DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 103
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claims 1, 4-5, 7-8, 14-15, and 18-20 are rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021
Claim 1: Hatsumi discloses an electronic apparatus comprising: a substrate ( Fig. 26 #151); a plurality of organic light-emitting devices ( Fig. 26: OLED Red, OLED Green, OLED Blue ) and an organic photodiode ( Fig. 26: OPD ) that are arranged on the substrate, wherein: the plurality of organic light-emitting devices comprise a first light-emitting device ( Fig. 26: OLED Red ), a second light-emitting device ( Fig. 26 OLED Green ), and a third light-emitting device ( Fig. 26: OLED Blue ), the organic photodiode ( Fig. 26 OPD ) sequentially comprises a first electrode ( Fig. 26 pixel electrode #181), a first auxiliary layer ( Fig. 26 hole-transport layer #186 ), a photoactive layer ( Fig. 26 active layer #183), and a common electrode ( Fig. 26 common electrode #115 ), the first light-emitting device ( Fig. 26: OLED Red ) sequentially comprises a second electrode ( Fig. 26 pixel electrode #191), a second auxiliary layer ( Fig. 26 #196R ), a first emission layer ( Fig. 26 #193R ), and a common electrode ( Fig. 26 #115 ), the second light-emitting device ( Fig. 26: OLED Green ) sequentially comprises a third electrode ( Fig. 26 #191 ), a third auxiliary layer ( Fig. 26 #196G), a second emission layer ( Fig. 26 #193G), and a common electrode ( Fig. 26 #115 ), the third light-emitting device ( Fig. 26: OLED Blue ) sequentially comprises a fourth electrode ( Fig. 26 #191), a fourth auxiliary layer ( Fig. 26 #196B), a third emission layer ( Fig. 26 #193B ), and a common electrode ( Fig. 26 #115).
Hatsumi does not appear to disclose the photoactive layer has a smaller thickness than a thickness of each of the first emission layer, the second emission layer, and the third emission layer and the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer have different thicknesses from each other, and a thickness of the first auxiliary layer is identical to a thickness of one selected from the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer.
However, Langguth teaches the photoactive layer ( [0422] The PAL may be formed on the HTL by vacuum deposition, spin coating, slot-die coating, printing, casting, LB deposition, or the like. When the PAL is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the PAL ) has a smaller thickness ( [0389] The common hole injection layer may have a thickness ≥1 nm and ≤100 nm, preferably ≥2 nm and ≤50 nm, more preferably ≥3 nm and ≤40 nm, more preferably ≥4 nm and ≤30 nm, more preferably ≥5 nm and ≤20 nm, more preferably ≥6 nm and ≤15 nm, more preferably ≥8 nm and ≤10 nm ) than a thickness of each of the first emission layer, the second emission layer, and the third emission layer ( [0512] EML thickness of 20 nm ).
Langguth does not appear to disclose the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer have different thicknesses from each other, and a thickness of the first auxiliary layer is identical to a thickness of one selected from the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer
However, Yoshizumi teaches the second auxiliary layer ( [0296] The thickness of the hole-transport layer #182R is preferably adjusted such that the optical distance between the pair of electrodes in the light-emitting and light-receiving element #347SR intensifies red light ), the third auxiliary layer ( [0296] the thickness of the hole-transport layer #182G is preferably adjusted such that the optical distance between the pair of electrodes in the light-emitting element #347G intensifies green light), and the fourth auxiliary layer have different thicknesses from each other ( [0296] the thickness of the hole-transport layer #182B is preferably adjusted such that the optical distance between the pair of electrodes in the light-emitting element #347B intensifies blue light ), and a thickness of the first auxiliary layer ( Fig. 21 #186 ) is identical to a thickness of one selected from the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer ( [0089] The light-receiving element #110 can have such a structure that the layers other than the active layer #113 are shared with the light-emitting element #190 )
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Yoshizumi with Hatsumi and Langguth to implement the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer have different thicknesses from each other, and a thickness of the first auxiliary layer is identical to a thickness of one selected from the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer because the layer thicknesses could be varied to improve mechanical strength, control impedance, or respond to different wavelengths of light.
