Prosecution Insights
Last updated: April 19, 2026
Application No. 18/368,128

PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Non-Final OA §101§102§DP
Filed
Sep 14, 2023
Examiner
PHAM, LONG
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Nanya Technology Corporation
OA Round
1 (Non-Final)
91%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
97%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allow Rate
1493 granted / 1633 resolved
+23.4% vs TC avg
Moderate +6% lift
Without
With
+5.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
38 currently pending
Career history
1671
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
39.9%
-0.1% vs TC avg
§102
41.8%
+1.8% vs TC avg
§112
11.1%
-28.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1633 resolved cases

Office Action

§101 §102 §DP
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 1-11 in the reply filed on 12/18/25 is acknowledged. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-9 and 11 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lin et al. (US pub 20080017961). With respect to claim 1, Lin et al. teach a package structure, comprising (see figs. 1-3H, particularly figs. 3D and 3F and associated text): a first substrate 210 (left portion) including a first patterned circuit layer 230 (left portion) and defining a first through hole 216 (left portion); a first electronic component 220 (left portion) disposed over the first through hole of the first substrate, wherein the first electronic component is electrically connected to the first patterned circuit layer of the first substrate through an extending portion of the first patterned circuit layer extending beyond a sidewall of the first through hole; a second substrate 210 (right portion) including a second patterned circuit layer 230 (right portion) and defining a second through hole 216 (right portion); and a second electronic component 220 (right portion) disposed over the second through hole of the second substrate, wherein the second electronic component is electrically connected to the second patterned circuit layer of the second substrate through an inner extending portion of the second patterned circuit layer extending beyond a sidewall of the second through hole. With respect to claim 2, Lin et al. teach the first substrate has a first surface (top) and a second surface (bottom) opposite to the first surface, and the first electronic component is attached to the first surface of the first substrate. See fig. 3D and 3F and associated text. With respect to claim 3, Lin et al. teach a first active surface (bottom) of the first electronic component has a first portion (middle) and a second portion (edge), the first portion of the first active surface of the first electronic component is exposed in the first through hole of the first substrate, and the second portion of the first active surface of the first electronic component is adhered to the first surface of the first substrate through a first adhesion layer (layer between 220 and 210). See fig. 3D and 3F and associated text. With respect to claim 4, Lin et al. teach the second portion of the first active surface of the first electronic component surrounds the first portion of the first active surface of the first electronic component. See fig. 3D and 3F and associated text. With respect to claim 5, Lin et al. teach the first patterned circuit layer is disposed adjacent to the first surface of the first substrate. See fig. 3D and 3F and associated text. With respect to claim 6, Lin et al. teach the first electronic component includes at least one first bump 224 disposed adjacent to a first active surface thereof, and the extending portion of the first patterned circuit layer is connected to the at least one first bump of the first electronic component. See fig. 3D and 3F and associated text. With respect to claim 7, Lin et al. teach a package body 240 (under 220) disposed in the first through hole of the first substrate and encapsulating the extending portion of the first patterned circuit layer, wherein the package body contacts a first active surface of the first electronic component. See fig. 3D and 3F and associated text. With respect to claim 8, Lin et al. teach the package body is further disposed on the first surface of the first substrate and encapsulating the first electronic component and the second electronic component. See fig. 3D and 3F and associated text. With respect to claim 9, Lin et al. teach the extending portion of the first patterned circuit layer and the first patterned circuit layer are at the same layer. See fig. 3D and 3F and associated text. With respect to claim 11, Lin et al. teach the first patterned circuit layer is formed from a metal foil. See fig. 3D and 3F and associated text. Double Patenting A rejection based on double patenting of the “same invention” type finds its support in the language of 35 U.S.C. 101 which states that “whoever invents or discovers any new and useful process... may obtain a patent therefor...” (Emphasis added). Thus, the term “same invention,” in this context, means an invention drawn to identical subject matter. See Miller v. Eagle Mfg. Co., 151 U.S. 186 (1894); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Ockert, 245 F.2d 467, 114 USPQ 330 (CCPA 1957). A statutory type (35 U.S.C. 101) double patenting rejection can be overcome by canceling or amending the claims that are directed to the same invention so they are no longer coextensive in scope. The filing of a terminal disclaimer cannot overcome a double patenting rejection based upon 35 U.S.C. 101. Claims 1-11 is/are rejected under 35 U.S.C. 101 as claiming the same invention as that of claims 1-11 of prior U.S. Patent No. 18071797. This is a statutory double patenting rejection. Allowable Subject Matter Claim 10 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Examiner’s Cited References The cited references generally show the similar or related structure having a first component over a first substrate including a first patterned conductor and a first through hole and the first component is connected to the first patterned connector and a second component over a second substrate including a second patterned conductor and a second through hole and the second component is connected to the second patterned connector as presently claimed by applicant. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to LONG PHAM whose telephone number is (571)272-1714. The examiner can normally be reached Mon-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jacob Choi can be reached at 469-295-9060. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. LONG . PHAM Examiner Art Unit 2823 /LONG PHAM/Primary Examiner, Art Unit 2897
Read full office action

Prosecution Timeline

Sep 14, 2023
Application Filed
Mar 17, 2026
Non-Final Rejection — §101, §102, §DP
Apr 07, 2026
Response Filed

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604733
PACKAGE STRUCTURES WITH COLLAPSE CONTROL FEATURES
2y 5m to grant Granted Apr 14, 2026
Patent 12604754
PACKAGE STRUCTURES WITH NON-UNIFORM INTERCONNECT FEATURES
2y 5m to grant Granted Apr 14, 2026
Patent 12604766
SEMICONDUCTOR PACKAGE STRUCTURE
2y 5m to grant Granted Apr 14, 2026
Patent 12604739
Semiconductor Device and Method of Forming a 3-D Stacked Semiconductor Package Structure
2y 5m to grant Granted Apr 14, 2026
Patent 12599033
QUASI-MONOLITHIC INTEGRATED PACKAGING ARCHITECTURE WITH MID-DIE SERIALIZER/DESERIALIZER
2y 5m to grant Granted Apr 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
91%
Grant Probability
97%
With Interview (+5.6%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 1633 resolved cases by this examiner. Grant probability derived from career allow rate.

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