Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
The response of the applicant has been read and given careful consideration. Rejections of the previous action no appearing below are withdrawn based upon the amendment and arguments of the applicant. Responses to the arguments of the applicant are presented after the first rejection they are directed to. The proper TD filed 3/10/2026 obviates the ODP rejections
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claims 1-8 and 12-16 are rejected under 35 U.S.C. 103 as being unpatentable over
Mizutani et al. 20030134224 exemplifies repeating units
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on page 11. These are bounded by formula (II),
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wherein R.sub.1 represents a hydrogen atom, a halogen atom, a cyano group or an alkyl group that may have a substituent; R.sub.2 and R.sub.3, which may be the same or different, each represent a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group or, an alkyl, a cycloalkyl, an alkoxy, an acyl, an acyloxy, an alkenyl, anaryl or an aralkyl group, each of which may have a substituent; R.sub.4 represents a group represented by the following general formula (IV) or (V); R.sub.18 represents --C(R.sub.18d)(R.sub.18e)(R.sub.18f) or - C(R.sub.18d)(R.sub.18e)(OR.sub.- 18g); R.sub.18d to R.sub.18g, which may be the same or different, represents a hydrogen atom or, an alkyl, a cycloalkyl, an alkenyl, an aralkyl or an aryl group, each of which may have a substituent; two of R.sub.18d, R.sub.18e and R.sub.18f, or two of R.sub.18d, R.sub.18e and R.sub.18g may connect together to form a ring; at least one of R.sub.18d, R.sub.18e and R.sub.18f or at least one of R.sub.18d, R.sub.18e and R.sub.18g is a fluorine-containing group [0037-0038]. Polymer P-5 has the structure
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(page 41). It was combined with a photoacid generator, an imidosulfonate salt, solvents and a surfactant [0265]. The solution was then filtered, coated upon a silicon wafer, dried, exposed using KrF, post baked and developed in TMAH [0270]. The compound which generates an acid upon irradiation with one of an actinic ray and a radiation can be suitably selected from photo-initiators for cationic photo-polymerization, photo-initiators for radical photo-polymerization, photodecolouring agents for dyes, photodiscolouring agents and compounds which generate an acid upon irradiation with the known kinds of light now in practical use for in micro-resist fabrication, etc., (including UV light of 400 to 200 nm wavelength, deep UV light, particularly preferably the g-line, h-line and i-line and KrF excimer laser light), the ArF excimer laser light, the F.sub.2 excimer laser light, electron beam, X-ray, molecular beam or ion beam. Further, mixtures of these compounds may also be appropriately used [0216].
Mizutani et al. 20030134224 does not exemplify a monomer or polymerized monomer bounded by the claims as the exemplified repeating units have a fluorine substituent(s), and not the required trifluoromethoxy or difluoromethoxy substituent.
With respect to claims 1-8, it would have been obvious to modify the repeating units
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exemplified in Mizutani et al. 20030134224 by replacing the fluorine groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038]. Further, the obvious repeating unit is held to render the monomer from which it is derived to be obvious as well.
With respect to claims 1-8 and 12-16, it would have been obvious to modify the repeating units
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exemplified in Mizutani et al. 20030134224 by replacing the fluorine groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] and then replacing at least a portion of the phenolic repeating unit having an acid labile groups as a substituent of polymer P-5 with the resulting repeating unit with a reasonable expectation of forming a useful resist and then using the resulting resist in the exposure process of the examples with a reasonable expectation forming a useful resist pattern.
With respect to claims 1-8 and 12-16, it would have been obvious to modify the repeating units
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exemplified in Mizutani et al. 20030134224 by replacing the fluorine groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] and then replacing at least a portion of the phenolic repeating unit having an acid labile groups as a substituent of polymer P-5 with the resulting repeating unit with a reasonable expectation of forming a useful resist and then using the resulting resist in an exposure process similar to that of the examples but using an ArF excimer laser light, electron beam or X-ray (EUV) for the exposure with a reasonable expectation forming a useful resist pattern.
In the arguments of 3/10/2026, the applicant argues that the presence of the adjacent (di or tri) fluorinated (alkoxy or alkylthio) groups improves the solubility in the resist solvent and improves the acidity of the aromatic group generated by the exposure. The examiner has compared the performance of inventive examples using polymers P6, P7, P16 and P17 (R6, R7, R16, R17) with comparative examples using polymers CP 5 and CP8 (CR5, CR-8) and finds improvements in the sensitivity (optimum dose), exposure latitude (EL), line width roughness (LWR), depth of field (DOF) and collapse limit (see tables 5 and 6). However these benefits are not realized by the polymerizable monomer of claims 1-4 and are realized by the polymer only in the presence of a photoacid generator. Therefore the showing is not commensurate in scope with the coverage sought. This rejection would be obviated for claims to the resist including the polymer with repeating groups within the range of 15-80 mol% and a photoacid generator (see mol% in table 1 and the upper boundary of the range at [0157] of the prepub).
