Prosecution Insights
Last updated: April 19, 2026
Application No. 18/407,368

PLASMA ETCHER WITH EDGE RING AND METHOD OF PROCESSING SEMICONDUCTOR DEVICE USING THE SAME

Non-Final OA §102
Filed
Jan 08, 2024
Examiner
KENDALL, BENJAMIN R
Art Unit
2896
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company Ltd.
OA Round
1 (Non-Final)
32%
Grant Probability
At Risk
1-2
OA Rounds
4y 2m
To Grant
56%
With Interview

Examiner Intelligence

Grants only 32% of cases
32%
Career Allow Rate
150 granted / 467 resolved
-35.9% vs TC avg
Strong +24% interview lift
Without
With
+23.8%
Interview Lift
resolved cases with interview
Typical timeline
4y 2m
Avg Prosecution
48 currently pending
Career history
515
Total Applications
across all art units

Statute-Specific Performance

§101
0.9%
-39.1% vs TC avg
§103
62.5%
+22.5% vs TC avg
§102
11.3%
-28.7% vs TC avg
§112
22.7%
-17.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 467 resolved cases

Office Action

§102
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Election/Restrictions Claims 7-20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b), as being drawn to nonelected inventions, there being no allowable generic or linking claim. Applicant timely traversed the restriction (election) requirement in the reply filed on 11/24/2025. Applicant's election with traverse of Invention I (edge ring), drawn to claims 1-6, in the reply filed on 11/24/2025 is acknowledged. The traversal is on the ground(s) that the combination of invention III (plasma etcher) requires the particulars of the subcombination as claimed for patentability. This is not found persuasive because the edge ring of the combination does NOT require “a lower opening sized to receive an electrostatic chuck supporting a semiconductor device”. The requirement is still deemed proper and is therefore made FINAL. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-6 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by McMillin et al (US 2014/0235063). Regarding claim 1: McMillin teaches an edge ring (400/500) for a plasma etcher [fig 2 & 0034], the edge ring (400/500) comprising: a circular lower portion (500) having a lower opening sized to receive an electrostatic chuck (210 is an electrostatic chuck assembly) supporting a semiconductor device (220) [fig 2 & 0032, 0034]; and a circular upper portion (400) disposed on the circular lower portion (500), wherein the circular upper (400) portion and the circular lower portion (500) have different materials (400 is SiC and 500 is anodized aluminum) [fig 2 & 0034]. Regarding claims 2-3: McMillin teaches the circular upper portion (400) comprises: a first portion (lower part of 400) having a first opening sized to receive the electrostatic chuck (210) [fig 2 & 0032, 0034]; and a second portion (upper part of 400) disposed on the first portion (lower part of 400) and having a second opening, the second opening sized to receive the semiconductor device (220), wherein a lateral width of the second opening is substantially greater than a lateral width of the first opening (see fig 2) [fig 2 & 0032, 0034]; wherein the first portion (lower part of 400) completely covers a top surface of the circular lower portion (top surface of 500) [fig 2 & 0034]. The claim limitations “wherein the first portion is in contact with a sidewall of the electrostatic chuck” are merely intended use and are given weight to the extent that the prior art is capable of performing the intended use. A claim containing a “recitation with respect to the manner in which a claimed apparatus is intended to be employed does not differentiate the claimed apparatus from a prior art apparatus” if the prior art apparatus teaches all the structural limitations of the claim. Ex parte Masham, 2 USPQ2d 1647 (Bd. Pat. App. & Inter. 1987). Regarding claims 4-6: McMillin teaches a dielectric constant of the circular upper portion (400 is SiC) is substantially greater than a dielectric constant of the circular lower portion (500 is anodized aluminum) [fig 2 & 0034]; wherein an electrical conductivity of the circular lower portion (500 is anodized aluminum) is substantially greater than an electrical conductivity of the circular upper portion (400 is SiC); and wherein a material of the circular lower portion (500) is anodized aluminum (anodized aluminum), and a material of the circular upper portion (400) is silicon carbide (SiC) [fig 2 & 0034]. Products of identical chemical composition cannot have mutually exclusive properties. A chemical composition and its properties are inseparable. Therefore, if the prior art teaches the identical chemical structure, the properties applicant discloses and/or claims are necessarily present. In re Spada, 911 F.2d 705, 709, 15 USPQ2d 1655, 1658 (Fed. Cir. 1990) [MPEP 2112.01]. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Daugherty et al (US 6,344,105) teaches an edge ring comprising a circular lower portion and a circular upper portion [fig 5]. Any inquiry concerning this communication or earlier communications from the examiner should be directed to BENJAMIN R KENDALL whose telephone number is (571)272-5081. The examiner can normally be reached Mon - Thurs 9-5 EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William F Kraig can be reached at (571)272-8660. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Benjamin Kendall/Primary Examiner, Art Unit 2896
Read full office action

Prosecution Timeline

Jan 08, 2024
Application Filed
Jan 06, 2026
Non-Final Rejection — §102
Feb 23, 2026
Interview Requested
Mar 03, 2026
Applicant Interview (Telephonic)
Mar 03, 2026
Examiner Interview Summary

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12577654
MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS
2y 5m to grant Granted Mar 17, 2026
Patent 12573599
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
2y 5m to grant Granted Mar 10, 2026
Patent 12568800
CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING
2y 5m to grant Granted Mar 03, 2026
Patent 12562354
PLASMA PROCESSING APPARATUS AND TEMPERATURE CONTROLLING METHOD
2y 5m to grant Granted Feb 24, 2026
Patent 12557584
SEMICONDUCTOR PROCESSING STATION AND SEMICONDUCTOR PROCESS USING THE SAME
2y 5m to grant Granted Feb 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
32%
Grant Probability
56%
With Interview (+23.8%)
4y 2m
Median Time to Grant
Low
PTA Risk
Based on 467 resolved cases by this examiner. Grant probability derived from career allow rate.

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