Claim 4: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 (as discussed above).
Neither Hatsumi nor Langguth appear to disclose the thicknesses of the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer, are each proportional to the wavelength of light emitted from each of the first light-emitting device, the second light-emitting device, and the third light-emitting device.
However, Yoshizumi teaches the thicknesses of the second auxiliary layer ( [0296] The thickness of the hole-transport layer #182R is preferably adjusted such that the optical distance between the pair of electrodes in the light-emitting and light-receiving element #347SR intensifies red light ), the third auxiliary layer ( [0296] the thickness of the hole-transport layer #182G is preferably adjusted such that the optical distance between the pair of electrodes in the light-emitting element #347G intensifies green light ), and the fourth auxiliary layer ( [0296] the thickness of the hole-transport layer #182B is preferably adjusted such that the optical distance between the pair of electrodes in the light-emitting element #347B intensifies blue light ), are each proportional to the wavelength of light emitted from each of the first light-emitting device, the second light-emitting device, and the third light-emitting device ( as discussed above ).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Yoshizumi with Hatsumi and Langguth to implement the thicknesses of the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer, are each proportional to the wavelength of light emitted from each of the first light-emitting device, the second light-emitting device, and the third light-emitting device because this approach can be used to implement thin-film interference.
Claim 5: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Hatsumi teaches the first light-emitting device emits red light ( Fig. 26: OLED Red ), the second light-emitting device emits green light ( Fig. 26: OLED Green ), and the third light-emitting device emits blue light ( Fig. 26: OLED Blue ).
Claim 7: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 5 ( as discussed above).
Neither Hatsumi nor Langguth appear to disclose the first auxiliary layer has an identical thickness to a thickness of the second auxiliary layer.
However, Yoshizumi teaches the first auxiliary layer has an identical thickness to a thickness of the second auxiliary layer ( [0089] The light-receiving element #110 can have such a structure that the layers other than the active layer #113 are shared with the light-emitting element #190 )
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Yoshizumi with Hatsumi and Langguth to implement the first auxiliary layer has an identical thickness to a thickness of the second auxiliary layer because while a previous layer might be proportional to the wavelength of emitted light, subsequent layers can be tuned for other effects.
Claim 8: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 5 ( as discussed above).
Hatsumi teaches the organic photodiode detects light emitted from the second light-emitting device and reflected from a subject ( [0075] when an object reflects light emitted from the light-emitting element included in the display portion, the light-receiving element can sense the reflected light).
Claim 14: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Hatsumi teaches a first common layer ( Fig. 26 #112) is included between the first electrode ( Fig. 26 #181 ) and the first auxiliary layer ( Fig. 26 #186 ), between the second electrode ( Fig. 26 #191) and the second auxiliary layer ( Fig. 26 #196R ), between the third electrode ( Fig. 26 #191 ) and the third auxiliary layer ( Fig. 26 #196G ), and between the fourth electrode ( Fig. 26 #191 ) and the fourth auxiliary layer ( Fig. 26 #196B ).
Claim 15: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Hatsumi teaches a second common layer ( Fig. 26 #114a and #114b) is included between the photoactive layer ( Fig. 26 #183) and the common electrode ( Fig. 26 #115), between the first emission layer ( Fig. 26 #193R) and the common electrode ( Fig. 26 #115), between the second emission layer ( Fig. 26 #193G) and the common electrode ( Fig. 26 #115), and between the third emission layer ( Fig. 26 #193B) and the common electrode ( Fig. 26 #115).
Claim 18: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Hatsumi teaches the first auxiliary layer ( Fig. 26 #186 ) is in direct contact with the photoactive layer ( Fig. 26 #183 ), the second auxiliary layer ( Fig. 26 #196R ) is in direct contact with the first emission layer ( Fig. 26 #193R ), the third auxiliary layer ( Fig. 26 #196G ) is in direct contact with the second emission layer ( Fig. 26 #193G ), and the fourth auxiliary layer ( Fig. 26 #196B ) is in direct contact with the third emission layer ( Fig. 26 #193B ).
