuit board (module substrate 1000), wherein the barrier layer is grown from the second semiconductor layer (semiconductor layer 310) and is formed by doping iron or carbon as a dopant ([0037] e.g. SiC).
Regarding claim 15, Lee shows a method of a display device, wherein the barrier layer (barrier layer 500/510) has a same length as the first insulating layer ( part of 200).
Allowable Subject Matter
Claims 3, 6, 11, 13-19 objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to ELIAS M ULLAH whose telephone number is (571)272-1415. The examiner can normally be reached M-F at 8AM-5PM EST.
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/ELIAS ULLAH/Primary Examiner, Art Unit 2893