Claims 1-8 and 12-16 are rejected under 35 U.S.C. 103 as being unpatentable over Momose et al. WO 200406759 in view of Mizutani et al. 20030134224 and Masuyama et al. JP 2019214554.
Momose et al. WO 2004067592 (machine translation attached) exemplifies on page 59, repeating units.
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where R .sup.80 represents an acid leaving group (pages 58-59). Useful leaving groups include
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where In the formula (12-1), R .sup.101 represents a tertiary alkyl group having 4 to 20 carbon atoms, and s represents an integer of 0 to 10.
In the formula (12-2), R .sup.1C} 2 and R .sup.1 () 3 each independently represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 ^ • 18 carbon atoms, and R .sup.1Q4 represents Carbon number 1-2 Represents a monovalent hydrocarbon group which may contain 0 heteroatoms, or and R .sup.103 , R .sup.1 () 2 and R .sup.1 ( , or R .sup.1D3 and R .sup.104 represent the carbon to which they are attached Represents a cyclic hydrocarbon group together with an atom.
In the formula ( .sup.12-3 ), R .sup.1Q5 , R .sup.1Q6 , and R .sup.1Q7 each independently represent a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, or R .sup.1Q5 and R .sup.1Q6 , R .sup.1Q5 and R .sup.1Q7 , or R .sup.1Q6 and R .sup.1Q7 each represent a cyclic hydrocarbon group together with the carbon atom to which they are bonded. In the formula (12 4), representing R .sup.1Q8, R .sup.109 .sub.s R .sup.11Q each independently represent a hydrogen atom, Al kill group, a cycloalkyl group, an alkenyl group or § Li Ichiru group. Alternatively, R .sup.1Q8 and R .sup.1Q9 , R .sup.108 and R .sup.lt5 , or R .sup.1 () 9 and R .sup.110 together with the carbon atom to which they are attached represent a cyclic hydrocarbon group. However, at least two of R .sup.1Q8 , R .sup.1Q9 , and R .sup.110 represent a group other than hydrogen. A .sup.1Q1 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic .sup.substituent .
In the formula (12-5), I .sup.111 and R .sup.112 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group, and R .sup.113 represents an alkyl group or an aryl group. Or R .sup.111 and: .sup.112 , and R .sup.113 , or
R .sup.112 and R .sup.113 represent a cyclic hydrocarbon group or an aliphatic complex together with the carbon atom and oxygen atom to which they are bonded. However, at least two of II .sup.111 , R .sup.112 and R .sup.113 represent groups other than hydrogen. A .sup.1 Q 2 represents a divalent aromatic hydrocarbon group which may have .sup.one or more substituents.
In the formula (12-6), R .sup.114 , R .sup.115 and R .sup.116 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group. Alternatively, R .sup.114 and R .sup.115 , R .sup.114 and R .sup.116 , or R .sup.115 and R .sup.116 together with the silicon atom to which they are attached represent an aliphatic heterocycle. However, at least two of R .sup.114 , R .sup.115 and R .sup.116 represent groups other than hydrogen. A .sup.1 ( ) .sup.3 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent.
In the formula (12-7), R .sup.117 , R .sup.118 , and R .sup.119 each independently represent a hydrogen atom, Represents a kill group, a cycloalkyl group, an alkenyl group or an aryl group. Or R .sup.117 and R .sup.118 , R .sup.117 and R .sup.119 , or R .sup.118 and R .sup.119 together with the carbon atom to which they are attached represent a cyclic hydrocarbon group. However, among the .sup.R 117, R 1 18 s R 119, represents at least two groups other than hydrogen. A .sup.1Q4 represents a divalent aromatic hydrocarbon group which may have a mono- or polycyclic .sup.substituent . In the formula (12-8), R .sup.12G and R .sup.121 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group, and R .sup.122 represents an alkyl group or an aryl group. Or R .sup.12 . And R .sup.121 , R .sup.12 ° and R .sup.122 , or R .sup.121 and R .sup.122 together with the carbon and oxygen atoms to which they are attached represent a cyclic hydrocarbon group or an aliphatic complex. However, at least two of R .sup.12D , R .sup.121 and R .sup.122 represent groups other than hydrogen. .sup.A1Q5 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent.