Claim 19: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Hatsumi teaches a material for forming the first auxiliary layer, the second auxiliary layer, the third auxiliary layer, and the fourth auxiliary layer comprises a fluorene-based compound, a carbazole-based compound, an arylamine-based compound, a dibenzofuran-based compound, a dibenzothiophene-based compound, and/or a dibenzosilole-based compound ( [0077] As a light-emitting substance contained in the EL element, a substance emitting flourescense (a fluorescent material), a substance emitting phosphorescence ( a phosphorescent material), an inorganic compound ( such as a quantum dot material), a substance exhibiting thermally activated delayed fluorescence (a thermally activated delayed fluorescence (TADF) material), or the like can be given ).
Claim 20: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Hatsumi teaches the plurality of the organic light-emitting devices and the organic photodiode form a pixel ( [0446] Fig. 26 illustrates a device structure forming a pixel of a display device), and the electronic apparatus comprises a plurality of the pixels ( Fig. 27A).
Claim 2 is rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021 as it relates to claim 1 and further in view of Loi et al.; US 2023/0139873 A1; 02/2021
Claim 2: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi appear to disclose the photoactive layer has a thickness in a range of about 200 Å to about 300 Å.
However, Loi teaches the photoactive layer ( Fig. 1A #110p) has a thickness in a range of about 200 Å to about 300 Å ( [0119] a typical layer thickness Dp and/or Dn of the n- and p-type photoactive layers #110p, #110n, is preferably between ten and a hundred nanometers).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Loi with Hatsumi, Langguth, and Yoshizumi to implement the photoactive layer has a thickness in a range of about 200 Å to about 300 Å because this is a result of a critical tradeoff between efficient light absorption and minimizing charge carrier recombination.
Claim 3 is rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021 as it relates to claim 1 and further in view of Nakamura et al.; US 11,856,808 B2; 06/2019
Claim 3: Hatsumi, Langguth and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi appear to disclose the first emission layer to third emission layer each have a thickness in a range of about 150 Å to about 500 Å.
However, Nakamura teaches the first emission layer to third emission layer each have a thickness in a range of about 150 Å to about 500 Å ( Table 3 Col 61 and 62).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Nakamura with Hatsumi, Langguth, and Yoshizumi to implement the first emission layer to third emission layer each have a thickness in a range of about 150 Å to about 500 Å because this can prevent charge imbalance.
Claims 6, 9, and 11 are rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021 as it relates to claim 1 and further in view of Leem et al.; US 2023/0015790 A1; 04/2022
Claim 6: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 5 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi appear to disclose a resonance distance of the organic photodiode is identical to that of the second light-emitting device.
However, Leem teaches a resonance distance of the organic photodiode is identical to that of the second light-emitting device ( [0186] a red photodiode #280a detecting light in a red wavelength region).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Leem with Hatsumi, Langguth, and Yoshizumi to implement a resonance distance of the organic photodiode is identical to that of the second light-emitting device because the photodiode needs to be optimally sensitive to the light emitted by that specific LED.
Claim 9: Hatsumi, Langguth, and Yoshizumi disclose the electronic apparatus of claim 1 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi appear to disclose the photoactive layer comprises a p-type semiconductor and an n-type semiconductor.
However, Leem teaches the photoactive layer comprises a p-type semiconductor and an n-type semiconductor ( [0123] The photoelectric conversion layer #130 may further include a counter material capable of forming a pn junction within the aforementioned infrared absorbing material ).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Leem with Hatsumi, Langguth, and Yoshizumi to implement the photoactive layer comprises a p-type semiconductor and an n-type semiconductor because this configuration is used to generate an electric current from light.
Claim 11: Hatsumi, Langguth, Yoshizumi, and Leem disclose the electronic apparatus of claim 9 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi disclose the photoactive layer has a bulk heterojunction structure of the p-type semiconductor and the n-type semiconductor.
However, Leem teaches the photoactive layer has a bulk heterojunction structure of the p-type semiconductor and the n-type semiconductor ( [0124] The photoelectric conversion layer #130 may include a mixed layer in which the infrared absorbing material and the counter material are mixed in the form of a bulk heterojunction ).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Leem with Hatsumi, Langguth, and Yoshizumi to implement the photoactive layer has a bulk heterojunction structure of the p-type semiconductor and the n-type semiconductor because this approach is used to maximize the device’s efficiency.
