Prosecution Insights
Last updated: July 05, 2026
Application No. 18/410,303

SEMICONDUCTOR STRUCTURE HAVING NON-SILICIDE SOURCE/DRAIN CONTACT AND METHOD FOR MANUFACTURING THE SAME

Non-Final OA
Filed
Jan 11, 2024
Examiner
TYNES JR., LAWRENCE C
Art Unit
2899
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company, Ltd.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
662 granted / 777 resolved
+17.2% vs TC avg
Moderate +9% lift
Without
With
+9.0%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
28 currently pending
Career history
811
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
66.0%
+26.0% vs TC avg
§102
7.7%
-32.3% vs TC avg
§112
22.7%
-17.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 777 resolved cases

Prosecution Timeline

Jan 11, 2024
Application Filed
Apr 01, 2026
Non-Final Rejection mailed (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12672559
LOW INSERTION LOSS COAXIAL THROUGH-HOLE FOR HIGHSPEED INPUT-OUPUT
4y 0m to grant Granted Jun 30, 2026
Patent 12672572
PACKAGE COMPRISING A SUBSTRATE WITH INTERCONNECTS
3y 9m to grant Granted Jun 30, 2026
Patent 12672507
HEATING APPARATUS AND PRETREMENT METHOD FOR WAFER
2y 7m to grant Granted Jun 30, 2026
Patent 12666652
LOCAL BACKSIDE CONTACT ISOLATION FOR MERGED BACKSIDE CONTACT PATTERNING
2y 6m to grant Granted Jun 23, 2026
Patent 12660272
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
3y 5m to grant Granted Jun 16, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
94%
With Interview (+9.0%)
2y 4m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 777 resolved cases by this examiner. Grant probability derived from career allowance rate.

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