In the formula (12-9), R .sup.123 , R .sup.124 and R .sup.125 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group. Alternatively, R .sup.123 and R .sup.124 , R .sup.123 and R .sup.125 , or R .sup.124 and R .sup.125 together with the silicon atom to which they are attached represent an aliphatic complex. However, at least two of R .sup.123 , R .sup.124 and R .sup.125 represent groups other than hydrogen. A .sup.1Q6 represents a divalent aromatic hydrocarbon group which may have a monocyclic or polycyclic substituent (pages 44-57). The polymers of the examples include the polymers of tables 1-4 and as in example 28 are combined with a photoacid generator, a amine/quencher and solvents, coated upon a silicon wafer, dried, exposed using an ArF laser, post baked, and developed in TMAH to yield a positive resist pattern (page 115-116).
Masuyama et al. JP 2019214554 (machine translation attached) teaches repeating units bounded by formula (I),
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, where R is a hydrogen atom or a methyl group. R is a C1-6 alkyl group. R is a hydrogen atom or a C1-6 alkyl group. Ar is an optionally substituted C6-36 divalent aromatic hydrocarbon group. R is an optionally substituted C1-12 fluorinated alkyl group. It can be combined with acid labile monomers bounded by formulae a1-1 and a1-2
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and combined with a PAG of formula B1 [0005].
Inventive examples use polymers A1 to A4.
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and combine these with photoacid generator B1-43 and quencher D12 and solvents. These were coated on a silicon wafer, dried, exposed using an electron beam, post baked and developed using tetramethylammonium hydroxide to form a positive resist image [0213-0216,0221-0227].
Comparative examples 3 and 4 used resist polymers AX3 and AX4.
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The comparative examples had a higher CDU value.
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The obtained composition layer is usually exposed using an exposure machine. The exposure machine may be an immersion exposure machine. The exposure light source, which emits laser light in a UV-region such as a KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F .sub.2 excimer laser (wavelength 157 nm), solid-state laser source (YAG or semiconductor laser And others that emit laser beams of higher harmonics in the far ultraviolet or vacuum ultraviolet region by converting the wavelength of the laser light from E.g. Can be. In this specification, irradiating these radiations may be collectively referred to as “exposure”. At the time of exposure, the exposure is usually performed through a mask corresponding to a required pattern. When the exposure light source is an electron beam, exposure may be performed by direct drawing without using a mask [0204].
Useful acid labile groups are bounded by formula (1)
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where R .sup.a1 , R .sup.a2 and R .sup.a3 each independently represent an alkyl group having 1 to 8 carbon atoms, an alicyclic hydrocarbon group having 3 to 20 carbon atoms, or a group obtained by combining these. R .sup.a1 and R .sup.a2 are bonded to each other to form an alicyclic hydrocarbon group having 3 to 20 carbon atoms together with the carbon atom to which they are bonded. ma and na each independently represent 0 or 1, and at least one of ma and na represents 1 [0018]. Exemplified acid labile groups include those of pages 12-13.
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Useful phenolic monomers are disclosed at [0049-0056]. Useful lactone monomers are disclosed at [0063-0069010]]. Useful fluorinated monomers are disclosed at [0070-0101]. Photoacid repeating units are disclosed on pages 41-46. Useful PAGs are disclosed at pages 47-70). Quenchers, including photobase generators and amines are disclosed at pages 71-72. The resist composition of the present invention may contain components other than the above components (hereinafter, sometimes referred to as “other components (F)”) as necessary. The other component (F) is not particularly limited, and additives known in the resist field, for example, sensitizers, dissolution inhibitors, surfactants, stabilizers, dyes, and the like can be used [0202]
Momose et al. WO 2004067592 does not exemplify a monomer or polymerized monomer bounded by the claims as the exemplified repeating units have a trifluoromethyl substituent, and not the required trifluoromethoxy or difluoromethoxy substituent.
With respect to claims 1,2 and 5-6, it would have been obvious to modify the repeating units
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by replacing the trifluoromethyl groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples). Further, the obvious repeating unit is held to render the monomer from which it is derived to be obvious as well.
With respect to claims 1-8, it would have been obvious to modify the repeating units
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by replacing the trifluoromethyl groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and to use known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554, Momose et al. WO 2004067592 or Mizutani et al. 20030134224 as the acid labile group with a reasonable expectation of forming a useful resist polymer.
With respect to claims 1-8 and 12-16, it would have been obvious to modify the repeating units
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by replacing the trifluoromethyl groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and to use known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554, Momose et al. WO 2004067592 or Mizutani et al. 20030134224 as the acid labile group and replacing at least a portion of the repeating unit having an acid labile group with a reasonable expectation of forming a useful resist polymer and then using the resulting resist polymer in a resist together with the solvent, photoacid generator and surfactant similar to the examples and in the exposure process of the examples with a reasonable expectation forming a useful resist pattern.
With respect to claims 1-8 and 12-16, it would have been obvious to modify the repeating units
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by replacing the trifluoromethyl groups, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and to use known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554, Momose et al. WO 2004067592 or Mizutani et al. 20030134224 as the acid labile group and replacing at least a portion of the repeating unit having an acid labile group with a reasonable expectation of forming a useful resist polymer and
then using the resulting resist polymer in a resist together with the solvent, photoacid generator and surfactant similar to the examples in an exposure process similar to that of the examples but using an ArF excimer laser light, electron beam or X-ray (EUV) for the exposure with a reasonable expectation forming a useful resist pattern based upon the disclosure of these exposure sources in Mizutani et al. 20030134224..
In the arguments of 3/10/2026, the applicant argues that the presence of the adjacent (di or tri) fluorinated (alkoxy or alkylthio) groups improves the solubility in the resist solvent and improves the acidity of the aromatic group generated by the exposure. The examiner has compared the performance of inventive examples using polymers P6, P7, P16 and P17 (R6, R7, R16, R17) with comparative examples using polymers CP 5 and CP8 (CR5, CR-8) and finds improvements in the sensitivity (optimum dose), exposure latitude (EL), line width roughness (LWR), depth of field (DOF) and collapse limit (see tables 5 and 6). However these benefits are not realized by the polymerizable monomer of claims 1-4. Additionally, the comparative data only uses fluorine adjacent to the acid labile group. The repeating units of Momose et al. WO 2004067592 exemplify the trifluoromethane adjacent to the acid leaving group, which is much more electronegative than the fluorine (see Hansch cited on the PTO-892, Table 1, entries 15,70,75,81,103,107,104) used in the examples of the instant application. It is not clear that the comparison in the instant specification represents a comparison which is equal or preferable to a direct comparison with the prior art. Additionally, any benefits are only realized by the polymer with 15 to 80 mol% of the recited repeating unit only in the presence of a photoacid generator. Therefore the showing is not commensurate in scope with the coverage sought (see mol% in table 1 and the upper boundary of the range at [0157] of the prepub).
Claims 1-16 are rejected under 35 U.S.C. 103 as being unpatentable over Hatakeyama et al. JP 2001174997, in view of Mizutani et al. 20030134224 and Masuyama et al. JP 2019214554.
Hatakeyama et al. JP 2001174997 (machine translation attached) teaches chemically amplified resists. Exemplifies resist polymers
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on page 20.
These are combined with a photoacid generator, solvents (and in two cases a crosslinker). (see table on page 19). The resist composition are spin coated upon a substrate, dried, exposed using KrF, post baked and developed in TMAH [0105-0107]. the material of the present invention is preferably a deep ultraviolet ray or excimer laser having a wavelength of 254 to 120 nm, especially an ArF, 157 nm F2, 146 nm Kr2, 134 nm Kr Excimer laser such as Ar, 126 nm Ar2, Most suitable for fine patterning by electron beam and electron beam [0103]. These are bounded by formula (1)
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where Wherein, R .sup.1 is a hydrogen atom, a fluorine atom, or a C1-20 linear, branched or cyclic alkyl groups or fluorinated alkyl groups; and R .sup.2 and R .sup.3 are a hydrogen atom or a fluorine atom. R .sup.4 is an acid labile group, and 0 ≦ a <5; 0 ≦ b <5, 0 <c <5, 0 ≦ d ≦ 5, 0 ≦ e ≦ 5, 0 ≦ f <5, 0 ≦ g <5, 0 <h <5, and 0 < a + b <5, 0 ≦ d + e ≦ 5, 0 <f + g <5, 0 <k <1, 0 ≦ m <1, 0 ≦ n <1, but R .sup.1 to R .sup.3 , a To h, k, m, and n are at least 1 are selected to have fluorine atoms [0016]. Useful acid labile groups are disclosed at [0022].
Hatakeyama et al. JP 2001174997 does not exemplify a monomer or polymerized monomer bounded by the claims as the exemplified repeating units have a fluorine substituent(s), and not the required trifluoromethoxy or difluoromethoxy substituent.
With respect to claims 1-10, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples). Further, the obvious repeating unit is held to render the monomer from which it is derived to be obvious as well.
With respect to claims 1-10, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and replacing the t-butoxy acid labile groups exemplified with known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554 or Mizutani et al. 20030134224 as the acid labile group and replacing at least a portion of the repeating unit having an acid labile group the resulting repeating unit with a reasonable expectation of forming a useful resist polymer. Further, the obvious repeating unit is held to render the monomer from which it is derived to be obvious as well.
With respect to claims 1-11, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and replacing the t-butoxy acid labile groups exemplified with known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554 or Mizutani et al. 20030134224 as the acid labile group and replacing at least a portion of the repeating unit having an acid labile group with the resulting repeating unit and adding a repeating unit with a pendant PAG as taught by Masuyama et al. JP 2019214554 at pages 41-46 with a reasonable expectation of forming a useful resist polymer. Further, the obvious repeating unit is held to render the monomer from which it is derived to be obvious as well.
With respect to claims 1-10 and 12-14, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and then using the resulting polymer together with the solvent, photoacid generator and surfactant similar to the resist compositions of the examples with a reasonable expectation of forming a useful resist composition. Further, it would have been obvious to add surfactants to the resist composition based upon the direction at [0202] of Masuyama et al. JP 2019214554.
With respect to claims 1-10 and 12-14, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples), replacing the t-butoxy acid labile groups exemplified with known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554 or Mizutani et al. 20030134224 as the acid labile group, replacing at least a portion of the repeating unit having an acid labile group and then using the resulting polymer together with the solvent, photoacid generator and surfactant similar to the resist compositions of the examples with a reasonable expectation of forming a useful resist composition. Further, it would have been obvious to add surfactants to the resist composition based upon the direction at [0202] of Masuyama et al. JP 2019214554.
With respect to claims 1-10 and 12-16, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and then using the resulting polymer together with the solvent, photoacid generator and surfactant similar to the resist compositions of the examples with a reasonable expectation forming a useful resist pattern. Further, it would have been obvious to add surfactants to the resist composition based upon the direction at [0202] of Masuyama et al. JP 2019214554.
With respect to claims 1-16, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples and adding a repeating unit with a pendant PAG as taught by Masuyama et al. JP 2019214554 at pages 41-46 and then using the resulting polymer together with the solvent, photoacid generator and surfactant similar to the resist compositions of the examples with a reasonable expectation forming a useful resist pattern. Further, it would have been obvious to add surfactants to the resist composition based upon the direction at [0202] of Masuyama et al. JP 2019214554.
With respect to claims 1-10 and 12-14, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples), replacing the t-butoxy acid labile groups exemplified with known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554 or Mizutani et al. 20030134224 as the acid labile group, replacing at least a portion of the repeating unit having an acid labile group and then using the resulting polymer together with the solvent, photoacid generator and surfactant similar to the resist compositions of the examples with a reasonable expectation forming a useful resist pattern. Further, it would have been obvious to add surfactants to the resist composition based upon the direction at [0202] of Masuyama et al. JP 2019214554.
With respect to claims 1-16, it would have been obvious to modify the repeating units having the acid labile repeating unit of resist polymers
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disclosed on page 20 of Hatakeyama et al. JP 2001174997 by replacing the fluorine moieties with a fluorinated alkoxy group with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of fluorine and fluoroalkyl groups in Hatakeyama et al. JP 2001174997 and the equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples), replacing the t-butoxy acid labile groups exemplified with known groups as the acid labile groups such as those disclosed in Masuyama et al. JP 2019214554 or Mizutani et al. 20030134224 as the acid labile group, replacing at least a portion of the repeating unit having an acid labile group, adding a photoacid repeating units are disclosed on pages 41-46 of Masuyama et al. JP 2019214554 and then using the resulting polymer together with the solvent, photoacid generator and surfactant similar to the resist compositions of the examples with a reasonable expectation forming a useful resist pattern. Further, it would have been obvious to add surfactants to the resist composition based upon the direction at [0202] of Masuyama et al. JP 2019214554.