Claim 10 is rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021 and further in view of Leem et al.; US 2023/0015790 A1; 04/2022 as it relates to claim 9 and further in view of Zalar et al.; US 2019/0378880 A1; 01/2018
Claim 10: Hatsumi, Langguth, Yoshizumi, and Leem disclose the electronic apparatus of claim 9 (as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi nor Leem disclose the photoactive layer has a planar heterojunction structure of the p-type semiconductor and the n-type semiconductor.
However, Zalar teaches the photoactive layer ( Fig. 4 active layer #35) has a planar heterojunction structure of the p-type semiconductor and the n-type semiconductor ( [0043] a planar heterojunction type in which p-type and n-type organic semiconductor thin films are stacked ).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Zalar with Hatsumi, Langguth, and Yoshizumi to implement the photoactive layer has a planar heterojunction structure of the p-type semiconductor and the n-type semiconductor because this approach enhances device stability.
Claims 12 and 16 are rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021 and Leem et al.; US 2023/0015790 A1; 04/2022 as it relates to claim 9 above and further in view of Lee et al.; US 2025/0026730 A1; 07/2022
Claim 12: Hatsumi, Langguth, Yoshizumi, and Leem disclose the electronic apparatus of claim 9 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi, nor Leem appear to disclose the p-type semiconductor comprises a compound represented by Formula 110: Formula 110
PNG
media_image1.png
137
231
media_image1.png
Greyscale
wherein, in Formula 110, Ar111 and Ar112 are each independently a C6-C30 arylene group that is unsubstituted or substituted with at least one R10a or a C3-C30 heteroarylene group that is unsubstituted or substituted with at least one R10a, X111 is selected from -Se-, -Te-, -S(=O)-, -S(=O)2-, -N(Q111)-, -B(Q111)-, -C(Q111)(Q112)-, -Si(Q111)(Q112)-, and -Ge(Q111)(Q112)-, X112 and L111 are each independently selected from -O-, -S-, -Se-, -Te-, -S(=O)-, -S(=O)2-, -N(Q111)-, -B(Q111)-, -C(Q111)(Q112)-, -Si(Q111)(Q112)-, -Ge(Q111)(Q112)-, -(C(Q111)=C(Q112))-, and -(C(Q111)=N))-, when L111 is selected from -N(Q111)-, -B(Q111)-, -C(Q111)(Q112)-, -Si(Q111)(Q112)-, -Ge(Q111)(Q112)-, -(C(Q111)=C(Q112))-, and -(C(Q111)=N))-, L111 is optionally linked to Ar111 or Ar112 to form a condensed ring, Z111 is a C6-C30 carbocyclic group that is unsubstituted or substituted with at least one R10a and has at least one functional group selected from C=O, C=S, C=Se, and C=Te, or a C1-C30 heterocyclic group that is unsubstituted or substituted with at least one R10a and has at least one functional group selected from C=O, C=S, C=Se, and C=Te, R111 to R116 are each independently hydrogen, deuterium, a halogen, a cyano group, a nitro group, a hydroxy group, a C1-C30 alkyl group unsubstituted or substituted with at least one R10a, a C1-C30 alkoxy group unsubstituted or substituted with at least one R10a, a C6-C30 aryl group unsubstituted or substituted with at least one R10a, a C3-C30 heteroaryl group unsubstituted or substituted with at least one R10a, a C2-C30 acyl group unsubstituted or substituted with at least one R10a, or any combination thereof, R10a is: deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group; a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, or a C1-C60 alkoxy group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q11)(Q12)(Q13), -N(Q11)(Q12), -B(Q11)(Q12), -C(=O)(Q11), -S(=O)2(Q11), -P(=O)(Q11)(Q12), or any combination thereof; a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, or a C1-C60 heteroarylthio group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q21)(Q22)(Q23), -N(Q21)(Q22), -B(Q21)(Q22), -C(=O)(Q21), -S(=O)2(Q21), -P(=O)(Q21)(Q22), or any combination thereof; or -Si(Q31)(Q32)(Q33), -N(Q31)(Q32), -B(Q31)(Q32), -C(=O)(Q31), -S(=O)2(Q31), or -P(=O)(Q31)(Q32), and Q11 to Q13, Q21 to Q23, Q31, Q32, Q111, and Q112 are each independently: hydrogen; deuterium; -F; -Cl; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C60 alkyl group; a C2-C60 alkenyl group; a C2-C60 alkynyl group; a C1-C60 alkoxy group; or a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, each unsubstituted or substituted with deuterium, -F, a cyano group, a C1-C60 alkyl group, a C1-C60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof.
