Prosecution Insights
Prosecution Insights
Tech Center 1700 • Art Units: 1713 1722 1737 1795
This examiner grants 56% of resolved cases
Martin J. Angebranndt, in Art Unit 1713 within Tech Center 1700, has resolved 1381 cases. The allowance rate is 55.5%, and the median days to allowance is 1143. This reflects a moderate allowance rate and pendency for applicants. The 1143-day median timeline is a key factor to consider when managing a patent portfolio before this examiner.
The interview lift is 34.0%, which is quite significant and suggests that interviews are a very effective way to improve outcomes. This lift can substantially increase the 55.5% base allowance rate, making personal engagement a primary strategy for practitioners. With 1381 resolved cases, the data shows that the examiner is highly responsive to verbal arguments. Practitioners should utilize the 34.0% lift to address rejections and potentially move the 1143-day process toward a grant. The 55.5% allowance rate provides a balanced starting point for prosecution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18417718 | METHOD OF MANUFACTURING A PHOTOMASK | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18404865 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18526038 | PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18317328 | EXTREME ULTRAVIOLET (EUV) PHOTOMASK | Final Rejection | Samsung Electronics Co., Ltd. |
| 18133118 | METHOD FOR FORMING RESIST PATTERN BY USING EXTREME ULTRAVIOLET LIGHT AND METHOD FOR FORMING PATTERN BY USING THE RESIST PATTERN AS MASK | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18200238 | PHOTOMASK AND METHOD OF MANUFACTURING DISPLAY PANEL USING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18277428 | RESIST FILM THICKENING COMPOSITION AND METHOD FOR MANUFACTURING THICKENED PATTERN | Final Rejection | MERCK PATENT GMBH |
| 18609116 | METHOD FOR TESTING PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING PHOTOSENSITIVE COMPOSITION | Non-Final OA | FujiFilm Corporation |
| 18588680 | ON-PRESS DEVELOPMENT TYPE LITHOGRAPHIC PRINTING PLATE PRECURSOR AND METHOD OF PREPARING PRINTING PLATE | Non-Final OA | FUJIFILM Corporation |
| 18333933 | FLEXOGRAPHIC PRINTING PLATE PRECURSOR AND MANUFACTURING METHOD OF FLEXOGRAPHIC PRINTING PLATE | Final Rejection | FUJIFILM Corporation |
| 18518135 | HOLOGRAPHIC RECORDING MEDIUM, HOLOGRAPHIC POLYMER MATERIAL, PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 18336111 | FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | Non-Final OA | CANON KABUSHIKI KAISHA |
| 18561978 | METHOD OF MAKING HOLOGRAMS USING LIQUID CRYSTAL MASTERS | Non-Final OA | Magic Leap, Inc. |
| 18068732 | PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST | Final Rejection | Intel Corporation |
| 17900065 | METHOD OF FORMING AN UNDERLAYER FOR EXTREME ULTRAVIOLET (EUV) DOSE REDUCTION AND STRUCTURE INCLUDING SAME | Non-Final OA | ASM IP Holding B.V. |
| 18005571 | METAL CHELATORS FOR DEVELOPMENT OF METAL-CONTAINING PHOTORESIST | Final Rejection | Lam Research Corporation |
| 18522662 | SYSTEM AND STRUCTURE INCLUDING A PELLICLE | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18508423 | PHOTORESIST COMPOSITION | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18118498 | PELLICLE AND METHOD OF MANUFACTURING THEREOF | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 17833830 | EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18404776 | MULTILAYER PROTECTION COATING WITH LAYERS OF DIFFERENT FUNCTIONS ON CARBON NANOTUBE | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18506864 | LOW VOLUME SHRINKAGE, HIGH ETCH RESISTANCE AND HIGH RESOLUTION PHOTORESISTS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18271018 | PHOTOSENSITIVE ELEMENT, AND METHOD FOR FORMING RESIST PATTERN | Non-Final OA | ASAHI KASEI KABUSHIKI KAISHA |
| 18235249 | TREATMENTS FOR THIN FILMS USED IN PHOTOLITHOGRAPHY | Non-Final OA | Applied Materials, Inc. |
| 16262102 | METHOD FOR PROCESSING A MASK SUBSTRATE TO ENABLE BETTER FILM QUALITY | Non-Final OA | Applied Materials, Inc. |
| 17899263 | ATTENUATED PHASE SHIFT MASK FOR TALBOT LITHOGRAPHY | Final Rejection | META PLATFORMS, INC. |
| 18318926 | HYBRID POLYMER/CRYSTAL PHOTOMECHANICAL MATERIALS | Non-Final OA | The Regents of the University of Colorado, a body corporate |
| 18349825 | NEGATIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMATION METHOD | Non-Final OA | TOKYO OHKA KOGYO CO., LTD. |
| 18039466 | REFLECTIVE MASK BLANK, REFLECTIVE MASK, REFLECTIVE MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | Final Rejection | HOYA CORPORATION |
| 17683110 | METHOD FOR MANUFACTURING MULTILAYERED-REFLECTIVE-FILM-PROVIDED SUBSTRATE, REFLECTIVE MASK BLANK AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING REFLECTIVE MASK | Non-Final OA | HOYA CORPORATION |
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