In the arguments of 3/10/2026, the applicant argues that the presence of the adjacent (di or tri) fluorinated (alkoxy or alkylthio) groups improves the solubility in the resist solvent and improves the acidity of the aromatic group generated by the exposure. The examiner has compared the performance of inventive examples using polymers P6, P7, P16 and P17 (R6, R7, R16, R17) with comparative examples using polymers CP 5 and CP8 (CR5, CR-8) and finds improvements in the sensitivity (optimum dose), exposure latitude (EL), line width roughness (LWR), depth of field (DOF) and collapse limit (see tables 5 and 6). However these benefits are not realized by the polymerizable monomer of claims 1-4 and are realized by the polymer only in the presence of a photoacid generator. Therefore the showing is not commensurate in scope with the coverage sought. This rejection would be obviated for claims to the resist including the polymer with repeating groups within the range of 15-80 mol% and a photoacid generator (see mol% in table 1 and the upper boundary of the range at [0157] of the prepub).
Claims 1-8 and 12-16 are rejected under 35 U.S.C. 103 as being unpatentable over Zampini et al. 20020058199 in view of Mizutani et al. 20030134224 and Masuyama et al. JP 2019214554.
Zampini et al. 20020058199 exemplifies the resist polymer
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on page 9. Example 40 forms a copolymer of 4-tert-butoxy-2,3,5,6-tetrafluorostyrene and heptafluorobutyl acrylate [0211]. Example 39 forms a terpolymer of 4-tert-butoxy-2,3,5,6-tetrafluorostyrene, pentafluorostyrene and t-butyl( 2-(trifluoromethyl)acrylate [0210]. Useful monomers are bounded by the teachings of [0099]. The resist polymers of the examples are combined with a iodonium photoacid generator, amine salt, surfactant and solvent, coated upon a wafer, dried, exposed using F2 (157 nm), post baked and developed in TMAH [0185]. a resin of the invention can be formulated with an appropriate PAG and a sensitizer if needed and imaged at higher wavelengths such as about 193 nm or 248 nm [0167]
Zampini et al. 20020058199 does not exemplify a monomer or polymerized monomer bounded by the claims as the exemplified repeating units have a trifluoromethyl substituent, and not the required trifluoromethoxy or difluoromethoxy substituent.
With respect to claims 1-8, it would have been obvious to modify the repeating unit
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of Zampini et al. 20020058199 by replacing the trifluoromethyl group, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples). Further, the obvious repeating unit is held to render the monomer from which it is derived to be obvious as well.
With respect to claims 1-8 and 12-15, it would have been obvious to modify the repeating unit
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of Zampini et al. 20020058199 by replacing the trifluoromethyl group, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and then using the resulting polymer in a resist composition as in the examples in the exposure process of the examples with a reasonable expectation forming a useful resist pattern.
With respect to claims 1-8 and 12-15, it would have been obvious to modify the repeating unit
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of Zampini et al. 20020058199 by replacing the trifluoromethyl group, which is a fluorine substituted alkyl group with a difluoromethoxy or trifluoromethoxy group, which are fluorine substituted alkoxy groups with a reasonable expectation of forming a useful resist repeating unit based upon the disclosed equivalence of (substituted) alkyl and alkoxy groups at [0037-0038] of Mizutani et al. 20030134224 and the disclosure of the effect of replacing a trifluoromethyl substituent on phenyl ring with a trifluoromethoxy group in Masuyama et al. JP 2019214554 which this change improves the CDU (relative to the comparative examples) and then using the resulting polymer in a resist composition as in the examples and performing an exposure process similar to that of the examples, but using 193 (ArF) or 248 nm (KrF) exposure sources as taught at [0167] of Zampini et al. 20020058199 with a reasonable expectation forming a useful resist pattern.
In the arguments of 3/10/2026, the applicant argues that the presence of the adjacent (di or tri) fluorinated (alkoxy or alkylthio) groups improves the solubility in the resist solvent and improves the acidity of the aromatic group generated by the exposure. The examiner has compared the performance of inventive examples using polymers P6, P7, P16 and P17 (R6, R7, R16, R17) with comparative examples using polymers CP 5 and CP8 (CR5, CR-8) and finds improvements in the sensitivity (optimum dose), exposure latitude (EL), line width roughness (LWR), depth of field (DOF) and collapse limit (see tables 5 and 6). However these benefits are not realized by the polymerizable monomer of claims 1-4. Additionally, the comparative data only uses fluorine adjacent to the acid labile group. The repeating units of Momose et al. WO 2004067592 exemplify the trifluoromethane adjacent to the acid leaving group, which is much more electronegative than the fluorine (see Hansch cited on the PTO-892) used in the examples of the instant application. It is not clear that the comparison in the instant specification represents a comparison which is equal or preferable to a direct comparison with the prior art. Additionally, any benefits are only realized by the polymer with 15 to 80 mol% of the recited repeating unit only in the presence of a photoacid generator. Therefore the showing is not commensurate in scope with the coverage sought (see mol% in table 1 and the upper boundary of the range at [0157] of the prepub).