However, Lee teaches the p-type semiconductor comprises a compound represented by Formula 110: Formula 110
PNG
media_image1.png
137
231
media_image1.png
Greyscale
wherein, in Formula 110, Ar111 and Ar112 are each independently a C6-C30 arylene group that is unsubstituted or substituted with at least one R10a or a C3-C30 heteroarylene group that is unsubstituted or substituted with at least one R10a, X111 is selected from -Se-, -Te-, -S(=O)-, -S(=O)2-, -N(Q111)-, -B(Q111)-, -C(Q111)(Q112)-, -Si(Q111)(Q112)-, and -Ge(Q111)(Q112)-, X112 and L111 are each independently selected from -O-, -S-, -Se-, -Te-, -S(=O)-, -S(=O)2-, -N(Q111)-, -B(Q111)-, -C(Q111)(Q112)-, -Si(Q111)(Q112)-, -Ge(Q111)(Q112)-, -(C(Q111)=C(Q112))-, and -(C(Q111)=N))-, when L111 is selected from -N(Q111)-, -B(Q111)-, -C(Q111)(Q112)-, -Si(Q111)(Q112)-, -Ge(Q111)(Q112)-, -(C(Q111)=C(Q112))-, and -(C(Q111)=N))-, L111 is optionally linked to Ar111 or Ar112 to form a condensed ring, Z111 is a C6-C30 carbocyclic group that is unsubstituted or substituted with at least one R10a and has at least one functional group selected from C=O, C=S, C=Se, and C=Te, or a C1-C30 heterocyclic group that is unsubstituted or substituted with at least one R10a and has at least one functional group selected from C=O, C=S, C=Se, and C=Te, R111 to R116 are each independently hydrogen, deuterium, a halogen, a cyano group, a nitro group, a hydroxy group, a C1-C30 alkyl group unsubstituted or substituted with at least one R10a, a C1-C30 alkoxy group unsubstituted or substituted with at least one R10a, a C6-C30 aryl group unsubstituted or substituted with at least one R10a, a C3-C30 heteroaryl group unsubstituted or substituted with at least one R10a, a C2-C30 acyl group unsubstituted or substituted with at least one R10a, or any combination thereof, R10a is: deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group; a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, or a C1-C60 alkoxy group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q11)(Q12)(Q13), -N(Q11)(Q12), -B(Q11)(Q12), -C(=O)(Q11), -S(=O)2(Q11), -P(=O)(Q11)(Q12), or any combination thereof; a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, or a C1-C60 heteroarylthio group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q21)(Q22)(Q23), -N(Q21)(Q22), -B(Q21)(Q22), -C(=O)(Q21), -S(=O)2(Q21), -P(=O)(Q21)(Q22), or any combination thereof; or -Si(Q31)(Q32)(Q33), -N(Q31)(Q32), -B(Q31)(Q32), -C(=O)(Q31), -S(=O)2(Q31), or -P(=O)(Q31)(Q32), and Q11 to Q13, Q21 to Q23, Q31, Q32, Q111, and Q112 are each independently: hydrogen; deuterium; -F; -Cl; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C60 alkyl group; a C2-C60 alkenyl group; a C2-C60 alkynyl group; a C1-C60 alkoxy group; or a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, each unsubstituted or substituted with deuterium, -F, a cyano group, a C1-C60 alkyl group, a C1-C60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof ( [0122] In one embodiment of the present disclosure, the heterocyclic compound represented by Chemical Formula 1 above may be one or more selected from the compounds below: 1-1076 ).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Lee with Leem, Yoshizumi, and Hatsumi to implement the p-type semiconductor comprises a compound represented by Formula 110 (as discussed above) because this approach enhances intermolecular interactions.
