Tech Center 2800 • Art Units: 1714 1716 1718 2837 2896
This examiner grants 33% of resolved cases
Benjamin R Kendall works in Tech Center 2800 and Art Unit 1714. He has 488 resolved cases. The allowance rate pct is 33.4. This 33.4 allowance rate pct provides a measure of the outcomes for applications on his docket. The 488 resolved cases serve as a basis for evaluating prosecution in Art Unit 1714.
The interview lift pct is 21.5. This 21.5 interview lift pct indicates the correlation between conducting an interview and the probability of an allowance. Practitioners can use the 21.5 figure when deciding whether to engage in verbal advocacy with the examiner. This metric is a component of the data for Tech Center 2800.
The median days to allowance is 1437. This 1437 median days to allowance represents the time required for an application to reach a grant. The 1437 figure is a timeline for the prosecution process from filing to resolution. These metrics provide a view of the examiner's history across the 488 resolved cases.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18235653 | SUBSTRATE PROCESSING APPARATUS | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18447479 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18239176 | SYSTEM AND APPARATUS FOR A REACTION CHAMBER | Non-Final OA | ASM IP Holding B.V. |
| 18351227 | FLOW CONTROL ARRANGEMENTS WITH ENCLOSED FLOW SWITCHES AND ISOLATION VALVES, SEMICONDUCTOR PROCESSING SYSTEMS, AND FLOW CONTROL METHODS | Non-Final OA | ASM IP Holding, B.V. |
| 18129932 | GAS-DELIVERY ASSEMBLY AND REACTOR SYSTEM INCLUDING SAME | Non-Final OA | ASM IP Holding B.V. |
| 18578100 | Equipment For Manufacturing Light-Emitting Device | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 18454234 | PIPING, SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Kioxia Corporation |
| 17917547 | SUBSTRATE PROCESSING DEVICE AND METHOD | Final Rejection | JUSUNG ENGINEERING CO., LTD. |
| 19206157 | Vacuum arrangement and method | Non-Final OA | VON ARDENNE Asset GmbH & Co. KG |
| 18010423 | OPTIMIZING EDGE RADICAL FLUX IN A DOWNSTREAM PLASMA CHAMBER | Non-Final OA | LAM RESEARCH CORPORATION |
| 18407368 | PLASMA ETCHER WITH EDGE RING AND METHOD OF PROCESSING SEMICONDUCTOR DEVICE USING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18975419 | RECOMBINATION CHANNELS FOR ANGLE CONTROL OF NEUTRAL REACTIVE SPECIES | Non-Final OA | Applied Materials, Inc. |
| 18206852 | ICP SOURCE GAS DELIVERY HUB AND NOZZLE | Non-Final OA | Applied Materials, Inc. |
| 17961553 | HALOGEN-RESISTANT THERMAL BARRIER COATING FOR PROCESSING CHAMBERS | Non-Final OA | Applied Materials, Inc. |
| 18581954 | SUBSTRATE PROCESSING APPARATUS | Non-Final OA | Tokyo Electron Limited |
| 18524015 | SUBSTRATE PROCESSING APPARATUS, PLASMA MEASUREMENT METHOD, AND PLASMA REGULATION METHOD | Non-Final OA | Tokyo Electron Limited |
| 18380776 | SYSTEMS AND METHODS FOR IMPROVING PLANARITY USING SELECTIVE ATOMIC LAYER ETCHING (ALE) | Non-Final OA | Tokyo Electron Limited |
| 18237409 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18231278 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18359783 | APPARATUS AND METHOD FOR PLASMA PROCESSING | Non-Final OA | Tokyo Electron Limited |
| 17747861 | PLASMA PROCESSING APPARATUS | Non-Final OA | TOKYO ELECTRON LIMITED |
| 18447533 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM | Final Rejection | Kokusai Electric Corporation |
| 18097232 | ANTENNA MEMBER AND APPARATUS AND METHOD FOR TREATING SUBSTRATE | Final Rejection | SEMES CO., LTD. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy