Prosecution Insights
Last updated: May 29, 2026
Application No. 18/258,453

METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILMS USING SAME, AND METHOD FOR REDUCING VOLUME SHRINKAGE RATIO OF METAL OXIDE FILMS

Non-Final OA §102§DOUBLEPATENT
Filed
Jun 20, 2023
Priority
Dec 24, 2020 — JP 2020-214869 +1 more
Examiner
CHACKO DAVIS, DABORAH
Art Unit
1737
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Tokyo Ohka Kogyo Co., Ltd.
OA Round
1 (Non-Final)
72%
Grant Probability
Favorable
1-2
OA Rounds
5m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 72% — above average
72%
Career Allowance Rate
698 granted / 973 resolved
+6.7% vs TC avg
Strong +21% interview lift
Without
With
+20.6%
Interview Lift
resolved cases with interview
Typical timeline
3y 4m
Avg Prosecution
26 currently pending
Career history
1014
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
48.0%
+8.0% vs TC avg
§102
22.4%
-17.6% vs TC avg
§112
17.4%
-22.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 973 resolved cases

Office Action

§102 §DOUBLEPATENT
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-8, is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by U. S. Patent Application Publication No. 2020/0139433 (hereinafter referred to as Matsumoto). Matsumoto, in [0108], discloses that the metal oxide containing composition is coated onto a substrate to form a film and subjected to heating to form the metal-oxide containing film. Matsumoto, in [0081]-[0084], [0155]-[0158], discloses a metal oxide containing composition that can be used to form a cured film (coated and heated to form a film), and the composition includes (A) metal oxide fine particle dispersion liquid that includes metal oxide particles dispersed with carboxylic acid compound (claimed capping agent) (see [0014]-[0017], [0054]-[0055]), (B) base material component (see [0084]-[0085]), and solvent, wherein the content of the metal oxide fine particle is 50% by mass or more, and more preferably 70% by mass or more in the composition, and Matsumoto, in [0056], discloses that organic component (capping agent) is less than 20 parts by mass, and thereby, will inherently possess the claimed ratio (25 mass% or more, 50 mass% or more). Matsumoto, in [0022], discloses that the metal oxide fine particles have an average diameter of 1nm and are inherently and necessarily the same claimed nanoparticle clusters. Matsumoto, as disclosed in the preceding sentences, teaches the same claimed composition of a metal oxide fine particle (having nanosized diameter, and in the claimed content), capping agent (carboxylic acid compound), same claimed base material and solvent, and is coated and heated in the same claimed manner and will inherently possess the claimed reduced volume shrinkage ratio (claims 1-2, 5, and 8). Matsumoto, in [0155], and [0498], discloses that the composition can include a surfactant (claim 3). Matsumoto, in [0021], discloses that the metal oxide fine particles can include oxides of Cu, In, Sn, Ti, Hf, Al, Ce, Zn, La, yttrium, Zr, Mg (claim 4). Matsumoto, in [0108], discloses that the metal oxide containing composition is coated onto a substrate to form a film and subjected to heating to form the metal-oxide containing film (claim 5). Matsumoto, in [0687]-[0688], discloses that the metal oxide fine particle-containing composition is coated onto a substrate and baked to a temperature of more than 350°C and less than 1000°C (includes the claimed 400°C or more) (claim 6). Matsumoto, in [0560], discloses that the metal oxide containing cured film can be used as a hard coat or hard mask (claim 7). Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. Claims 1-8, are provisionally rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-12 of copending Application No. 18/877,518 (U. S. Patent Application Publication No. 2025/0388766). Although the claims at issue are not identical, they are not patentably distinct from each other because claims 1-12, of copending Application No. 18/877,518 (U. S. Patent Application Publication No. 2025/0388766) discloses a metal oxide dispersion that comprises a metal oxide nanoparticle, capping agent, organic content (includes base material), surfactant, and solvent, and the dispersion is coated and heated to form a coating film and thereby fully encompasses claims 1-8 of the instant application. This is a provisional nonstatutory double patenting rejection because the patentably indistinct claims have not in fact been patented. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Daborah Chacko-Davis whose telephone number is (571) 272-1380. The examiner can normally be reached on 9:30AM-6:00PM EST Mon-Fri. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Mark F. Huff can be reached on (571) 272-1385. The fax phone number for the organization where this application or proceeding is assigned is 571-272-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DABORAH CHACKO-DAVIS/Primary Examiner, Art Unit 1737 December 30, 2025.
Read full office action

Prosecution Timeline

Jun 20, 2023
Application Filed
Jan 09, 2026
Non-Final Rejection mailed — §102, §DOUBLEPATENT (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12631961
MONOALKYL TIN TRIALKOXIDES AND/OR MONOALKYL TIN TRIAMIDES WITH LOW METAL CONTAMINATION AND/OR PARTICULATE CONTAMINATION, AND CORRESPONDING METHODS
3y 1m to grant Granted May 19, 2026
Patent 12613462
RESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
4y 2m to grant Granted Apr 28, 2026
Patent 12613468
METHOD FOR FORMING PATTERNED PHOTORESIST
2y 5m to grant Granted Apr 28, 2026
Patent 12610788
METHOD OF PROCESSING PHOTORESIST LAYER, AND PHOTORESIST LAYER
3y 9m to grant Granted Apr 21, 2026
Patent 12607925
PELLICLE, EXPOSURE ORIGINAL PLATE, EXPOSURE DEVICE, METHOD OF MANUFACTURING PELLICLE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
3y 3m to grant Granted Apr 21, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
72%
Grant Probability
92%
With Interview (+20.6%)
3y 4m (~5m remaining)
Median Time to Grant
Low
PTA Risk
Based on 973 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month