Claim 16: Hatsumi, Langguth, Yoshizumi, Leem, and Lee disclose The electronic apparatus of claim 12 ( as discussed above).
Hatsumi teaches the first common layer comprises at least one selected from a hole injection layer, a hole transport layer, and an electron blocking layer ( [0152] For example, when the common layer #112 includes a hole-injection layer, the hole-injection layer functions as a hole-injection layer in the light-emitting element #190).
Claims 13 and 17 are rejected under U.S.C. 103 as being unpatentable over Hatsumi et al.; US 2022/0173174 A1; 02/2020 in view of Langguth et al.; US 2024/0172557 A1; 06/2022 and Yoshizumi et al.; US 2023/0232645 A1; 04/2021 and Leem et al.; US 2023/0015790 A1; 04/2022 as it relates to claim 9 and further in view of Hirose et al.; US 11,158,675 B2; 07/2017
Claim 13: Hatsumi, Langguth, Yoshizumi, and Leem disclose the electronic apparatus of claim 9 ( as discussed above).
Neither Hatsumi nor Langguth nor Yoshizumi, nor Leem appear to disclose the n-type semiconductor comprises a compound represented by Formula 120: Formula 120
PNG
media_image2.png
131
143
media_image2.png
Greyscale
wherein, in Formula 120, X121 and X122 are each independently O or NR125, R121 to R124 and R125 are each independently hydrogen, deuterium, a halogen, a cyano group, a nitro group, a hydroxy group, a C1-C30 alkyl group substituted or unsubstituted with at least one R10a, a C6-C30 aryl group substituted or unsubstituted with at least one R10a, a C3-C30 heteroaryl group substituted or unsubstituted with at least one R10a, or any combination thereof, and R10a is: deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group; a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, or a C1-C60 alkoxy group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q11)(Q12)(Q13), -N(Q11)(Q12), -B(Q11)(Q12), -C(=O)(Q11), -S(=O)2(Q11), -P(=O)(Q11)(Q12), or any combination thereof; a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, or a C1-C60 heteroarylthio group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q21)(Q22)(Q23), -N(Q21)(Q22), -B(Q21)(Q22), -C(=O)(Q21), -S(=O)2(Q21), -P(=O)(Q21)(Q22), or any combination thereof; or -Si(Q31)(Q32)(Q33), -N(Q31)(Q32), -B(Q31)(Q32), -C(=O)(Q31), -S(=O)2(Q31), or -P(=O)(Q31)(Q32), and Q11 to Q13, Q21 to Q23, Q31, Q32, Q111, and Q112 are each independently: hydrogen; deuterium; -F; -Cl; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C60 alkyl group; a C2-C60 alkenyl group; a C2-C60 alkynyl group; a C1-C60 alkoxy group; or a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, each unsubstituted or substituted with deuterium, -F, a cyano group, a C1-C60 alkyl group, a C1-C60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof.
However, Hirose teaches the n-type semiconductor comprises a compound represented by Formula 120: Formula 120
PNG
media_image2.png
131
143
media_image2.png
Greyscale
wherein ( Col. 45 line 58 – Col. 46 line 10 a naphthalene-1,4,5,6-tetracarboxylic dianhydride (an experimental example 32)), in Formula 120, X121 and X122 are each independently O or NR125, R121 to R124 and R125 are each independently hydrogen, deuterium, a halogen, a cyano group, a nitro group, a hydroxy group, a C1-C30 alkyl group substituted or unsubstituted with at least one R10a, a C6-C30 aryl group substituted or unsubstituted with at least one R10a, a C3-C30 heteroaryl group substituted or unsubstituted with at least one R10a, or any combination thereof, and R10a is: R10a is: deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, or a nitro group; a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, or a C1-C60 alkoxy group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q11)(Q12)(Q13), -N(Q11)(Q12), -B(Q11)(Q12), -C(=O)(Q11), -S(=O)2(Q11), -P(=O)(Q11)(Q12), or any combination thereof; a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, or a C1-C60 heteroarylthio group, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C60 carbocyclic group, a C1-C60 heterocyclic group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryloxy group, a C1-C60 heteroarylthio group, -Si(Q21)(Q22)(Q23), -N(Q21)(Q22), -B(Q21)(Q22), -C(=O)(Q21), -S(=O)2(Q21), -P(=O)(Q21)(Q22), or any combination thereof; or -Si(Q31)(Q32)(Q33), -N(Q31)(Q32), -B(Q31)(Q32), -C(=O)(Q31), -S(=O)2(Q31), or -P(=O)(Q31)(Q32), and Q11 to Q13, Q21 to Q23, Q31, Q32, Q111, and Q112 are each independently: hydrogen; deuterium; -F; -Cl; -Br; -I; a hydroxyl group; a cyano group; a nitro group; a C1-C60 alkyl group; a C2-C60 alkenyl group; a C2-C60 alkynyl group; a C1-C60 alkoxy group; or a C3-C60 carbocyclic group or a C1-C60 heterocyclic group, each unsubstituted or substituted with deuterium, -F, a cyano group, a C1-C60 alkyl group, a C1-C60 alkoxy group, a phenyl group, a biphenyl group, or any combination thereof ( Col 46. Formula (16)).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Hirose with Hatsumi, Langguth, Yoshizumi, and Leem to implement the p-type semiconductor comprises a compound represented by Formula 120 (as discussed above) because the selection of the specific components can be combined to create a high-performance material.
Claim 17: Hatsumi, Langguth, Yoshizumi, Leem, and Hirose disclose the electronic apparatus of claim 13 ( as discussed above).
Hatsumi teaches the second common layer comprises at least one selected from a buffer layer, a hole blocking layer, an electron transport layer, and an electron injection layer ( [0157] For example, when the common layer #114 includes an electron-injection layer).
Response to Amendment/Arguments
Applicant’s arguments, see page 9 paragraph I of remarks, filed 01/08/2026, with respect to objection to Drawings have been fully considered and are persuasive. The objection of 10/27/2025 has been withdrawn.
Applicant’s arguments, see pages 9 - 11 paragraph II of remarks, filed 01/08/2026, with respect to the rejection of claim 1 under 35 U.S.C. 103 have been fully considered and are persuasive. Therefore, the rejection has been withdrawn. However, upon further consideration, a new ground(s) of rejection is made in view of Langguth.
Applicant's arguments filed 01/08/2025 have been fully considered but they are not persuasive. On page 11 of the remarks, the argument with regard to obviousness of combining the teachings of Yoshizumi with Hatsumi. From the MPEP 2145 IV. Arguing Against References Individually: One cannot show nonobviousness by attacking references individually where the rejections are based on combinations of references. In re Keller, 642 F.2d 413, 208 USPQ 871 (CCPA 1981); In re Merck & Co., Inc., 800 F.2d 1091, 231 USPQ 375 (Fed. Cir. 1986). Where a rejection of a claim is based on two or more references, a reply that is limited to what a subset of the applied references teaches or fails to teach, or that fails to address the combined teaching of the applied references may be considered to be an argument that attacks the reference(s) individually. Where an applicant’s reply establishes that each of the applied references fails to teach a limitation and addresses the combined teachings and/or suggestions of the applied prior art, the reply as a whole does not attack the references individually as the phrase is used in Keller and reliance on Keller would not be appropriate. This is because "[T]he test for obviousness is what the combined teachings of the references would have suggested to [a PHOSITA]." In re Mouttet, 686 F.3d 1322, 1333, 103 USPQ2d 1219, 1226 (Fed. Cir. 2012)..
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to KIMBERLY N FREY whose telephone number is (571)272-5068. The examiner can normally be reached Monday - Friday 7:30 am - 5 pm.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Marlon Fletcher can be reached at (571)272-2063. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/K.N.F./Examiner, Art Unit 2817
/MARLON T FLETCHER/Supervisory Primary Examiner, Art Unit 2817