Claims 1-16 are rejected under 35 U.S.C. 103 as being unpatentable over Hatakeyama et al. JP 2001174997, in view of Mizutani et al. 20030134224 and Masuyama et al. JP 2019214554, further in view of Kawanishi JP 2006276759
Kawanishi JP 2006276759 (machine translation attached) teaches repeating unit (III)
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where R .sub.1 represents a hydrogen atom, a methyl group, a cyano group, a halogen atom or a perfluoro group. R .sub.2 represents a non-acid-decomposable group. X represents an organic group. n is an integer of 1 ≦ n ≦ 5, m is an integer of 0 ≦ m ≦ 5, and 1 ≦ n + m ≦ 5. Specific examples of the non-acid-decomposable group as R .sub.2 include, for example, a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an acyl group, —OC (═O) Ra, —OC (= O) ORa, -C (= O) ORa, -C (= O) N (Rb) Ra, -N (Rb) C (= O) Ra, -N (Rb) C (= O) ORa, -N (Rb) SO .sub.2 Ra, may be mentioned .sub.-SRa, -SO 2 Ra, -SO 3 Ra, or -SO .sub.2 N (Rb) Ra. Here, Ra and Rb each independently represents an alkyl group, a cycloalkyl group, or an aryl group. [0047,0018].
The combination of Hatakeyama et al. JP 2001174997, Mizutani et al. 20030134224 and Masuyama et al. JP 2019214554 does not teach the embodiments where the benzene ring is substituted with -SCF3 or -SCHF2 groups.
In addition to the basis above, the examiner holds that it would have been obvious to modify the monomers, repeating units, resist polymers, resist compositions and processes of using them rendered obvious by the combination of Hatakeyama et al. JP 2001174997, Mizutani et al. 20030134224 and Masuyama et al. JP 2019214554 by replacing the trifluoromethoxy or difluoromethoxy groups with -SCF3 or -SCHF2 based upon the equivalence of alkoxy (ORa) and thioalkoxy (SRa) groups established in Kawanishi JP 2006276759
The examiner relies upon the basis above without further comment.
Claims 1-16 are/are rejected under 35 U.S.C. 103 as being unpatentable over Masunaga et al. 20230367214.
Claim 5 recites a resist polymer including a repeating unit having the structure
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, where R5 is acid labile and R4 can be an optionally halogenated hydrocarbyloxy group.
Claims 1-3 recite phenolic repeating units.
Claim 8 recites PAG containing repeating units
Claim 9 recites a fluorinated polymer.
Claims 10 recites a solvent,
claims 11and 12 recites a PAG
claims 14 and 15 recite coating, exposure and development steps.
With respect to claims 1,2,5 and 6, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 5. The repeating unit is held to render the monomer obvious.
With respect to claims 1-11, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 5 and use this in the resist polymer including a phenolic repeating unit as in claims 1 and 2 and a PAG containing repeating unit bounded by claim 8 with a reasonable expectation of forming a useful resist polymer.
With respect to claims 1-14, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 5 and use this in the resist polymer including a phenolic repeating unit as in claims 1 and 2 and a PAG containing repeating unit bounded by claim 8 with a reasonable expectation of forming a useful resist polymer and to add a solvent as recited in claim 10, a photoacid generator as recited in claims 11 and 12 and a fluorinated polymer (surfactant) as recited in claim 9 with a reasonable expectation of forming a useful photoresist composition.
With respect to claims 1-16, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 5 and use this in the resist polymer including a phenolic repeating unit as in claims 1 and 2 and a PAG containing repeating unit bounded by claim 8 with a reasonable expectation of forming a useful resist polymer and to add a solvent as recited in claim 10, a photoacid generator as recited in claims 11 and 12 and a fluorinated polymer (surfactant) as recited in claim 9 with a reasonable expectation of forming a useful photoresist composition and using it in the exposure processes of claims 14 and 15 with a reasonable expectation of forming a useful photoresist pattern.
