Prosecution Insights
Last updated: October 02, 2026
Application No. 18/407,368

PLASMA ETCHER WITH EDGE RING AND METHOD OF PROCESSING SEMICONDUCTOR DEVICE USING THE SAME

Final Rejection §102
Filed
Jan 08, 2024
Examiner
KENDALL, BENJAMIN R
Art Unit
2896
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
3 (Final)
33%
Grant Probability
At Risk
4-5
OA Rounds
1y 2m
Est. Remaining
55%
With Interview

Examiner Intelligence

Grants only 33% of cases
33%
Career Allowance Rate
163 granted / 488 resolved
-34.6% vs TC avg
Strong +22% interview lift
Without
With
+21.5%
Interview Lift
resolved cases with interview
Typical timeline
3y 11m
Avg Prosecution
33 currently pending
Career history
526
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
64.0%
+24.0% vs TC avg
§102
10.4%
-29.6% vs TC avg
§112
22.9%
-17.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 488 resolved cases

Office Action

§102
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Status of Claims 3. This action is in response to Applicant’s RCE dated 08/07/2026. 4. Claims 1-20 are currently pending. 5. Claims 7-20 have been withdrawn. 6. Claims 1, 7, and 16 have been amended. Continued Examination Under 37 CFR 1.114 7. A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 08/07/2026 has been entered. Claim Rejections - 35 USC § 102 8. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. 9. Claim(s) 1-6 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by McMillin et al (US 2014/0235063). Regarding claim 1: McMillin teaches an edge ring (400/500) for a plasma etcher [fig 2 & 0034], the edge ring (400/500) comprising: a circular lower portion (500) having a lower opening sized to receive an electrostatic chuck (210 is an electrostatic chuck assembly) supporting a semiconductor device (220) [fig 2 & 0032, 0034]; and a circular upper portion (400) disposed on the circular lower portion (500), wherein the circular upper (400) portion and the circular lower portion (500) have different materials (400 is SiC and 500 is anodized aluminum) [fig 2 & 0034], wherein the circular upper portion (400) comprises: a first portion (lower part of 400) having a first opening (see fig 2) [fig 2 & 0032, 0034]; and a second portion (upper part of 400) disposed on the first portion (lower part of 400) and having a second opening different from the first opening (see fig 2) [fig 2 & 0032, 0034], wherein a sidewall of the first portion (400 can have an inner diameter of about 11.636 inches ± 0.10% ~ e.g. 11.634 inches) adjacent to the electrostatic chuck is vertically coincident with a sidewall of the circular lower portion (500 can have an inner diameter of about 11.634 inches ± 0.10% ~ e.g. 11.634 inches) adjacent to the electrostatic chuck [0046, 0048, 0051]. The claim limitations “wherein both of the first portion and the circular lower portion are in contact with a sidewall of the electrostatic chuck” are merely intended use and are given weight to the extent that the prior art is capable of performing the intended use. A claim containing a “recitation with respect to the manner in which a claimed apparatus is intended to be employed does not differentiate the claimed apparatus from a prior art apparatus” if the prior art apparatus teaches all the structural limitations of the claim. Ex parte Masham, 2 USPQ2d 1647 (Bd. Pat. App. & Inter. 1987). It is noted that the electrostatic chuck is NOT a positively recited structure of the edge ring. A claim is only limited by positively recited elements. In re Casey, 370 F.2d 576, 152 USPQ 235 (CCPA 1967). It is noted that the above limitations merely defines where applicant intends to position the edge ring relative to a structure (electrostatic chuck) external therefrom. The edge ring of McMillin is capable of surrounding an electrostatic chuck of a diameter and/or shape in contact with both of the first portion and the circular lower portion. Regarding claims 2-3: McMillin teaches the first opening (opening of lower part of 400) is sized to receive the electrostatic chuck (210) [fig 2 & 0032, 0034]; and the second opening (opening of upper part of 400) is sized to receive the semiconductor device (220), wherein a lateral width of the second opening is substantially greater than a lateral width of the first opening (see fig 2) [fig 2 & 0032, 0034]; wherein the first portion (lower part of 400) completely covers a top surface of the circular lower portion (top surface of 500) [fig 2 & 0034, 0046, 0048, 0051]. Regarding claims 4-6: McMillin teaches a dielectric constant of the circular upper portion (400 is SiC) is substantially greater than a dielectric constant of the circular lower portion (500 is anodized aluminum) [fig 2 & 0034]; wherein an electrical conductivity of the circular lower portion (500 is anodized aluminum) is substantially greater than an electrical conductivity of the circular upper portion (400 is SiC); and wherein a material of the circular lower portion (500) is anodized aluminum (anodized aluminum), and a material of the circular upper portion (400) is silicon carbide (SiC) [fig 2 & 0034]. Products of identical chemical composition cannot have mutually exclusive properties. A chemical composition and its properties are inseparable. Therefore, if the prior art teaches the identical chemical structure, the properties applicant discloses and/or claims are necessarily present. In re Spada, 911 F.2d 705, 709, 15 USPQ2d 1655, 1658 (Fed. Cir. 1990) [MPEP 2112.01]. Response to Arguments 10. Applicant's arguments, see Remarks, filed 08/07/2026, with respect to the rejection of claim(s) 1-6 under 35 USC 102(a)(1) have been fully considered but they are not persuasive. Applicant argues that McMillin depicts the sidewall of the lower part of 400 being misaligned with the sidewall of 500 in figure 2. In response, it is noted that the written specification anticipates the claim. McMillin teaches wherein a sidewall of the first portion (400 can have an inner diameter of about 11.636 inches ± 0.10% ~ e.g. 11.634 inches) adjacent to the electrostatic chuck is vertically coincident with a sidewall of the circular lower portion (500 can have an inner diameter of about 11.634 inches ± 0.10% ~ e.g. 11.634 inches) adjacent to the electrostatic chuck [0046, 0048, 0051]. It is noted that applicant was aware of examiner’s position [see interview summary and appendix dated 03/05/2026]. Conclusion 11. The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Daugherty et al (US 6,344,105) teaches an edge ring comprising a circular lower portion and a circular upper portion [fig 5]. 12. All claims are identical to or patentably indistinct from, or have unity of invention with claims in the application prior to the entry of the submission under 37 CFR 1.114 (that is, restriction (including a lack of unity of invention) would not be proper) and all claims could have been finally rejected on the grounds and art of record in the next Office action if they had been entered in the application prior to entry under 37 CFR 1.114. Accordingly, THIS ACTION IS MADE FINAL even though it is a first action after the filing of a request for continued examination and the submission under 37 CFR 1.114. See MPEP § 706.07(b). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to BENJAMIN R KENDALL whose telephone number is (571)272-5081. The examiner can normally be reached Mon - Thurs 9-5 EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William F Kraig can be reached at (571)272-8660. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Benjamin Kendall/Primary Examiner, Art Unit 2896
Read full office action

Prosecution Timeline

Show 2 earlier events
Feb 23, 2026
Interview Requested
Mar 03, 2026
Applicant Interview (Telephonic)
Mar 03, 2026
Examiner Interview Summary
May 04, 2026
Response Filed
May 08, 2026
Final Rejection mailed — §102
Aug 07, 2026
Request for Continued Examination
Aug 12, 2026
Response after Non-Final Action
Sep 14, 2026
Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
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Patent 12712159
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

4-5
Expected OA Rounds
33%
Grant Probability
55%
With Interview (+21.5%)
3y 11m (~1y 2m remaining)
Median Time to Grant
High
PTA Risk
Based on 488 resolved cases by this examiner. Grant probability derived from career allowance rate.

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