Prosecution Insights
Last updated: April 19, 2026
Application No. 18/360,969

PROCESS FOR AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF ANTIREFLECTION COATINGS AND FILTERS

Non-Final OA §103
Filed
Jul 28, 2023
Examiner
BELOUSOV, ALEXANDER
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
California Institute Of Technology
OA Round
1 (Non-Final)
76%
Grant Probability
Favorable
1-2
OA Rounds
3y 0m
To Grant
92%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allow Rate
388 granted / 509 resolved
+8.2% vs TC avg
Strong +16% interview lift
Without
With
+16.2%
Interview Lift
resolved cases with interview
Typical timeline
3y 0m
Avg Prosecution
26 currently pending
Career history
535
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
61.6%
+21.6% vs TC avg
§102
25.5%
-14.5% vs TC avg
§112
12.2%
-27.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 509 resolved cases

Office Action

§103
DETAILED ACTION Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102 of this title, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 12-20 are rejected under 35 U.S.C. 103 as being unpatentable over (US-2016/0273958) by Hoenk et al (“Hoenk”). Regarding claim 12, Hoenk discloses in FIG. 7 and related text, e.g., a device manufactured by the method of claim 1 (For the purposes of rejection, claim 12 rejection is virtually identical to rejection of claim 13 (see directly below), because the method limitations are not given patentable weight in a claim drawn to device). Regarding the process limitations of claim 12, these would not carry patentable weight in this claim drawn to a structure, because distinct structure is not necessarily produced. Note that a "product by process" claim is directed to the product per se, no matter how actually made, In re Hirao, 190 USPQ 15 at 17 (footnote 3). See also In re Brown, 173 USPQ685; In re Luck, 177 USPQ 523; In re Fessmann, 180 USPQ 324; In re Avery, 186 USPQ 161; In re Wertheim, 191 USPQ 90 (209 USPQ 554 does not deal with this issue); and In re Marosi et al., 218 USPQ 289, all of which make it clear that it is the patentability of the final product per se which must be determined in a "product by process" claim, and not the patentability of the process, and that an old or obvious product produced by a new method is not patentable as a product, whether claimed in "product by process" claims or not. Note that the applicant has the burden of proof in such cases, as the above case law makes clear. Regarding claim 13, Hoenk discloses in FIG. 7 and related text, e.g., a device, comprising: a detector of electromagnetic radiation (702); and one or more antireflection (AR) and/or bandpass filter coatings (714) deposited on a surface of the light detector, wherein the AR and/or bandpass filter coatings are deposited on different portions of the light detector to provide a butcher-block style response profile (not shown in FIG. 7; see FIG. 5A; shows 3 different filters (a-c), all with “butcher-block style response profile”) with each of the different portions of the detector targeting a specific bandpass of the electromagnetic radiation (x-axis in FIG. 5A) and/or having a spatially varying photo-response to the electromagnetic radiation. Hoenk does not explicitly state that “one or more antireflection (AR) and/or bandpass filter coatings deposited on a surface of the light detector, wherein the AR and/or bandpass filter coatings are deposited on different portions of the light detector”. It would have been obvious to one of ordinary skill in the art at the time of the invention to modify the device of Hoenk with “one or more antireflection (AR) and/or bandpass filter coatings deposited on a surface of the light detector, wherein the AR and/or bandpass filter coatings are deposited on different portions of the light detector”, since Hoenk is explicitly teaching various filters (FIG. 5A) and alludes to putting them all together (par. 83), and the integration of the various devices into a single device is the whole purpose of integrated circuits and of semiconductor industry. Regarding claim 14, Hoenk discloses in FIG. 7 and related text, e.g., wherein the AR and/or bandpass filter coatings are deposited with different materials and/or different thicknesses on the different portions of the detector (pars. 83-87, also FIG. 8). Regarding claim 15, Hoenk discloses in FIG. 7 and related text, e.g., substantially the entire claim structure, as recited in above claims, except wherein the AR and/or bandpass filters are deposited with sub-nanometer precision. It would have been obvious to one of ordinary skill in the art at the time of the invention to further modify the device of Hoenk with “wherein the AR and/or bandpass filters are deposited with sub-nanometer precision”, in order to receive a more precisely functioning device (it is common sense (not even POSITA level knowledge) that the more precisely one forms a device (sub-nanometer precision in instant case), the more precisely will the final device function. Regarding claim 16, Hoenk discloses in FIG. 7 and related text, e.g., wherein the light detector consists essentially of a single material across the patterned surface (par. 96; “silicon epilayer 702”). Regarding claim 17, Hoenk discloses in FIG. 7 and related text, e.g., wherein the light detector consists essentially of silicon (par. 96; “silicon epilayer 702”). Regarding claim 18, Hoenk discloses in FIG. 7 and related text, e.g., wherein the light detector comprises a delta doped or a superlattice doped surface layer providing passivation of a near-surface band structure (706/708; pars. 78 & 100). Regarding claim 19, Hoenk discloses in FIG. 7 and related text, e.g., wherein the AR and/or bandpass filter coatings each have a bandwidth tailored for the different frequency response of the silicon to ultraviolet (UV) light (see FIG. 5A), so that the detector has a quantum efficiency greater than 50% (claim 12; “greater than 40%; hence, greater than 50% is at the very least obvious, by overlapping range) for UV wavelengths between 110 nm and 300 nm (see FIG. 5A; wavelengths between 110 nm and 300 nm are shown). Regarding claim 20, Hoenk discloses in FIG. 7 and related text, e.g., wherein the AR coatings comprise a metal oxide or a metal fluoride (par. 69) and/or the filter is a Fabry Perot cavity (par. 82) comprising a reflective metal layer between two dielectric layers (see FIG. 5A; such an example is explicitly shown). Conclusion Additional references (if any) are cited on the PTO-892 as disclosing similar features to those of the instant invention. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Alexander Belousov whose telephone number is (571)-272-3167. The examiner can normally be reached on 10 am-4 pm. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Jeff Natalini can be reached on 571-272-2266. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Alexander Belousov/Patent Examiner, Art Unit 2894 03/21/26 /Mounir S Amer/Primary Examiner, Art Unit 2818
Read full office action

Prosecution Timeline

Jul 28, 2023
Application Filed
Mar 21, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
76%
Grant Probability
92%
With Interview (+16.2%)
3y 0m
Median Time to Grant
Low
PTA Risk
Based on 509 resolved cases by this examiner. Grant probability derived from career allow rate.

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