Prosecution Insights
Last updated: October 22, 2026
Application No. 18/356,408

OPTIMIZED CELL LAYOUT

Non-Final OA §102§103
Filed
Jul 21, 2023
Examiner
AISAKA, BRYCE M
Art Unit
Tech Center
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
88%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
98%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allowance Rate
659 granted / 753 resolved
+27.5% vs TC avg
Moderate +10% lift
Without
With
+10.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
15 currently pending
Career history
769
Total Applications
across all art units

Statute-Specific Performance

§101
20.2%
-19.8% vs TC avg
§103
32.7%
-7.3% vs TC avg
§102
21.1%
-18.9% vs TC avg
§112
22.6%
-17.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 753 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1,2, 5-7, and 28 is/are rejected under 35 U.S.C. 102(a)(1) as being unpatentable over Deng et al. US 2012/0185812 A1 (“Deng”). As to claim 1, Deng discloses a structure, comprising: a first semiconductor structure having a first channel with a first channel width (Figure 2 or Paragraphs 25 or 41 – e.g., FETs, e.g., 211a); and a second semiconductor structure having a second channel with a second channel width different from the first channel width (Figure 2 or Paragraphs 25 or 41 – e.g., FETs with a different channel width, e.g., 211b), wherein the first channel and the second channel are in contact with each other (Figure 2 or Paragraphs 25 or 41 – e.g., “connected to…the same electrical sub-circuit terminals”). As to claim 2, Deng discloses the structure of claim 1. Deng further discloses wherein the first semiconductor structure comprises a high speed performance semiconductor device (Figure 2 or Paragraphs 25 or 41 – e.g., FETs, e.g., 211a). As to claim 5, Deng discloses the structure of claim 1. Deng further discloses wherein a first gate of the first semiconductor structure is coupled to a second gate of the second semiconductor structure (Figure 2 or Paragraphs 25 or 41 – e.g., “connected to…the same electrical sub-circuit terminals”). As to claim 6, Deng discloses the structure of claim 1. Deng further discloses wherein a first gate of the first semiconductor structure is decoupled to a second gate of the second semiconductor structure (Figure 2 or Paragraphs 25 or 41 – e.g., nearly identical elements may be coupled, elements which are not nearly identical would be decoupled). As to claim 7, Deng discloses the structure of claim 1. Deng further discloses wherein a gate of the second semiconductor structure is coupled to a reference voltage, and wherein the reference voltage is a voltage drain or a voltage source (Paragraphs 22 or 29 – e.g., necessary in operating according to a power supply voltage). Claim 28 recites elements similar to claim 1, and is rejected for the same reasons. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claim(s) 3, 4, 10, 21, and 25 is/are rejected under 35 U.S.C. 103 as being unpatentable over Deng as applied to claim 1 above, and further in view of Chen et al. US 2002/0163835 A1 (“Chen”). As to claim 3, Deng discloses the structure of claim 1. Deng teaches multiple semiconductor structures including linked transistors, but does not explicitly disclose the additional elements of claim 3. However, the missing element is well known in the art because while disclosing circuit configurations, Chen teaches combinations of active and passive components and dummy cells used as part of a transistor and current source configuration (Chen Figure 4A-B or Paragraph 37). It would have been obvious to one having ordinary skill in the art at the time the invention was made for the second semiconductor structure to comprises a passive semiconductor device because similar configurations were well known in the art at the time the invention was made. As to claim 4, Deng discloses the structure of claim 1. Deng teaches multiple semiconductor structures including linked transistors, but does not explicitly disclose the additional elements of claim 4. However, the missing element is well known in the art because while disclosing circuit configurations, Chen teaches combinations of active and passive components and dummy cells used as part of a transistor and current source configuration (Chen Figure 4A-B or Paragraph 37). It would have been obvious to one having ordinary skill in the art at the time the invention was made to have a dummy gate, the dummy gate having a dummy gate width (a width necessary in a gate) because similar configurations were well known in the art at the time the invention was made. As to claim 10, Deng and Chen disclose the structure of claim 4. Deng and Chen further disclose wherein the dummy gate width is substantially similar to a first channel gate width of the first semiconductor structure or is substantially similar to a second channel gate width of the second semiconductor structure (Deng Figure 2 or Paragraphs 25 or 41 – e.g., FETs/structures associated with particular channel widths). Claim 21 recites elements similar to claims 1-3, and is rejected for the same reasons. Claims 25 recites elements similar to claim 6, and is rejected for the same reasons. Allowable Subject Matter Claims 8, 9, 22-24, 26, 27, 29, and 30 objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: The prior art does not teach or suggest a structure or method having the combination of elements/steps of the claims including, among other elements, the doping and spacing or relative width relations of the claims, in combination with the structural and connectivity details of the claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to BRYCE M AISAKA whose telephone number is (571)270-5808. The examiner can normally be reached M-F: 6:30AM-5:00PM PT. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jack Chiang can be reached at (571)272-7483. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /BRYCE M AISAKA/Primary Examiner, Art Unit 2851
Read full office action

Prosecution Timeline

Jul 21, 2023
Application Filed
Oct 07, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12762313
SYSTEMS AND METHODS FOR AUTOMATIC PIN MATCHING BETWEEN FUNCTIONAL BLOCKS IN A LAYOUT VIA A GRAPHIC-BASED LAYOUT EDITOR
3y 2m to grant Granted Oct 13, 2026
Patent 12737520
LOGIC DRIVE BASED ON STANDARD COMMODITY FPGA IC CHIPS
3y 5m to grant Granted Sep 15, 2026
Patent 12737523
AUTOMATED MULTI-STAGE DESIGN FLOW BASED ON FINAL QUALITY OF RESULT
3y 5m to grant Granted Sep 15, 2026
Patent 12737518
MACHINE LEARNING FOR NETLIST DESIGN
3y 3m to grant Granted Sep 15, 2026
Patent 12731063
AUTOMATIC QUANTUM CIRCUIT CONTROL SKIPS
3y 3m to grant Granted Sep 08, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
88%
Grant Probability
98%
With Interview (+10.3%)
2y 4m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 753 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month