In the arguments of 3/10/2026, the applicant argues that the presence of the adjacent (di or tri) fluorinated (alkoxy or alkylthio) groups improves the solubility in the resist solvent and improves the acidity of the aromatic group generated by the exposure. The examiner has compared the performance of inventive examples using polymers P6, P7, P16 and P17 (R6, R7, R16, R17) with comparative examples using polymers CP 5 and CP8 (CR5, CR-8) and finds improvements in the sensitivity (optimum dose), exposure latitude (EL), line width roughness (LWR), depth of field (DOF) and collapse limit (see tables 5 and 6). However these benefits are not realized by the polymerizable monomer of claims 1-4. Additionally, the comparative data only uses fluorine adjacent to the acid labile group. The repeating units of Momose et al. WO 2004067592 exemplify the trifluoromethane adjacent to the acid leaving group, which is much more electronegative than the fluorine (see Hansch cited on the PTO-892) used in the examples of the instant application. It is not clear that the comparison in the instant specification represents a comparison which is equal or preferable to a direct comparison with the prior art. Additionally, any benefits are only realized by the polymer with 15 to 80 mol% of the recited repeating unit only in the presence of a photoacid generator. Therefore the showing is not commensurate in scope with the coverage sought (see mol% in table 1 and the upper boundary of the range at [0157] of the prepub).
Claims 1-10 and 12-16 are rejected under 35 U.S.C. 103 as being unpatentable over Masunaga et al. 20230194986.
Claim 1 recites a resist polymer including a repeating unit having the structure
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, where R5 is acid labile and R4 can be an optionally halogenated hydrocarbyloxy group.
Claims 1-2 recite phenolic repeating units.
Claim 10 recites a fluorinated polymer.
Claims 11 recites a solvent,
claims 12and 13 recites a PAG
claims 14 and 15 recite coating, exposure and development steps.
With respect to claims 1,2,5 and 6, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 1. The repeating unit is held to render the monomer obvious.
With respect to claims 1-10, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 1 and use this in the resist polymer including a phenolic repeating unit as in claims 1 and 2 with a reasonable expectation of forming a useful resist polymer.
With respect to claims 1-10 and 12-14, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 1 and use this in the resist polymer including a phenolic repeating unit as in claims 1 and 2 with a reasonable expectation of forming a useful resist polymer and to add a solvent as recited in claim 11, a photoacid generator as recited in claims 12 and 13 and a fluorinated polymer (surfactant) as recited in claim 10 with a reasonable expectation of forming a useful photoresist composition.
With respect to claims 1-10 and 12-16, it would have been obvious to one skilled in the art to form the repeating unit where R5 is an acid labile group and R4 is a difluorinated or trifluorinated methoxy groups as this is bounded by the optionally halogenated hydrocarbyloxy group language of claim 1 and use this in the resist polymer including a phenolic repeating unit as in claims 1 and 2 with a reasonable expectation of forming a useful resist polymer and to add a solvent as recited in claim 11, a photoacid generator as recited in claims 12 and 13 and a fluorinated polymer (surfactant) as recited in claim 10 with a reasonable expectation of forming a useful photoresist composition and using it in the exposure processes of claims 14 and 15 with a reasonable expectation of forming a useful photoresist pattern.
In the arguments of 3/10/2026, the applicant argues that the presence of the adjacent (di or tri) fluorinated (alkoxy or alkylthio) groups improves the solubility in the resist solvent and improves the acidity of the aromatic group generated by the exposure. The examiner has compared the performance of inventive examples using polymers P6, P7, P16 and P17 (R6, R7, R16, R17) with comparative examples using polymers CP 5 and CP8 (CR5, CR-8) and finds improvements in the sensitivity (optimum dose), exposure latitude (EL), line width roughness (LWR), depth of field (DOF) and collapse limit (see tables 5 and 6). However these benefits are not realized by the polymerizable monomer of claims 1-4. Additionally, the comparative data only uses fluorine adjacent to the acid labile group. The repeating units of Momose et al. WO 2004067592 exemplify the trifluoromethane adjacent to the acid leaving group, which is much more electronegative than the fluorine (see Hansch cited on the PTO-892) used in the examples of the instant application. It is not clear that the comparison in the instant specification represents a comparison which is equal or preferable to a direct comparison with the prior art. Additionally, any benefits are only realized by the polymer with 15 to 80 mol% of the recited repeating unit only in the presence of a photoacid generator. Therefore the showing is not commensurate in scope with the coverage sought (see mol% in table 1 and the upper boundary of the range at [0157] of the prepub).
THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
JP 2019035071 (machine translation attached), see page 10 and polymers A-7 and A-8 in the examples.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Martin J Angebranndt whose telephone number is (571)272-1378. The examiner can normally be reached 7-3:30 pm EST.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Mark F Huff can be reached at 571-272-1385. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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MARTIN J. ANGEBRANNDT
Primary Examiner
Art Unit 1737
/MARTIN J ANGEBRANNDT/Primary Examiner, Art Unit 1737 March 27, 2026
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